公开(公告)号：US20200035540A1

公开(公告)日：2020-01-30

申请号：US16049037

申请日：2018-07-30

Applicant: Applied Materials, Inc.

Inventor： Paneendra Prakash Bhat ,  Mehmet Samir ,  Nikolai Kalnin

IPC: H01L21/687 ,  G01C9/02 ,  H01L21/67

Abstract: Exemplary apparatuses for centering and/or leveling a pedestal of a processing chamber may include a mounting block having a central axis, a set of first gauges mounted on the mounting block, and a set of second gauges mounted on the mounting block. The set of second gauges may be mounted substantially perpendicular to the set of first gauges. The plurality of first gauges may be configured to obtain measurements indicative of a degree of parallelism between a gas distribution plate of the processing chamber and the pedestal. The plurality of second gauges may be configured to obtain measurements indicative of a degree of axial alignment of a ring member of the processing chamber and the pedestal. The exemplary apparatuses may be used for centering and/or leveling the pedestal under vacuum.

公开(公告)号：US20180366378A1

公开(公告)日：2018-12-20

申请号：US15625454

申请日：2017-06-16

Applicant: Applied Materials, Inc.

Inventor： Junghoon Kim ,  Soonam Park ,  Tae Seung Cho ,  Dmitry Lubomirsky ,  Nikolai Kalnin

IPC: H01L21/66 ,  H01L21/67 ,  H01J37/32 ,  C23C16/513

Abstract: Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The VRF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the VRF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.

公开(公告)号：US10672642B2

公开(公告)日：2020-06-02

申请号：US16049037

申请日：2018-07-30

Applicant: Applied Materials, Inc.

Inventor： Paneendra Prakash Bhat ,  Mehmet Samir ,  Nikolai Kalnin

IPC: H01L21/687 ,  G01C9/02 ,  H01L21/67 ,  H01J37/32

Abstract: Exemplary apparatuses for centering and/or leveling a pedestal of a processing chamber may include a mounting block having a central axis, a set of first gauges mounted on the mounting block, and a set of second gauges mounted on the mounting block. The set of second gauges may be mounted substantially perpendicular to the set of first gauges. The plurality of first gauges may be configured to obtain measurements indicative of a degree of parallelism between a gas distribution plate of the processing chamber and the pedestal. The plurality of second gauges may be configured to obtain measurements indicative of a degree of axial alignment of a ring member of the processing chamber and the pedestal. The exemplary apparatuses may be used for centering and/or leveling the pedestal under vacuum.

公开(公告)号：US20180226230A1

公开(公告)日：2018-08-09

申请号：US15424488

申请日：2017-02-03

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Nikolai Kalnin ,  Soonam Park ,  Toan Tran ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67

Abstract: A system includes a process chamber, a housing that defines a waveguide cavity, and a first conductive plate within the housing. The first conductive plate faces the process chamber. The system also includes one or more adjustment devices that can adjust at least a position of the first conductive plate, and a second conductive plate, coupled with the housing, between the waveguide cavity and the process chamber. Electromagnetic radiation can propagate from the waveguide cavity into the process chamber through apertures in the second conductive plate. The system also includes a dielectric plate that seals off the process chamber from the waveguide cavity, and one or more electronics sets that transmit the electromagnetic radiation into the waveguide cavity. A plasma forms when at least one process gas is within the chamber, and the electromagnetic radiation propagates into the process chamber from the waveguide cavity.

公开(公告)号：US10920320B2

公开(公告)日：2021-02-16

申请号：US15625454

申请日：2017-06-16

Applicant: Applied Materials, Inc.

Inventor： Junghoon Kim ,  Soonam Park ,  Tae Seung Cho ,  Dmitry Lubomirsky ,  Nikolai Kalnin

IPC: C23C16/513 ,  B81C99/00 ,  H01L21/66 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/311 ,  H01J37/32

Abstract: Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The VRF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the VRF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.

公开(公告)号：US10903052B2

公开(公告)日：2021-01-26

申请号：US16537048

申请日：2019-08-09

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Nikolai Kalnin ,  Soonam Park ,  Toan Tran ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67

Abstract: Exemplary systems according to embodiments of the present technology include a housing that defines a process chamber and a waveguide cavity. A first conductive plate is disposed within the housing. The system also includes a second conductive plate positioned within the housing and at least partially defining the waveguide cavity. The second conductive plate is vertically translatable within the housing to adjust a distance between the first conductive plate and the second conductive plate to affect modes of electromagnetic radiation propagating within the waveguide cavity. The systems also include one or more electronics sets that are configured to transmit the electromagnetic radiation into the waveguide cavity to produce plasma from at least one process gas delivered within the process chamber.

公开(公告)号：US10431429B2

公开(公告)日：2019-10-01

申请号：US15424488

申请日：2017-02-03

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Nikolai Kalnin ,  Soonam Park ,  Toan Tran ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67

Abstract: A system includes a process chamber, a housing that defines a waveguide cavity, and a first conductive plate within the housing. The first conductive plate faces the process chamber. The system also includes one or more adjustment devices that can adjust at least a position of the first conductive plate, and a second conductive plate, coupled with the housing, between the waveguide cavity and the process chamber. Electromagnetic radiation can propagate from the waveguide cavity into the process chamber through apertures in the second conductive plate. The system also includes a dielectric plate that seals off the process chamber from the waveguide cavity, and one or more electronics sets that transmit the electromagnetic radiation into the waveguide cavity. A plasma forms when at least one process gas is within the chamber, and the electromagnetic radiation propagates into the process chamber from the waveguide cavity.

公开(公告)号：US11049755B2

公开(公告)日：2021-06-29

申请号：US16131972

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： David Benjaminson ,  Michael Grace ,  Soonam Park ,  Dmitry Lubomirsky ,  Jaeyong Cho ,  Nikolai Kalnin ,  Don Channa K Kaluarachchi

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: Exemplary support assemblies may include a top puck defining a substrate support surface, where the top puck is also characterized by a height. The assemblies may include a stem coupled with the top puck on a second surface of the top puck opposite the substrate support surface. The assemblies may include an RF electrode embedded within the top puck proximate the substrate support surface. The assemblies may include a heater embedded within the top puck. The assemblies may also include a ground shield embedded within the top puck. The ground shield may be characterized by an inner region extending radially through the top puck. The ground shield may further be characterized by an outer region extending perpendicular to the inner region.

公开(公告)号：US20200090972A1

公开(公告)日：2020-03-19

申请号：US16131972

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： David Benjaminson ,  Michael Grace ,  Soonam Park ,  Dmitry Lubomirsky ,  Jaeyong Cho ,  Nikolai Kalnin ,  Don Channa K. Kaluarachchi

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: Exemplary support assemblies may include a top puck defining a substrate support surface, where the top puck is also characterized by a height. The assemblies may include a stem coupled with the top puck on a second surface of the top puck opposite the substrate support surface. The assemblies may include an RF electrode embedded within the top puck proximate the substrate support surface. The assemblies may include a heater embedded within the top puck. The assemblies may also include a ground shield embedded within the top puck. The ground shield may be characterized by an inner region extending radially through the top puck. The ground shield may further be characterized by an outer region extending perpendicular to the inner region.

公开(公告)号：US20190119815A1

公开(公告)日：2019-04-25

申请号：US16167074

申请日：2018-10-22

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Toan Q. Tran ,  Nikolai Kalnin ,  Dmitry Lubomirsky ,  Akhil Devarakonda

IPC: C23C16/455 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/02

Abstract: Systems and methods may be used to enact plasma filtering. Exemplary processing chambers may include a showerhead. The processing chambers may include a substrate support. The processing chambers may include a power source electrically coupled with the substrate support and configured to provide power to the substrate support to produce a bias plasma within a processing region defined between the showerhead and the substrate support. The processing systems may include a plasma screen coupled with the substrate support and configured to substantially eliminate plasma leakage through the plasma screen. The plasma screen may be coupled with electrical ground.