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    Nonvolatile memory cell and method of manufacturing the same
    5.
    发明授权
    Nonvolatile memory cell and method of manufacturing the same 有权
    非易失性存储单元及其制造方法

    公开(公告)号：US08716035B2

    公开(公告)日：2014-05-06

    申请号：US14022705

    申请日：2013-09-10

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Sung Min Yoon ,  Chun Won Byun ,  Shin Hyuk Yang ,  Sang Hee Park ,  Soon Won Jung ,  Seung Youl Kang ,  Chi Sun Hwang ,  Byoung Gon Yu

    IPC: H01L51/00

    CPC classification number: H01L29/6684 ,  B82Y10/00 ,  G11C11/22 ,  H01L21/28291 ,  H01L27/1159 ,  H01L29/78391

    Abstract: Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.

    Abstract translation: 提供一种非易失性存储单元及其制造方法。 非易失性存储单元包括存储晶体管和驱动晶体管。 存储晶体管包括设置在基板上的半导体层，缓冲层，有机铁电层和栅极电极。 驱动晶体管包括设置在基板上的半导体层，缓冲层，栅极绝缘层和栅极电极。 存储晶体管和驱动晶体管设置在同一衬底上。 非易失性存储单元在可见光区域是透明的。

    Inverter, NAND gate, and NOR gate
    6.
    发明授权
    Inverter, NAND gate, and NOR gate 失效
    逆变器，NAND门和NOR门

    公开(公告)号：US08710866B2

    公开(公告)日：2014-04-29

    申请号：US14050313

    申请日：2013-10-09

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Sang Hee Park ,  Chi Sun Hwang ,  Sung Min Yoon ,  Him Chan Oh ,  Kee Chan Park ,  Tao Ren ,  Hong Kyun Leem ,  Min Woo Oh ,  Ji Sun Kim ,  Jae Eun Pi ,  Byeong Hoon Kim ,  Byoung Gon Yu

    IPC: H03K19/20

    CPC classification number: H03K3/012 ,  H03K19/094 ,  H03K19/20

    Abstract: Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

    Abstract translation: 公开了一种逆变器，NAND门和NOR门。 逆变器包括：上拉单元，由根据施加到栅极的电压向输出端子输出第一电源电压的第二薄膜晶体管构成; 根据施加到门的输入信号，将由接地电压输出到输出端的第五薄膜晶体管构成的下拉单元; 以及根据输入信号将第二电源电压或接地电压施加到第二薄膜晶体管的栅极的上拉驱动器。

    Single input level shifter
    9.
    发明授权
    Single input level shifter 有权
    单输入电平转换器

    公开(公告)号：US09035688B2

    公开(公告)日：2015-05-19

    申请号：US14010579

    申请日：2013-08-27

    Applicant: Konkuk University Industrial Cooperation Corp. ,  Electronics and Telecommunications Research Institute

    Inventor： Jae-Eun Pi ,  Kee-Chan Park ,  Sangyeon Kim ,  Joondong Kim ,  Yeon Kyung Kim ,  HongKyun Lym ,  Sang-Hee Park ,  Byoung Gon Yu ,  Chi-Sun Hwang ,  Jong Woo Kim ,  OhSang Kwon ,  Min Ki Ryu

    IPC: H03L5/00 ,  H03K17/30 ,  H03K19/0185

    CPC classification number: H03K17/302 ,  H03K19/0185

    Abstract: Provided is a single input level shifter. The single input level shifter includes: an input unit applying a power voltage to a first node in response to an input signal and applying the input signal to a second node in response to a reference signal; a bootstrapping unit applying the power voltage to the second node according to a voltage level of the first node; and an output unit applying the input signal to an output terminal in response to the reference signal and applying the power voltage to the output terminal according to the voltage level of the first node, wherein the bootstrapping unit includes a capacitor between the first and second nodes, and when the input signal is shifted from a first voltage level to a second voltage level, the bootstrapping unit raises the voltage level of the first node to a level higher than the power voltage.

    Abstract translation: 提供单个输入电平移位器。 单输入电平移位器包括：输入单元，响应于输入信号向第一节点施加电源电压，并响应于参考信号将输入信号施加到第二节点; 引导单元，根据第一节点的电压电平向第二节点施加电源电压; 以及输出单元，其响应于所述参考信号将输入信号施加到输出端子，并且根据所述第一节点的电压电平将所述电源电压施加到所述输出端子，其中所述自举单元包括所述第一和第二节点之间的电容器 并且当所述输入信号从第一电压电平偏移到第二电压电平时，所述自举单元将所述第一节点的电压电平升高到高于所述电源电压的电平。

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