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公开(公告)号：US20240113507A1
公开(公告)日：2024-04-04
申请号：US18479706
申请日：2023-10-02
发明人： Rei HASHIMOTO , Shinji SAITO , Tsutomu KAKUNO , Kei KANEKO
摘要： According to one embodiment, a surface emitting quantum cascade laser includes: a first surface that emits laser light; a second surface opposite to the first surface; an active layer provided between the first surface and the second surface; a photonic crystal provided between the active layer and the first surface or between the active layer and the second surface, the photonic crystal having a predetermined periodicity; a first electrode located on the first surface outside a region where the laser light is emitted; a second electrode provided on the second surface, the photonic crystal being located between the first surface and the second electrode; and a third electrode provided on the second surface and separated from the second electrode, the active layer extending between the first surface and the second electrode and between the first surface and the third electrode.
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公开(公告)号：US20210091540A1
公开(公告)日：2021-03-25
申请号：US16898535
申请日：2020-06-11
发明人： Shinji SAITO , Kei KANEKO , Rei HASHIMOTO , Tsutomu KAKUNO
摘要： A quantum cascade laser includes light-emitting quantum well layers configured to emit infrared laser light by an intersubband transition; and injection quantum well layers configured to relax carrier energy. The light-emitting quantum well layers and the injection quantum well layers are stacked alternately. The injection quantum well layers relax the energy of carriers injected from the light-emitting quantum well layers, respectively. The light-emitting quantum well layers and the injection quantum well layers including barrier layers. At least one barrier layer includes first and second regions of a first ternary compound semiconductor, and a binary compound semiconductor thin film. The binary compound semiconductor thin film is provided between the first and second regions. The first ternary compound semiconductor includes Group III atoms and a Group V atom. The binary compound semiconductor thin film includes one Group III atom of the first ternary compound semiconductor and the Group V atom.
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公开(公告)号：US20220271508A1
公开(公告)日：2022-08-25
申请号：US17464765
申请日：2021-09-02
发明人： Rei HASHIMOTO , Tsutomu KAKUNO , Kei KANEKO , Shinji SAITO
摘要： A surface light-emission type semiconductor light-emitting device includes a first semiconductor layer; a light-emitting layer provided on the first semiconductor layer; a second semiconductor layer provided on the light-emitting layer; an uneven structure provided on the second semiconductor layer, the uneven structure including a protrusion and a recess next to the protrusion; a first metal layer covering the uneven structure; and a second metal layer provided between the uneven structure and the first metal layer. The second metal layer is provided on one of a bottom surface of the recess, an upper surface of the protrusion, or a side surface of the protrusion. The second metal layer has a reflectance for light radiated from the light-emitting layer, which is less than a reflectance of the first metal layer for the light.
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公开(公告)号：US20210399526A1
公开(公告)日：2021-12-23
申请号：US17302237
申请日：2021-04-28
发明人： Rei HASHIMOTO , Tsutomu KAKUNO , Kei KANEKO , Shinji SAITO
摘要： According to one embodiment, a surface-emitting quantum cascade laser includes a substrate; a mesa portion of a semiconductor stacked body located on the substrate, and a reflective film located at a sidewall of the mesa portion. The mesa portion includes a light-emitting layer emitting light due to an intersubband transition of a carrier, and a photonic crystal layer including a two-dimensional diffraction grating.
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公开(公告)号：US20200006922A1
公开(公告)日：2020-01-02
申请号：US16537965
申请日：2019-08-12
发明人： Shinji SAITO , Tsutomu KAKUNO , Rei HASHIMOTO , Kei KANEKO , Yasunobu KAI
IPC分类号： H01S5/34 , H01S5/028 , H01S5/042 , H01S5/10 , H01S5/12 , H01S5/187 , H01S5/183 , H01S5/30 , H01S5/343
摘要： A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating.
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公开(公告)号：US20240264076A1
公开(公告)日：2024-08-08
申请号：US18539113
申请日：2023-12-13
发明人： Shinji SAITO , Masatoshi HIRONO , Kei KANEKO , Tsutomu KAKUNO , Rei HASHIMOTO
IPC分类号： G01N21/3504 , G02B1/00 , G02B17/00 , H01S5/00 , H01S5/34
CPC分类号： G01N21/3504 , G02B1/005 , G02B17/002 , H01S5/005 , H01S5/3402 , G02B5/045
摘要： According to one embodiment, a sensing system includes a reflective optical element, and an optical device. The reflective optical element includes a plurality of optical structures arranged along a first plane. The optical device includes an element face. The optical device is configured to perform a first operation and a second operation. The optical device is configured to emit infrared rays from the element face in the first operation. The optical device is configured to detect the infrared rays reflected by the reflective optical element and incident on the element face in the second operation.
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公开(公告)号：US20240146032A1
公开(公告)日：2024-05-02
申请号：US17976590
申请日：2022-10-28
发明人： Shinji SAITO , Rei HASHIMOTO , Kei KANEKO , Tsutomu KAKUNO
IPC分类号： H01S5/34 , H01L31/0352 , H01S5/042 , H01S5/11
CPC分类号： H01S5/3401 , H01L31/035236 , H01S5/04253 , H01S5/04256 , H01S5/11
摘要： A quantum cascade element includes a first substrate, a quantum cascade layer and a second substrate. The quantum cascade layer is provided at a front surface side of the first substrate. The quantum cascade layer includes a plurality of quantum well layers and a plurality of barrier layers alternately stacked in a direction perpendicular to the front surface of the first substrate. The second substrate is bonded to the first substrate with the quantum cascade layer interposed. The second substrate includes a photonic crystal contacting the quantum cascade layer. The photonic crystal includes a plurality of recesses at a side contacting the quantum cascade layer. The plurality of recesses faces an uppermost layer of the plurality of barrier layers.
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公开(公告)号：US20220057319A1
公开(公告)日：2022-02-24
申请号：US17245703
申请日：2021-04-30
发明人： Shinji SAITO , Tsutomu KAKUNO , Rei HASHIMOTO , Kei KANEKO
摘要： According to one embodiment, a gas analysis device includes: a base including a concave portion; a window includes a first film and a second film; an optical part that is located at a side of the window opposite to the base side and includes a light projector and a light receiver; and an optical path length controller that is located between the base and the window and has a controllable thickness. The concave portion includes a first sidewall that is oblique to a surface of the base, and a second sidewall that is oblique to the surface of the base. An oblique direction of the second sidewall is opposite to an oblique direction of the first sidewall. The light projector is configured to irradiate light toward the first sidewall. The light receiver is configured to convert light reflected by the second sidewall.
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公开(公告)号：US20190148915A1
公开(公告)日：2019-05-16
申请号：US16189148
申请日：2018-11-13
发明人： Shinji SAITO , Tomohiro TAKASE , Rei HASHIMOTO , Tsutomu KAKUNO
CPC分类号： H01S5/3402 , H01S5/02469 , H01S5/02476 , H01S5/0425 , H01S5/1014 , H01S5/1021 , H01S5/105 , H01S5/1203 , H01S5/18 , H01S5/18386 , H01S5/3401 , H01S5/3407
摘要： A surface-emitting quantum cascade laser of an embodiment includes a semiconductor stacked body, an upper electrode, and a lower electrode. The semiconductor stacked body includes an active layer that includes a quantum well layer and emits infrared laser light, a first semiconductor layer that includes a photonic crystal layer in which pit parts constitute a rectangular grating, and a second semiconductor layer. The upper electrode is provided on the first semiconductor layer. The lower electrode is provided on a lower surface of a region of the second semiconductor layer overlapping at least the upper electrode. The photonic crystal layer is provided on the upper surface side of the first semiconductor layer. In plan view, the semiconductor stacked body includes a surface-emitting region including the photonic crystal layer and a current injection region. The upper electrode is provided on the current injection region.
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公开(公告)号：US20170227455A1
公开(公告)日：2017-08-10
申请号：US15125901
申请日：2015-09-24
发明人： Tsutomu KAKUNO , Shigeyuki TAKAGI , Yasutomo SHIOMI , Akira MAEKAWA , Miyuki KUSABA , Hiroshi HASEGAWA , Takashi MAGARA , Isao MURAOKA
IPC分类号： G01N21/3504 , G01N33/497
CPC分类号： G01N21/3504 , A61B5/0059 , A61B5/082 , A61B5/0833 , A61B5/0836 , A61B5/087 , G01N33/497 , G01N2033/4975 , G01N2201/0612 , G01N2201/12 , H01S5/22 , H01S5/3402
摘要： A breath analyzer includes a light source, a gas cell, a detection unit and a data processing unit. The light source emits infrared light of a wavelength band including an absorption line for acetone. A breath containing sample gas is introduced to the gas cell. The infrared light is incident on the gas cell. The detection unit receives transmitted light emerging from the gas cell, and outputs a sample signal value corresponding to an acetone discharge amount. The data processing unit determines an approximation formula of dependence of fat oxidation rate on acetone discharge amount in advance, and calculates a fat oxidation rate for individual sample signal values using the approximation formula. When the acetone discharge amount (microliter/min) is x, the fat oxidation rate (milligram/min) y is approximated by a following formula: y=Ax+B (where A and B are constants).
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