公开(公告)号：US20200335339A1

公开(公告)日：2020-10-22

申请号：US16867095

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun YANG ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG ,  Diwakar KEDLAYA ,  Meenakshi GUPTA ,  Srinivas GUGGILLA ,  Yung-chen LIN ,  Hidetaka OSHIO ,  Chao LI ,  Gene LEE

IPC: H01L21/033

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.

公开(公告)号：US20230093450A1

公开(公告)日：2023-03-23

申请号：US18072457

申请日：2022-11-30

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun YANG ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG ,  Diwakar KEDLAYA ,  Meenakshi GUPTA ,  Srinivas GUGGILLA ,  Yung-chen LIN ,  Hidetaka OSHIO ,  Chao LI ,  Gene LEE

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.