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    Scatterometry based methods and systems for measurement of strain in semiconductor structures
    2.
    发明授权
    Scatterometry based methods and systems for measurement of strain in semiconductor structures 有权

    公开(公告)号：US11573077B2

    公开(公告)日：2023-02-07

    申请号：US17338449

    申请日：2021-06-03

    Applicant: KLA Corporation

    Inventor： Houssam Chouaib ,  Aaron Rosenberg ,  Kai-Hsiang Lin ,  Dawei Hu ,  Zhengquan Tan

    IPC: G01B11/06 ,  H01L21/66 ,  G01N21/956 ,  H01L29/10 ,  G03F7/20 ,  G01B11/16 ,  G01L1/24

    Abstract: Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

    Measurements Of Semiconductor Structures Based On Spectral Differences At Different Process Steps
    4.
    发明公开
    Measurements Of Semiconductor Structures Based On Spectral Differences At Different Process Steps 审中-公开

    公开(公告)号：US20240186191A1

    公开(公告)日：2024-06-06

    申请号：US18210571

    申请日：2023-06-15

    Applicant: KLA Corporation

    Inventor： Ming Di ,  Qiang Zhao ,  Tianhao Zhang ,  Dawei Hu ,  Yih Chang ,  Xi Chen

    IPC: H01L21/66 ,  G01J3/02 ,  G01J3/28

    CPC classification number: H01L22/12 ,  G01J3/0229 ,  G01J3/2823

    Abstract: Methods and systems for measuring values of one or more parameters of interest, including changes in values of one or more parameters of interest, based on measured spectral differences are presented herein. A trained spectral difference based measurement model determines changes in the values of one or more parameters of interest based on a measure of differences in spectra measured before and after one or more process steps. In some examples, a measure of spectral difference is determined based on a difference in measured intensity, a difference in harmonic signal values, or a difference in value of one or more Mueller Matrix elements. A measure of spectral difference may be expressed as a set of difference values, a scalar value, or coefficients of a functional fit to difference values. A measure of spectral difference may be determined based on a weighting of spectral differences according to wavelength.

    Scatterometry Based Methods And Systems For Measurement Of Strain In Semiconductor Structures
    6.
    发明申请
    Scatterometry Based Methods And Systems For Measurement Of Strain In Semiconductor Structures 有权

    公开(公告)号：US20210293532A1

    公开(公告)日：2021-09-23

    申请号：US17338449

    申请日：2021-06-03

    Applicant: KLA Corporation

    Inventor： Houssam Chouaib ,  Aaron Rosenberg ,  Kai-Hsiang Lin ,  Dawei Hu ,  Zhengquan Tan

    IPC: G01B11/16 ,  H01L21/66 ,  G03F7/20 ,  G01L1/24

    Abstract: Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

    Multi-Dimensional Model Of Optical Dispersion
    7.
    发明申请
    Multi-Dimensional Model Of Optical Dispersion 审中-公开

    公开(公告)号：US20200292467A1

    公开(公告)日：2020-09-17

    申请号：US16815362

    申请日：2020-03-11

    Applicant: KLA Corporation

    Inventor： Natalia Malkova ,  Mikhail Sushchik ,  Dawei Hu ,  Carlos L. Ygartua

    IPC: G01N21/95 ,  G01N21/956 ,  G01B11/06 ,  G06T7/00

    Abstract: Methods and systems for estimating values of parameters of interest from optical measurements of a sample early in a production flow based on a multidimensional optical dispersion (MDOD) model are presented herein. An MDOD model describes optical dispersion of materials comprising a structure under measurement in terms of parameters external to a base optical dispersion model. In some examples, a power law model describes the physical relationship between the external parameters and a parameter of the base optical dispersion model. In some embodiments, one or more external parameters are treated as unknown values that are resolved based on spectral measurement data. In some embodiments, one or more external parameters are treated as known values, and values of base optical dispersion model parameters, one or more external parameters having unknown values, or both, are resolved based on spectral measurement data and the known values of the one or more external parameters.

    Dispersion model for band gap tracking
    8.
    发明授权
    Dispersion model for band gap tracking 有权

    公开(公告)号：US10770362B1

    公开(公告)日：2020-09-08

    申请号：US16529495

    申请日：2019-08-01

    Applicant: KLA Corporation

    Inventor： Natalia Malkova ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Dawei Hu

    IPC: H01L21/66 ,  G01R31/28 ,  G01N21/27 ,  G01R31/308

    Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

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