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公开(公告)号：US20210320236A1
公开(公告)日：2021-10-14
申请号：US17228310
申请日：2021-04-12
Inventor： Jiho JOO , Yong Sung EOM , GWANG-MUN CHOI , KWANG-SEONG CHOI , CHANMI LEE , Ki Seok JANG
Abstract: Provided is a method for transferring and bonding devices. The method includes applying an adhesive layer to a carrier, arranging a plurality of devices, attaching the arranged devices to the carrier, applying a polymer film to a substrate, aligning the carrier to which the plurality of devices are attached with the substrate, bonding the plurality of devices to the substrate by radiating laser, and releasing the carrier from the substrate to which the plurality of devices are bonded.
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公开(公告)号：US20150146755A1
公开(公告)日：2015-05-28
申请号：US14279839
申请日：2014-05-16
Inventor： In Gyoo KIM , Sang Hoon KIM , Jaegyu PARK , Gyungock KIM , Ki Seok JANG
CPC classification number: H01S5/1021 , G02B6/12 , G02B6/122 , G02B6/1228 , G02B6/136 , G02B2006/12061 , G02B2006/12147 , H01S5/021 , H01S5/026 , H01S5/2086 , H01S5/2272 , H01S5/3223 , H01S2301/176 , H01S2304/00
Abstract: Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.
Abstract translation: 提供一种制造半导体激光器的方法。 该方法包括：提供包括第一区域和第二区域的半导体衬底; 通过使用选择性外延生长工艺在半导体衬底的第二区域中形成硅单晶层; 通过使用硅单晶层形成光耦合器; 以及通过选择性外延生长工艺在半导体衬底的第一区域中形成包括锗单晶层的激光芯结构。
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公开(公告)号：US20200266078A1
公开(公告)日：2020-08-20
申请号：US16795009
申请日：2020-02-19
Inventor： Yong Sung EOM , KWANG-SEONG CHOI , Ki Seok JANG , Seok-Hwan MOON , Jiho JOO
Abstract: Provided is a method for manufacturing a semiconductor package, the method including providing a semiconductor chip on a substrate, providing a bonding member between the substrate and the semiconductor chip, and bonding the semiconductor chip on the substrate by irradiating of a laser on the substrate. Here, the bonding member may include a thermosetting resin, a curing agent, and a laser absorbing agent.
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公开(公告)号：US20170261705A1
公开(公告)日：2017-09-14
申请号：US15607717
申请日：2017-05-30
Inventor： Gyungock KIM , Hyundai PARK , In Gyoo KIM , Sang Hoon KIM , Ki Seok JANG , Sang Gi KIM , Jiho JOO , Yongseok CHOI , Hyuk Je KWON , Jaegyu PARK , Sun Ae KIM , Jin Hyuk OH , Myung Joon KWACK
IPC: G02B6/42 , H01L27/15 , H01L31/167 , H01L21/762 , G02B6/13 , G02B6/12
CPC classification number: G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US20160259126A1
公开(公告)日：2016-09-08
申请号：US14820406
申请日：2015-08-06
Inventor： Myungjoon KWACK , Gyungock KIM , Jaegyu PARK , Ki Seok JANG , Jiho JOO
CPC classification number: G02B6/423 , G02B6/3644 , G02B6/4239 , G02B6/4249
Abstract: An optical coupling device comprises an optical fiber block including a first block part and a second block part contacting with one side of the first block part, an optical fiber penetrating the optical fiber block and having an end surface exposed at a bottom surface of the optical fiber block, a semiconductor chip disposed below the optical fiber block and having an optical input/output element disposed on a top surface of the semiconductor chip to correspond with the end surface of the optical fiber, and a planarization layer disposed on the top surface of the semiconductor chip and having a recess region. A bottom surface of the first block part has a higher level than that of the second block part. The bottom surface of the second block part contacts with a bottom of the recess region. The optical fiber is optically coupled with the optical input/output element.
Abstract translation: 光耦合装置包括光纤块，该光纤块包括与第一块部分的一侧接触的第一块部分和第二块部分，穿过光纤块的光纤，并且具有暴露在光学器件的底表面处的端面 光纤块，设置在光纤块下方的半导体芯片，并且具有设置在半导体芯片的顶表面上的光输入/输出元件，以对应于光纤的端面;以及平坦化层，设置在光纤的顶表面上 半导体芯片并具有凹部区域。 第一块部分的底表面具有比第二块部分更高的水平。 第二块部的底面与凹部的底部接触。 光纤与光输入/输出元件光学耦合。
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Patent Agency Ranking
公开(公告)号：US20210402525A1
公开(公告)日：2021-12-30
申请号：US17364128
申请日：2021-06-30
Inventor： GWANG-MUN CHOI , Yong Sung EOM , KWANG-SEONG CHOI , Jiho JOO , CHANMI LEE , Ki Seok JANG
Abstract: Provided is a wire for electric bonding, which includes a solder wire and a composition for bonding adjacent to the solder wire, the solder wire is wet when reaches to a melting point as heat is transferred, the composition for bonding includes an epoxy resin, a reducing agent, and a curing agent, the reducing agent removes a metal oxide formed on a surface of the solder wire, and the epoxy resin is cured by chemically reacting with the reducing agent and the curing agent at a curing temperature.
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7.发明申请OPTICAL INPUT/OUTPUT DEVICE, OPTICAL ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME 有权光输入/输出装置，包括其的光学电子系统及其制造方法公开(公告)号：US20140346532A1
公开(公告)日：2014-11-27
申请号：US14062454
申请日：2013-10-24
Inventor： Gyungock KIM , Hyundai PARK , In Gyoo KIM , Sang Hoon KIM , Ki Seok JANG , Sang Gi KIM , Jiho JOO , Yongseok CHOI , Hyuk Je KWON , Jaegyu PARK , Sun Ae KIM , Jin Hyuk OH , Myung Joon KWACK
IPC: H01L31/167 , G02B6/42
CPC classification number: G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
Abstract translation: 公开了一种光输入/输出装置和包括其的光电系统。 该器件包括体硅衬底，整体地集成在体硅衬底的一部分上的至少一个垂直输入光检测元件以及整体集成在体硅衬底的另一部分上的至少一个垂直输出光源元件， 垂直输入光检测元件。 垂直输出光源元件包括通过晶片接合方法与体硅衬底组合的III-V化合物半导体光源有源层。
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公开(公告)号：US20240021570A1
公开(公告)日：2024-01-18
申请号：US18347149
申请日：2023-07-05
Inventor： Jiho JOO , Yong Sung EOM , CHANMI LEE , Ki Seok JANG , GWANG-MUN CHOI , KWANG-SEONG CHOI , Jin Hyuk OH
IPC: H01L23/00
CPC classification number: H01L24/75 , H01L2224/75263 , H01L2224/75343 , H01L2224/75701 , H01L2224/75702 , H01L2224/75753 , H01L2924/401
Abstract: Provided is a bonding apparatus. The bonding apparatus includes a stage configured to accommodate a substrate, a laser light source configured to provide laser light to devices on the substrate, and a bonding plate provided between the laser light source and the stage and configured to provide the devices on the substrate. The bonding plate includes a transparent substrate; a transparent layer below the transparent substrate; an device adhesion layer below the transparent layer and a reflective pattern provided above or below the transparent substrate and the transparent layer.
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公开(公告)号：US20220384674A1
公开(公告)日：2022-12-01
申请号：US17828701
申请日：2022-05-31
Inventor： Jiho JOO , Yong Sung EOM , Kwang-Seong CHOI , Chanmi LEE , Gwang-Mun CHOI , Ki Seok JANG , Seok-Hwan MOON , Ho-Gyeong YUN
Abstract: Provided is a method for manufacturing an electronic device. The method for manufacturing the electronic device includes mapping good elements and defective elements on a substrate, providing a first transparent structure including a first adhesive layer on the substrate, selectively providing first laser light to the defective elements to cure the first adhesive layer on the defective elements and separate the defective elements from the substrate, providing a second transparent structure including a second adhesive layer, which adheres to new elements replaced for the defective elements, on the substrate, and selectively providing second laser light to the new elements to bond the new elements to the substrate.
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公开(公告)号：US20140105235A1
公开(公告)日：2014-04-17
申请号：US13776428
申请日：2013-02-25
Inventor： In Gyoo KIM , Gyungock KIM , Sang Hoon KIM , Ki Seok JANG , JiHo JOO
IPC: H01S5/30
CPC classification number: H01S5/3031 , G02B6/12004 , H01S5/021 , H01S5/026 , H01S5/0425 , H01S5/3223 , Y10S438/933
Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.
Abstract translation: 提供半导体激光器及其制造方法。 该方法包括：提供包括掩埋氧化物层的衬底; 形成图案，其包括通过蚀刻所述掩埋氧化物层而露出所述衬底的开口部分; 在开口部分形成锗单晶层; 并在基片上形成与锗单晶层相邻的光耦合器。
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