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    Reflective mask blank, reflective mask and method of manufacturing semiconductor device
    1.
    发明授权
    Reflective mask blank, reflective mask and method of manufacturing semiconductor device 有权

    公开(公告)号：US11880130B2

    公开(公告)日：2024-01-23

    申请号：US17946709

    申请日：2022-09-16

    Applicant: HOYA CORPORATION

    Inventor： Yohei Ikebe ,  Tsutomu Shoki ,  Takahiro Onoue ,  Hirofumi Kozakai

    IPC: G03F1/24 ,  G03F1/26

    CPC classification number: G03F1/24 ,  G03F1/26

    Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k

    Reflective mask blank, reflective mask and method of manufacturing semiconductor device
    5.
    发明授权
    Reflective mask blank, reflective mask and method of manufacturing semiconductor device 有权

    公开(公告)号：US11480867B2

    公开(公告)日：2022-10-25

    申请号：US17227655

    申请日：2021-04-12

    Applicant: HOYA CORPORATION

    Inventor： Yohei Ikebe ,  Tsutomu Shoki ,  Takahiro Onoue ,  Hirofumi Kozakai

    IPC: G03F1/24 ,  G03F1/26

    Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k

    Substrate with a multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method
    7.
    发明授权
    Substrate with a multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method 有权

    公开(公告)号：US11256167B2

    公开(公告)日：2022-02-22

    申请号：US16829906

    申请日：2020-03-25

    Applicant: HOYA CORPORATION

    Inventor： Masanori Nakagawa ,  Hirofumi Kozakai

    IPC: G03F1/24

    Abstract: The substrate with a multilayer reflective film includes a substrate and the multilayer reflective film configured to reflect exposure light, the multilayer reflective film comprising a stack of alternating layers on a substrate, the alternating layers including a low refractive index layer and a high refractive index layer, in which the multilayer reflective film contains molybdenum (Mo) and at least one additive element selected from nitrogen (N), boron (B), carbon (C), zirconium (Zr), oxygen (O), hydrogen (H) and deuterium (D), and the crystallite size of the multilayer reflective film calculated from a diffraction peak of Mo (110) by X-ray diffraction is 2.5 nm or less.

    Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device
    8.
    发明授权
    Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device 有权
    利用多层反射膜制造衬底的方法，制造反射掩模板的方法，具有多层反射膜的衬底，反射掩模板，反射掩模和制造半导体器件的方法

    公开(公告)号：US09507254B2

    公开(公告)日：2016-11-29

    申请号：US14423494

    申请日：2013-09-24

    Applicant: HOYA CORPORATION

    Inventor： Toshihiko Orihara ,  Kazuhiro Hamamoto ,  Hirofumi Kozakai ,  Tsutomu Shoki ,  Junichi Horikawa

    IPC: G03F1/22 ,  G03F1/50 ,  G03F1/76 ,  G03F1/24 ,  G03F1/68 ,  G03F1/52 ,  G03F7/20 ,  H01L21/027

    CPC classification number: G03F1/76 ,  G03F1/24 ,  G03F1/52 ,  G03F1/68 ,  G03F7/20 ,  H01L21/0274

    Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film that enables the number of detected pseudo defects, to be reduced even when using highly sensitive defect inspection apparatuses using light of various wavelengths, and in particular, is capable of achieving a level of smoothness required of substrates with a multilayer reflective film while reliably detecting critical defects as a result of reducing the number of detected pseudo defects, as well as a method of manufacturing the same.The present invention relates to a method of manufacturing a substrate with a multilayer reflective film having a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, on the main surface of a mask blank substrate on the side of which a transfer pattern is formed, comprising a step of: depositing the multilayer reflective film on the main surface by ion beam sputtering using targets composed of a high refractive index material and a low refractive index material; wherein, during the ion beam sputtering, sputtered particles of the high refractive index material and the low refractive index material are made to enter at prescribed incident angle relative to the normal of the main surface so that the power spectral density in a prescribed spatial frequency region is a prescribed value.

    Abstract translation: 本发明涉及一种具有多层反射膜的基板的制造方法，所述多层反射膜具有通过交替层叠高折射率层和低折射率层而获得的多层反射膜，所述多层反射膜在所述侧面上的掩模基板的主表面上 其中形成转印图案的步骤包括以下步骤：通过使用由高折射率材料和低折射率材料构成的靶使用离子束溅射将多层反射膜沉积在主表面上; 其中，在离子束溅射期间，使高折射率材料和低折射率材料的溅射颗粒相对于主表面的法线以规定的入射角进入，使得在规定的空间频率区域中的功率谱密度 是规定值。

    MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK BLANK, TRANSMISSIVE MASK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD
    10.
    发明申请
    MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK BLANK, TRANSMISSIVE MASK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD 有权
    掩模基板，多层反射膜基板，传输掩模空白，反射掩模，传输掩模，反射掩模和半导体器件制造方法

    公开(公告)号：US20140329174A1

    公开(公告)日：2014-11-06

    申请号：US14348349

    申请日：2013-03-28

    Applicant: HOYA CORPORATION

    Inventor： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

    IPC: G03F1/50

    CPC classification number: G03F1/22 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2004 ,  H01L21/0332 ,  H01L21/0334

    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

    Abstract translation: 公开了一种用于光刻的掩模空白基板，其中基板的主表面满足关系式（BA70-BA30）/（BD70-BD30）≥350（％/ nm），并具有最大高度（Rmax） ＆nlE; 1.2nm的轴承面积（％）和轴承深度（nm）之间的关系，通过使用原子力显微镜测量在基板侧的主表面中的1μm的面积， 形成转印图案，其中BA30被定义为30％的轴承面积，BA70被定义为70％的轴承面积，并且BD70和BD30被定义为分别表示30％的轴承面积的轴承深度和轴承 面积达70％。

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