公开(公告)号：US11476093B2

公开(公告)日：2022-10-18

申请号：US16704387

申请日：2019-12-05

申请人： Applied Materials, Inc.

发明人： Toan Q. Tran ,  Soonam Park ,  Zilu Weng ,  Dmitry Lubomirsky

IPC分类号： H01J37/32

摘要： An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.

公开(公告)号：US20170309509A1

公开(公告)日：2017-10-26

申请号：US15642977

申请日：2017-07-06

申请人： Applied Materials, Inc.

发明人： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

IPC分类号： H01L21/683 ,  H01L21/67 ,  H01L21/3065

CPC分类号： H01L21/6833 ,  H01L21/3065 ,  H01L21/67103

摘要： A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

公开(公告)号：US11594428B2

公开(公告)日：2023-02-28

申请号：US15581497

申请日：2017-04-28

申请人： Applied Materials, Inc.

发明人： Toan Q. Tran ,  Zilu Weng ,  Dmitry Lubomirsky ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Son M. Phi ,  Shankar Venkataraman

IPC分类号： H01L21/67 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/687 ,  H01L21/311 ,  H01J37/32

摘要： A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

公开(公告)号：US10559451B2

公开(公告)日：2020-02-11

申请号：US15433008

申请日：2017-02-15

申请人： Applied Materials, Inc.

发明人： Nikolai Nikolaevich Kalnin ,  Toan Q. Tran ,  Dmitry Lubomirsky

IPC分类号： H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  H01L21/67 ,  F16K5/12 ,  F16K51/02 ,  C23C16/50 ,  B01F15/02 ,  C23C16/52 ,  F04D27/00

摘要： An exhaust module for a substrate processing apparatus having a body, a pumping ring, and a symmetric flow valve, is disclosed herein. The body has a first and second vacuum pump opening formed therethrough. The pumping ring is positioned in the body over both the first and second vacuum pump openings. The pumping ring includes a substantially ring shaped body having a top surface, a bottom surface, and an opening. The top surface has one or more through holes formed therein, arranged in a pattern concentric with the first vacuum pump opening. The bottom surface has a fluid passage formed therein, interconnecting each of the one or more through holes. The opening is formed in the substantially ring shaped body, substantially aligned with the vacuum pump opening. The symmetric flow valve is positioned in the body over the pumping ring and movable between a raised position and a lowered position.

公开(公告)号：US20170062184A1

公开(公告)日：2017-03-02

申请号：US14838086

申请日：2015-08-27

申请人： APPLIED MATERIALS, INC.

发明人： Toan Q. Tran ,  Soonam Park ,  Zilu Weng ,  Dmitry Lubomirsky

IPC分类号： H01J37/32

CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32532 ,  H01J37/32715

摘要： An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.

摘要翻译： 一种等离子体处理装置，包括第一等离子体源，第一平面电极，气体分配装置，等离子体阻挡屏和工件卡盘。 第一等离子体源产生通过第一等离子体源穿过第一平面电极中的第一孔的第一等离子体产物。 第一等离子体产物继续通过气体分配装置中的第二孔。 等离子体阻挡屏幕包括具有第四孔的第三板，面向气体分配装置，使得第一等离子体产物通过多个第四孔。 工件卡盘面对等离子体阻挡屏幕的第二侧，在等离子体阻挡屏幕和工件卡盘之间限定一个处理室。 第四孔具有足够小的尺寸以阻挡在处理室中产生的等离子体到达气体分配装置。

公开(公告)号：US12009228B2

公开(公告)日：2024-06-11

申请号：US18175104

申请日：2023-02-27

申请人： Applied Materials, Inc.

发明人： Toan Q. Tran ,  Zilu Weng ,  Dmitry Lubomirsky ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Son M. Phi ,  Shankar Venkataraman

IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/687 ,  H01L21/311

CPC分类号： H01L21/67069 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/31116 ,  H01L21/31138

摘要： A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

公开(公告)号：US20210183620A1

公开(公告)日：2021-06-17

申请号：US16713615

申请日：2019-12-13

申请人： Applied Materials, Inc.

发明人： Wei Tian ,  Toan Q. Tran ,  Dmitry Lubomirsky ,  Greg Toland ,  Satoru Kobayashi

IPC分类号： H01J37/32 ,  H01L21/67

摘要： Exemplary processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The chambers may include a showerhead positioned within the chamber housing. The showerhead may at least partially separate the interior region into a remote region and a processing region. Sidewalls of the chamber housing may at least partially define the processing region. The chambers may include a substrate support extending into the processing region and configured to support a substrate. The chambers may include an inductively-coupled plasma source positioned between the showerhead and the substrate support. The inductively-coupled plasma source may include a conductive material disposed within a dielectric material. The inductively-coupled plasma source may form a portion of the sidewalls of the chamber housing.

公开(公告)号：US11004661B2

公开(公告)日：2021-05-11

申请号：US14994425

申请日：2016-01-13

申请人： Applied Materials, Inc.

发明人： Toan Q. Tran ,  Soonam Park ,  Junghoon Kim ,  Dmitry Lubomirsky

IPC分类号： H01J37/32 ,  H01L21/683 ,  H01L21/311 ,  H01L21/67

摘要： A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.

公开(公告)号：US20190119815A1

公开(公告)日：2019-04-25

申请号：US16167074

申请日：2018-10-22

申请人： Applied Materials, Inc.

发明人： Soonam Park ,  Toan Q. Tran ,  Nikolai Kalnin ,  Dmitry Lubomirsky ,  Akhil Devarakonda

IPC分类号： C23C16/455 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/02

摘要： Systems and methods may be used to enact plasma filtering. Exemplary processing chambers may include a showerhead. The processing chambers may include a substrate support. The processing chambers may include a power source electrically coupled with the substrate support and configured to provide power to the substrate support to produce a bias plasma within a processing region defined between the showerhead and the substrate support. The processing systems may include a plasma screen coupled with the substrate support and configured to substantially eliminate plasma leakage through the plasma screen. The plasma screen may be coupled with electrical ground.

公开(公告)号：US09728437B2

公开(公告)日：2017-08-08

申请号：US14612472

申请日：2015-02-03

申请人： Applied Materials, Inc.

发明人： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

IPC分类号： H01L21/683 ,  H01L21/3065 ,  H01L21/67

CPC分类号： H01L21/6833 ,  H01L21/3065 ,  H01L21/67103

摘要： A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.