Micro-channel device and manufacturing method thereof and micro-fluidic system

    公开(公告)号:US11534755B2

    公开(公告)日:2022-12-27

    申请号:US16755911

    申请日:2019-04-16

    Abstract: The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.

    Thin film transistor, manufacturing method thereof, sensor

    公开(公告)号:US11245008B2

    公开(公告)日:2022-02-08

    申请号:US16642522

    申请日:2019-07-24

    Abstract: The present application provides a TFT, a manufacturing method thereof, and a sensor. The TFT includes a substrate, and a source, a drain and an active layer on the substrate. The active layer includes a microchannel, and the thin film transistor is configured to detect a sample in the microchannel. When a sample to be detected enters the microchannel, the electron distribution in the active layer would be affected, which causes fluctuations in the TFT characteristics. By detecting such fluctuations, detecting the composition and property of the liquid to be detected may be achieved. Moreover, by virtue of the microchannel, the sample may be precisely controlled. The impact of the external environment may be reduced and the detection accuracy can be enhanced. Continuous monitoring instead of one-time detection of the sample may be achieved and the sample detection efficiency may be improved.

    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS

    公开(公告)号:US20210226064A1

    公开(公告)日:2021-07-22

    申请号:US16959179

    申请日:2019-11-19

    Abstract: Provided are a thin film transistor including: a base cushion layer having a recessed portion, base insulating layer, source-drain layer and active layer. The base insulating layer is located on a side of the base cushion layer where the recessed portion is located, and has a first and second partition walls that are spaced apart, and an orthographic projection region of a gap region between the first and second partition walls onto the base cushion layer is located at a region where the recessed portion is located; and both orthographic projection regions of the first and second partition walls onto the base cushion layer partially overlap with the recessed portion region; and both the source-drain layer and the active layer are located on the side of the base insulating layer away from the base cushion layer.

    Biochip and manufacturing method thereof

    公开(公告)号:US12226772B2

    公开(公告)日:2025-02-18

    申请号:US17432580

    申请日:2021-01-22

    Abstract: A biochip and a method for manufacturing the same are provided. The biochip includes: a guide layer; a channel layer on the guide layer, wherein the channel layer has therein a plurality of first channels extending in a first direction; a plurality of second channels extending in a second direction, wherein each of the plurality of second channels is in communication with the plurality of first channels, the plurality of second channels are in a layer where the channel layer is located, or in a layer where the channel layer and the guide layer are located; an encapsulation cover plate on a side of the channel layer distal to the guide layer; and a driving unit configured to drive biomolecules to move.

    Micro-channel structure, sensor, micro-fluidic device, lab-on-chip device, and method of fabricating micro-channel structure

    公开(公告)号:US11219899B2

    公开(公告)日:2022-01-11

    申请号:US16475035

    申请日:2018-08-01

    Abstract: The present application provides a micro-channel structure. The micro-channel structure includes a base substrate; a rail layer on the base substrate and including a first rail and a second rail spaced apart from each other; and a wall layer on a side of the rail layer distal to the base substrate, and including a first wall and a second wall at least partially spaced apart from each other, thereby forming a micro-channel between the first wall and the second wall. The micro-channel has an extension direction along a plane substantially parallel to a main surface of the base substrate, the extension direction being substantially parallel to extension directions of the first rail and the second rail along the plane substantially parallel to the main surface of the base substrate.

    Thin film transistor, sensor, biological detection device and method

    公开(公告)号:US10823697B2

    公开(公告)日:2020-11-03

    申请号:US16238721

    申请日:2019-01-03

    Inventor: Xiaochen Ma

    Abstract: The present disclosure provides a thin film transistor, a sensor, a biological detection device and a method. The thin film transistor includes a substrate, a first gate, a first dielectric layer, a source, a drain, a semiconductor layer, a second dielectric layer, and a second gate. The first gate is on the substrate. The first dielectric layer is on the substrate and the first gate. The source, the drain, and the semiconductor layer are on a side of the first dielectric layer facing away from the first gate. The second dielectric layer is on the first dielectric layer and the semiconductor layer. A material of the second dielectric layer is a solid state electrolyte material. The second gate is on a side of the second dielectric layer facing away from the semiconductor layer.

    Thin film transistor and manufacturing method thereof, and display apparatus

    公开(公告)号:US11257954B2

    公开(公告)日:2022-02-22

    申请号:US16959179

    申请日:2019-11-19

    Abstract: Provided are a thin film transistor including: a base cushion layer having a recessed portion, base insulating layer, source-drain layer and active layer. The base insulating layer is located on a side of the base cushion layer where the recessed portion is located, and has a first and second partition walls that are spaced apart, and an orthographic projection region of a gap region between the first and second partition walls onto the base cushion layer is located at a region where the recessed portion is located; and both orthographic projection regions of the first and second partition walls onto the base cushion layer partially overlap with the recessed portion region; and both the source-drain layer and the active layer are located on the side of the base insulating layer away from the base cushion layer.

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