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公开(公告)号：US07440157B2
公开(公告)日：2008-10-21
申请号：US11713773
申请日：2007-03-02
CPC分类号： G02F1/135 , G02B27/1026 , G02B27/1033 , G02B27/141 , G02B27/145 , G02B27/149 , G02F1/0126 , G02F1/133553 , G02F1/1354 , H04N9/3105 , H04N9/312 , H04N9/3167 , Y10T428/31504
摘要： An optical device has an electrically insulating first barrier layer disposed over a first electrode layer, a photoconductive layer disposed over the first barrier layer, and a carrier confining layer disposed over the photoconducting layer. The carrier confining layer defines a volume throughout which a plurality of carrier traps are dispersed. Further, an electrically insulating second barrier layer is disposed over the carrier confining layer, a light blocking layer is disposed over the second barrier layer for blocking light of a selected wavelength band. A reflective layer is disposed over the light blocking layer for reflecting light within the selected wavelength band, a birefringent or dispersive layer is disposed over the reflective layer, and an optically transmissive second electrode layer is disposed over the birefringent or dispersive layer. A method is also disclosed, as are additional layers intervening between those detailed above.
摘要翻译： 光学器件具有设置在第一电极层上的电绝缘的第一阻挡层，设置在第一阻挡层上的光电导层和设置在光导层上的载流子限制层。 载体限制层限定了多个载体陷阱分散在其中的体积。 此外，电绝缘的第二阻挡层设置在载体限制层的上方，遮光层设置在第二阻挡层上，用于阻挡所选波长带的光。 反射层设置在遮光层上，用于反射所选波长带内的光，双折射或色散层设置在反射层上，并且透光的第二电极层设置在双折射或色散层上。 还公开了一种方法，以及介于上述细节之间的附加层也是如此。
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公开(公告)号：US20120085021A1
公开(公告)日：2012-04-12
申请号：US13311674
申请日：2011-12-06
IPC分类号： C10L5/40
摘要： A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets are brought into contact with an alloy of the passivation preventing agent having a melting point temperature below that of the solid-like mixture to initiate the hydrogen-producing reaction at a lower temperature.
摘要翻译： 用于将水分解成氢气和氧化物组分的燃料包括由能够在水中氧化形成氢气的固态源材料的固体状混合物形成的基本上固体的颗粒和氧化物组分的钝化表面层， 钝化防止剂，其在有效量下对水基本上是惰性的，以防止在氧化过程中固态材料的钝化。 使颗粒与熔点温度低于固体混合物的钝化防止剂的合金接触，以在较低温度下引发产氢反应。
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公开(公告)号：US07938879B2
公开(公告)日：2011-05-10
申请号：US11747706
申请日：2007-05-11
申请人： Jerry M. Woodall , Eric S. Harmon , Kurt C. Koehler , Jeffrey T. Ziebarth , Charles R. Allen , Yuan Zheng , Jong-Hyeok Jeon , George H. Goble , David B. Salzman
发明人： Jerry M. Woodall , Eric S. Harmon , Kurt C. Koehler , Jeffrey T. Ziebarth , Charles R. Allen , Yuan Zheng , Jong-Hyeok Jeon , George H. Goble , David B. Salzman
IPC分类号： C22B11/10
CPC分类号： C01B3/08 , C22C21/00 , C22C28/00 , Y02E60/36 , Y02P20/133
摘要： A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets may be introduced into water or other suitable oxidizer in a controlled rate to control the rate of reaction of the source material with the oxidizer, and thereby control the rate of formation of hydrogen. Methods are described for producing the solid-like mixture in varying weight percent of source material to passivation preventing agent.
摘要翻译： 用于将水分解成氢气和氧化物组分的燃料包括由能够在水中氧化形成氢气的固态源材料的固体状混合物形成的基本上固体的颗粒和氧化物组分的钝化表面层， 钝化防止剂，其在有效量下对水基本上是惰性的，以防止在氧化过程中固态材料的钝化。 颗粒可以以受控的速率引入水或其它合适的氧化剂中以控制源材料与氧化剂的反应速率，从而控制氢的形成速率。 描述了用于以不同重量百分比的源材料生成固体状混合物以防止钝化剂的方法。
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4.发明授权
公开(公告)号：US5508829A
公开(公告)日：1996-04-16
申请号：US264177
申请日：1994-06-22
申请人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
发明人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
IPC分类号： G02F1/355 , G02F1/015 , G02F1/35 , H01L31/0232
CPC分类号： G02F1/3551 , G02F2202/101 , G03H2001/0264
摘要： A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As. In an optical storage medium embodiment of the invention the spatial variation in the intensity of the light beam results from a simultaneous application of a first light beam (LB1) and a second light beam (LB2) to the body, and from interference fringes resulting from an intersection of said first and second light beams.
摘要翻译： 光响应装置（10）具有主体（12），其包括由III-V族材料构成的基体，所述基体具有由其中所含的V族材料构成的夹杂物（14）。 身体响应于存在具有空间变化的强度的光束，以便以对应的空间变化的方式修改被俘获的光激发电荷载体在体内的分布。 捕获的电荷载体的分布在III-V族材料的至少一种光学性质中引起相应的空间变化，例如III-V族材料的折射率和/或III-V族的吸收系数 材料。 III-V族材料由LTG GaAs：As或LTG AlGaAs：As组成。 在本发明的光学存储介质的实施例中，光束的强度的空间变化是由于将第一光束（LB1）和第二光束（LB2）同时施加到主体，并且由干涉条纹 所述第一和第二光束的交叉。
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5.发明授权
公开(公告)号：US5132746A
公开(公告)日：1992-07-21
申请号：US637397
申请日：1991-01-04
IPC分类号： H01L29/205 , H01L29/12 , H01L29/737 , H01L29/76 , H01L29/88 , H01L31/10
CPC分类号： B82Y10/00 , H01L29/122 , H01L29/7376 , H01L29/7606
摘要： Resonant tunneling devices having improved peak-to-valley current ratios are disclosed. The resonant tunneling device comprises a quantum well layer surrounded by first and second barrier layers, the first and second barrier layers being comprised of an indirect first III-V compound semiconductor. The first barrier layer being formed on a substrate of a second III-V compound semiconductor having a lattice constant larger than the lattice constant of the first barrier layer thereby inducing a biaxial stress in the first barrier layer. The biaxial stress results in an energy shift at resonance that increases the peak to valley current ratio of the device.
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6.发明授权
公开(公告)号：US4920069A
公开(公告)日：1990-04-24
申请号：US183489
申请日：1988-04-15
IPC分类号： H01L21/20 , H01L21/263
CPC分类号： H01L21/2633 , H01L21/02395 , H01L21/02543 , H01L21/02546 , H01L21/02639 , Y10S148/017 , Y10S148/05 , Y10S148/065 , Y10S148/135 , Y10S148/169
摘要： Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.
摘要翻译： 亚微米结构的制造是通过抑制更多的挥发性元素来提供化合物晶体的蒸汽化学腐蚀来实现的，从而使挥发性较低的元件具有抗附聚和侵蚀速率限制能力，随后可以在相同的环境中随后再生长。 侵蚀对晶体取向敏感。
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公开(公告)号：US4807006A
公开(公告)日：1989-02-21
申请号：US64186
申请日：1987-06-19
IPC分类号： H01L31/09 , G01J1/02 , H01L31/00 , H01L31/0304 , H01L31/108 , H01L31/109 , H01L27/14
CPC分类号： H01L31/03046 , H01L31/1085 , H01L31/109 , Y02E10/544 , Y02P70/521
摘要： A semiconductor photodetector is formed of interdigitated, metal-semiconductor-metal electrodes disposed on a surface of semi-insulating semiconductor material, gallium arsenide. Radiation such as infra-red or visible light is converted to an electric current flowing between the electrodes upon application of a bias voltage between the electrodes. A Schottky barrier at the junction of each electrode surface and the semiconductor surface limits current flow to that produced by photons. Tunneling of charge carriers of the current under the Schottky barrier, which tunneling results from the entrapment of charge carriers on the semiconductor surface, is inhibited by the production of a heterojunction surface layer upon the foregoing surface between the electrodes to repulse the charge carriers and prevent their entrapment at the surface. The heterojunction layer may be doped to enhance the repulsion of charge carriers. The heterojunction surface layer is of sufficient thickness to prevent tunneling of photogenerated carriers to a noncontacted region of the surface of the heterojunction layer and to also permit efficient repulsion of charge carriers from the surface. Longer wavelength photodetectors may also be formed in this way by providing misfit dislocation regions between the interaction region, which may be GaInAs, and a GaAs substrate, thereby providing a pseudo-morphic interaction region which is graded back to a heterojunction layer at the surface.
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公开(公告)号：US4757369A
公开(公告)日：1988-07-12
申请号：US60700
申请日：1987-06-10
IPC分类号： H01L21/338 , H01L21/28 , H01L21/285 , H01L29/41 , H01L29/43 , H01L29/45 , H01L29/80 , H01L29/812 , H01L29/167 , H01L23/48 , H01L29/161 , H01L29/62
CPC分类号： H01L21/28581 , H01L21/28575 , H01L29/452
摘要： A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.
摘要翻译： 在III-V族金属间半导体晶体表面上的两性掺杂剂层将在形成稳定接触的加热循环中扩散到晶体表面。 接触可以是欧姆的或整流的，这取决于过量的一种晶体成分的局部存在。 在加热时GaAs上的Si层形成整流接触。 当Si层含有As时，接触是欧姆的。
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公开(公告)号：US4504846A
公开(公告)日：1985-03-12
申请号：US454747
申请日：1982-12-30
IPC分类号： H01L31/10 , H01L27/146 , H01L31/101 , H03K19/14 , H01L29/88 , H01L27/12 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14643 , H01L31/101 , H03K19/14 , A61M2025/1059
摘要： Optical-to-electrical logic operations may be performed employing as each logic variable a different light wavelength and providing an optical-to-electrical semiconductor converter such that each particular wavelength responsive optical energy receiving region is an updoped region bounded by a thin tunneling junction having a thickness of the order of the mean free path of a carrier in the tunneling region.
摘要翻译： 可以执行光电电逻辑操作，使用每个逻辑变量不同的光波长，并提供光 - 电半导体转换器，使得每个特定的波长响应光能接收区域是由薄隧穿结界限定的上游区域， 在隧道区域中载体平均自由程的顺序的厚度。
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公开(公告)号：US4477721A
公开(公告)日：1984-10-16
申请号：US341955
申请日：1982-01-22
IPC分类号： H01L31/12 , H01L31/173 , H01J40/14
CPC分类号： H01L31/173
摘要： A highly efficient monolithic direct bandgap lattice accommodated semiconductor structure in which an input signal is converted to photons on one side of an insulating region and the photons are reconverted on the opposite side of the insulating region to an output signal in a multi-oblique segment region. The structure converts AC to DC, AC to AC and DC to DC signals and is adapted to the efficient V-groove multijunction solar cell.
摘要翻译： 一种高效率的单片直接带隙晶格容纳半导体结构，其中输入信号被转换成绝缘区域一侧的光子，并且光子在绝缘区域的相反侧再转换成多斜段区域中的输出信号 。 该结构将AC转换为DC，AC至AC和DC至DC信号，并适用于高效的V形槽多结太阳能电池。
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