公开(公告)号：US20140295665A1

公开(公告)日：2014-10-02

申请号：US14303292

申请日：2014-06-12

Applicant: Applied Materials, Inc.

Inventor： Bo ZHENG ,  Arvind SUNDARRAJAN ,  Xinyu FU

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/02063 ,  H01J37/32082 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/743 ,  H01L21/768

Abstract: Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

Abstract translation: 通过在单个处理室中在衬底上依次执行两个等离子体清洗工艺，从衬底的表面除去天然氧化物和相关残留物。 第一等离子体清洁工艺通过从氨（NH 3）和三氟化氮（NF 3）气体的混合物中产生清洁等离子体，从而将清洁等离子体的产物冷凝在天然氧化物上，从而去除在基底表面上形成的天然氧化物，形成薄膜， 含有六氟硅酸铵（（NH 4）2 SiF 6），并将薄膜从衬底表面上升华。 通过从三氟化氮气体产生第二清洗等离子体，第二等离子体清洗工艺去除剩余的薄膜残留物。 第二清洗等离子体的产物与表面上存在的裸硅几埃反应，形成四氟化硅（SiF4）并提取薄膜的残留物。

公开(公告)号：US20140011339A1

公开(公告)日：2014-01-09

申请号：US13929496

申请日：2013-06-27

Applicant: Applied Materials, Inc.

Inventor： Bo ZHENG ,  Avgerinos V. GELATOS ,  Ahmed KHALED

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/02046 ,  H01L21/02057

Abstract: Native oxides and residue are removed from surfaces of a substrate by performing a hydrogen remote plasma process on the substrate. In one embodiment, the method for removing native oxides from a substrate includes transferring a substrate containing native oxide disposed on a material layer into a processing chamber, wherein the material layer includes a Ge containing layer or a III-V compound containing layer, supplying a gas mixture including a hydrogen containing gas from a remote plasma source into the processing chamber, and activating the native oxide by the hydrogen containing gas to remove the oxide layer from the substrate.

Abstract translation: 通过在衬底上执行氢远距离等离子体处理，从衬底的表面除去天然氧化物和残余物。 在一个实施方案中，从衬底去除天然氧化物的方法包括将包含设置在材料层上的天然氧化物的衬底转移到处理室中，其中所述材料层包括含Ge层或含III-V族化合物的层， 气体混合物，其包括来自远程等离子体源的含氢气体进入处理室，以及通过含氢气体活化天然氧化物以从衬底去除氧化物层。

公开(公告)号：US20160322229A1

公开(公告)日：2016-11-03

申请号：US14790862

申请日：2015-07-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Seshadri GANGULI ,  Yixiong YANG ,  Bhushan N. ZOPE ,  Xinyu FU ,  Avgerinos V. GELATOS ,  Guoqiang JIAN ,  Bo ZHENG

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/324

CPC classification number: H01L21/28518 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53266

Abstract: Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer includes: (a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium; (b) exposing the substrate to a precursor gas comprising a metal halide; (c) purging the precursor gas from the process chamber using an inert gas; (d) exposing the substrate to a silicon containing gas; (e) purging the silicon containing gas from the process chamber using an inert gas; (f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a predetermined thickness; and (g) annealing the substrate after depositing the metal silicide layer.

Abstract translation: 本文提供了选择性沉积金属硅化物层的方法。 在一些实施例中，选择性沉积金属硅化物层的方法包括：（a）向处理室提供具有第一层的衬底，其中第一层包括第一表面和形成在第一表面中的特征，包括限定的开口 通过一个或多个侧壁和底表面，其中所述侧壁包括氧化硅或氮化硅之一，并且其中所述底表面包括硅或锗中的至少一种; （b）将衬底暴露于包含金属卤化物的前体气体; （c）使用惰性气体从处理室吹扫前体气体; （d）将衬底暴露于含硅气体; （e）使用惰性气体从处理室清洗含硅气体; （f）重复（b） - （e）沿着底表面选择性地沉积金属硅化物至预定厚度; 和（g）在沉积金属硅化物层之后退火衬底。

公开(公告)号：US20150093891A1

公开(公告)日：2015-04-02

申请号：US14482601

申请日：2014-09-10

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang Ho YU ,  Mathew ABRAHAM

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  C23C16/18 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76883

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

Abstract translation: 提供了在半导体器件的特征定义中沉积金属层的方法。 在一个实施方案中，提供了一种用于沉积用于形成半导体器件的金属层的方法。 该方法包括进行循环金属沉积工艺以将金属层沉积在衬底上并使设置在衬底上的金属层退火。 循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将金属层的一部分沉积在衬底上，将金属层的一部分暴露于等离子体处理工艺或氢退火工艺中，并重复暴露衬底 到沉积前体气体混合物并将金属层的该部分暴露于等离子体处理工艺或氢气退火工艺中，直到达到金属层的预定厚度。

公开(公告)号：US20180068890A1

公开(公告)日：2018-03-08

申请号：US15811647

申请日：2017-11-13

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-Ho YU ,  Mathew ABRAHAM

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L21/48 ,  H01L21/285 ,  H01L29/66

CPC classification number: H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US20160247718A1

公开(公告)日：2016-08-25

申请号：US15145578

申请日：2016-05-03

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-ho YU ,  Mathew ABRAHAM

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US20170365468A1

公开(公告)日：2017-12-21

申请号：US15674606

申请日：2017-08-11

Applicant: Applied Materials, Inc.

Inventor： Bo ZHENG ,  Avgerinos V. GELATOS ,  Anshul VYAS ,  Raymond Hoiman HUNG

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/48 ,  H01L21/67 ,  C23C16/02

CPC classification number: H01L21/02661 ,  C23C16/0245 ,  C23C16/4405 ,  C23C16/481 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67207

Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.

公开(公告)号：US20170084486A1

公开(公告)日：2017-03-23

申请号：US15364780

申请日：2016-11-30

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang Ho YU ,  Mathew ABRAHAM

IPC: H01L21/768 ,  H01L21/285

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

公开(公告)号：US20160079062A1

公开(公告)日：2016-03-17

申请号：US14846215

申请日：2015-09-04

Applicant: Applied Materials, Inc.

Inventor： Bo ZHENG ,  Avgerinos V. GELATOS ,  Anshul VYAS ,  Raymond Hoiman HUNG

IPC: H01L21/02 ,  H01L29/161 ,  H01L21/324

CPC classification number: H01L21/02661 ,  C23C16/0245 ,  C23C16/4405 ,  C23C16/481 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67207

Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.

Abstract translation: 本公开一般涉及从基底表面去除污染物和天然氧化物的方法。 该方法包括将衬底的表面暴露于第一氢自由基物质，其中衬底是具有高于约30％的锗浓度的硅锗，然后将衬底的表面暴露于由含氟前体形成的等离子体 含氢前体，然后将底物的表面暴露于第二氢自由基物质。

公开(公告)号：US20140326276A1

公开(公告)日：2014-11-06

申请号：US14255443

申请日：2014-04-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Kai WU ,  Bo ZHENG ,  Sang Ho YU ,  Avgerinos V. GELATOS ,  Bhushan N. ZOPE ,  Jeffrey ANTHIS ,  Benjamin SCHMIEGE

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  B08B9/00 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862

Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.

Abstract translation: 本文描述的实施方式一般涉及用于从半导体衬底处理室的一个或多个内表面原位去除不想要的沉积累积的方法和装置。 在一个实施方式中，提供了在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除含钴或钴的沉积物的方法。 该方法包括从含氟清洗气体混合物中形成反应性物质，使反应物质与钴和/或含钴沉积物反应形成气态氟化钴，并将氟化氢以气态吹扫出来 基板处理室。