公开(公告)号：US20240419081A1

公开(公告)日：2024-12-19

申请号：US18738731

申请日：2024-06-10

Applicant: Applied Materials, Inc.

Inventor： Lin ZHOU ,  Gabriela ALVA ,  Zhiyu HUANG ,  Yung-chen LIN ,  Chi-I LANG

IPC: G03F7/38 ,  G03F7/004 ,  G03F7/20

Abstract: Embodiments discloses herein describe methods for treating a substrate. In one example, a method of treating a layer of a film stack includes pre-treating a surface of an underlayer of a film stack formed on a substrate and forming a metal oxide in a photoresist layer of the film stack by heating a methyl-containing material in a processing environment proximate a film stack. The film stack includes the photoresist layer disposed on top of and in contact with an underlayer, and the underlayer disposed on top of a substrate. The metal oxide implanted photoresist later is then etched.

公开(公告)号：US20230095970A1

公开(公告)日：2023-03-30

申请号：US17893000

申请日：2022-08-22

Applicant: Applied Materials, Inc.

Inventor： Zhiyu HUANG ,  Chi-I LANG ,  Yung-chen LIN ,  Ho-yung HWANG ,  Gabriela ALVA ,  Wayne R. FRENCH

IPC: G03F7/00 ,  G03F7/20 ,  C23C16/04 ,  C23C16/40 ,  C23C16/44

Abstract: Embodiments of the present disclosure generally relate to methods for enhancing photoresist (PR) to have improved profile control. A method for treating a PR includes positioning a workpiece within a process region of a processing chamber, where the workpiece contains a patterned PR disposed on an underlayer, and treating the patterned PR by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce a treated patterned PR which is denser and harder than the patterned PR. The SIS process includes one or more infiltration cycles of exposing the patterned PR to a precursor containing silicon or boron, infiltrating the patterned PR with the precursor, purging to remove remnants of the precursor, exposing the patterned PR to an oxidizing agent, infiltrating the patterned PR with the oxidizing agent to produce oxide coating disposed on inner surfaces of the patterned PR, and purging to remove remnants of the oxidizing agent.

公开(公告)号：US20200335338A1

公开(公告)日：2020-10-22

申请号：US16821759

申请日：2020-03-17

Applicant: Applied Materials, Inc.

Inventor： Tzu-Shun YANG ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG ,  Diwakar KADLAYA ,  Meenakshi GUPTA ,  Srinivas GUGGILLA ,  Yung-chen LIN ,  Hidetaka OSHIO ,  Chao LI ,  Gene LEE

IPC: H01L21/033

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a mandrel layer on a substrate, conformally forming a spacer layer on the mandrel layer, wherein the spacer layer is a doped silicon material, and patterning the spacer layer. In another embodiment, a method for forming features on a substrate includes conformally forming a spacer layer on a mandrel layer on a substrate, wherein the spacer layer is a doped silicon material, selectively removing a portion of the spacer layer using a first gas mixture, and selectively removing the mandrel layer using a second gas mixture different from the first gas mixture.

公开(公告)号：US20240142869A1

公开(公告)日：2024-05-02

申请号：US18237628

申请日：2023-08-24

Applicant: Applied Materials, Inc.

Inventor： Yung-chen LIN ,  Zhiyu HUANG ,  Chi-I LANG ,  Ho-yung HWANG

IPC: G03F1/38 ,  G03F1/46 ,  G03F1/80

CPC classification number: G03F1/38 ,  G03F1/46 ,  G03F1/80

Abstract: Embodiments of the present disclosure generally relate to methods for enhancing carbon hardmask to have improved etching selectivity and profile control. In some embodiments, a method of treating a carbon hardmask layer is provided and includes positioning a workpiece within a process region of a processing chamber, where the workpiece has a carbon hardmask layer disposed on or over an underlying layer, and treating the carbon hardmask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an aluminum oxide carbon hybrid hardmask which is denser than the carbon hardmask layer. The SIS process includes exposing and infiltrating the carbon hardmask layer with an aluminum precursor, purging to remove gaseous remnants, exposing and infiltrating the carbon hardmask layer to an oxidizing agent to produce an aluminum oxide coating disposed on inner surfaces of the carbon hardmask layer, and purging the process region to remove gaseous remnants.

公开(公告)号：US20230093450A1

公开(公告)日：2023-03-23

申请号：US18072457

申请日：2022-11-30

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun YANG ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG ,  Diwakar KEDLAYA ,  Meenakshi GUPTA ,  Srinivas GUGGILLA ,  Yung-chen LIN ,  Hidetaka OSHIO ,  Chao LI ,  Gene LEE

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.

公开(公告)号：US20220392752A1

公开(公告)日：2022-12-08

申请号：US17663937

申请日：2022-05-18

Applicant: Applied Materials, Inc.

Inventor： Yung-chen LIN ,  Chi-I LANG ,  Ho-yung HWANG

IPC: H01J37/32 ,  H01L21/3065

Abstract: Embodiments of the present disclosure generally relate to methods for etching materials. In one or more embodiments, the method includes positioning a substrate in a process volume of a process chamber, where the substrate includes a metallic ruthenium layer disposed thereon, and exposing the metallic ruthenium layer to an oxygen plasma to produce a solid ruthenium oxide on the metallic ruthenium layer and a gaseous ruthenium oxide within the process volume. The method also includes exposing the solid ruthenium oxide to a secondary plasma to convert the solid ruthenium oxide to either metallic ruthenium or a ruthenium oxychloride compound. The metallic ruthenium is in a solid state on the metallic ruthenium layer or the ruthenium oxychloride compound is in a gaseous state within the process volume.

公开(公告)号：US20240145245A1

公开(公告)日：2024-05-02

申请号：US18237639

申请日：2023-08-24

Applicant: Applied Materials, Inc.

Inventor： Yung-chen LIN ,  Zhiyu HUANG ,  Chi-I LANG ,  Ho-yung HWANG

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/50 ,  G03F7/26 ,  H01L21/311

CPC classification number: H01L21/0337 ,  C23C16/26 ,  C23C16/50 ,  G03F7/265 ,  H01L21/31144

Abstract: Embodiments of the present disclosure generally relate to methods for enhancing carbon hardmask to have improved etching selectivity and profile control. In some embodiments, a method of treating a carbon hardmask layer is provided and includes positioning a workpiece within a process region of a processing chamber, where the workpiece has a carbon hardmask layer disposed on or over an underlying layer, and treating the carbon hardmask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an aluminum oxide carbon hybrid hardmask which is denser than the carbon hardmask layer. The SIS process includes exposing and infiltrating the carbon hardmask layer with an aluminum precursor, purging to remove gaseous remnants, exposing and infiltrating the carbon hardmask layer to an oxidizing agent to produce an aluminum oxide coating disposed on inner surfaces of the carbon hardmask layer, and purging the process region to remove gaseous remnants.

公开(公告)号：US20240142870A1

公开(公告)日：2024-05-02

申请号：US18237648

申请日：2023-08-24

Applicant: Applied Materials, Inc.

Inventor： Yung-chen LIN ,  Zhiyu HUANG ,  Chi-I LANG ,  Ho-yung HWANG

IPC: G03F1/38 ,  G03F1/46 ,  G03F1/76 ,  G03F1/80

CPC classification number: G03F1/38 ,  G03F1/46 ,  G03F1/76 ,  G03F1/80

Abstract: Embodiments of the present disclosure generally relate to methods for enhancing carbon hardmask to have improved etching selectivity and profile control. In some embodiments, a method of treating a carbon hardmask layer is provided and includes positioning a workpiece within a process region of a processing chamber, where the workpiece has a carbon hardmask layer disposed on or over an underlying layer, and treating the carbon hardmask layer by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce an aluminum oxide carbon hybrid hardmask which is denser than the carbon hardmask layer. The SIS process includes exposing and infiltrating the carbon hardmask layer with an aluminum precursor, purging to remove gaseous remnants, exposing and infiltrating the carbon hardmask layer to an oxidizing agent to produce an aluminum oxide coating disposed on inner surfaces of the carbon hardmask layer, and purging the process region to remove gaseous remnants.

公开(公告)号：US20220189786A1

公开(公告)日：2022-06-16

申请号：US17456255

申请日：2021-11-23

Applicant: Applied Materials, Inc.

Inventor： Yung-chen LIN ,  Chi-I LANG ,  Ho-yung HWANG

IPC: H01L21/3213 ,  H01L21/02

Abstract: A method and apparatus for patterning semiconductor materials using tin-based materials as mandrels, hardmasks, and liner materials are provided. One or more implementations of the present disclosure use tin-oxide and/or tin-carbide materials as hardmask materials, mandrel materials, and/or liner material during various patterning applications. Tin-oxide or tin-carbide materials are easy to strip relative to other high selectivity materials like metal oxides (e.g., TiO2, ZrO2, HfO2, Al2O3) to avoid influencing critical dimensions and generate defects. In addition, tin-oxide and tin-carbide have low refractive index, k-value, and are transparent under 663-nm for lithography overlay.

公开(公告)号：US20190252187A1

公开(公告)日：2019-08-15

申请号：US16259585

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Yung-chen LIN ,  Qingjun ZHOU ,  Xinyu BAO ,  Ying ZHANG

IPC: H01L21/033 ,  H01L21/8234

Abstract: Embodiments described herein relate to substrate processing methods. The methods include forming a patterned hardmask material on a substrate, forming first mandrel structures on exposed regions of the substrate, and depositing a gap fill material on the substrate over the hardmask material and the first mandrel structures. The first mandrel structures are removed to expose second regions of the substrate and form second mandrel structures comprising the hardmask material and the gap fill material. Fin structures are deposited on the substrate using the second mandrel structures as a mask.