公开(公告)号：US20240368754A1

公开(公告)日：2024-11-07

申请号：US18773309

申请日：2024-07-15

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Cheng CHENG ,  Kai WU ,  Insu HA ,  Sang Jin LEE

IPC: C23C16/38 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56

Abstract: A structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The nucleation layer is disposed along sidewalls of the opening. The nucleation layer includes boron and tungsten. The fill layer is disposed over the nucleation layer within the opening. The tungsten-containing layer includes a resistivity of about 16 μΩ·cm or less. The tungsten-containing layer has a thickness of about 200 Å to about 600 Å. The tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

公开(公告)号：US20240352588A1

公开(公告)日：2024-10-24

申请号：US18379028

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Kai WU ,  Dongming IU ,  Mehran BEHDJAT

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4587 ,  C23C16/45574 ,  C23C16/4586

Abstract: A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable a chemical vapor deposition (CVD) chamber to process substrates (also referred to as wafers herein) at different temperatures. The processing chamber includes a chamber body, a substrate support disposed within the chamber body and having a top surface, a plurality of substrate lift pins disposed through the substrate support, and a shadow ring lift assembly. The shadow ring lift assembly is operable to raise and lower a shadow ring positioned above or level with the top surface of the substrate support.

公开(公告)号：US20240266215A1

公开(公告)日：2024-08-08

申请号：US18107326

申请日：2023-02-08

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Yang LI ,  Kai WU ,  Mehran BEHDJAT ,  Jallepally RAVI

IPC: H01L21/768 ,  H01L21/3205

CPC classification number: H01L21/76876 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76877

Abstract: A method of forming a structure on a substrate, includes forming a nucleation layer within an opening of the substrate within a processing chamber. The method further includes forming a passivation layer on at least a portion of the nucleation layer by introducing radical treatment into the processing chamber. The method further includes forming a tungsten fill layer within the opening over the passivation layer and the nucleation layer, wherein the tungsten fill layer is formed by a plurality of treatment cycles. Each treatment cycle includes pulsing a first gas at the substrate for a pulse time duration while concurrently flowing a second gas over the substrate, and purging the first gas and the second gas by flowing a purge gas over the substrate for a purge time duration.

公开(公告)号：US20240258109A1

公开(公告)日：2024-08-01

申请号：US18532381

申请日：2023-12-07

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Min-Han LEE ,  Yang LI ,  Cheng CHENG ,  Zhixiu LIANG

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/14 ,  C23C16/34

CPC classification number: H01L21/28568 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/34

Abstract: A method of forming a structure on a substrate includes forming an adhesion layer on a substrate. The method further includes forming a tungsten containing layer in-situ with the adhesion layer. The tungsten containing layer is formed by a one-time soak process including soaking the substrate once, and only once, in a first gas, purging the first gas, and soaking the substrate once, and only once, in a second gas. The method further includes removing the tungsten containing layer from the adhesion layer.

公开(公告)号：US20240162089A1

公开(公告)日：2024-05-16

申请号：US18054798

申请日：2022-11-11

Applicant: Applied Materials, Inc.

Inventor： Dixiong WANG ,  Xi CEN ,  Kai WU ,  Peiqi WANG ,  Yang LI

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/76876 ,  H01L21/76883

Abstract: A method of forming a structure on a substrate that includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer to a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow points within the at least one opening. The method includes exposing the at least one opening of the substrate to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening to a molybdenum-containing gas to remove a tungsten nitride layer from the tungsten fill layer.

公开(公告)号：US20150050807A1

公开(公告)日：2015-02-19

申请号：US14337908

申请日：2014-07-22

Applicant: Applied Materials, Inc.

Inventor： Kai WU ,  Sang Ho YU

IPC: H01L21/3205 ,  H01L21/3213

CPC classification number: H01L21/28556 ,  C23C16/045 ,  C23C16/14 ,  H01L21/32136 ,  H01L21/76877

Abstract: Implementations described herein generally relate to methods for forming tungsten materials on substrates using vapor deposition processes. The method comprises positioning a substrate having a feature formed therein in a substrate processing chamber, depositing a first film of a bulk tungsten layer by introducing a continuous flow of a hydrogen containing gas and a tungsten halide compound to the processing chamber to deposit the first tungsten film over the feature, etching the first film of the bulk tungsten layer using a plasma treatment to remove a portion of the first film by exposing the first film to a continuous flow of the tungsten halide compound and an activated treatment gas and depositing a second film of the bulk tungsten layer by introducing a continuous flow of the hydrogen containing gas and the tungsten halide compound to the processing chamber to deposit the second tungsten film over the first tungsten film.

Abstract translation: 本文描述的实施方案通常涉及使用气相沉积工艺在基底上形成钨材料的方法。 该方法包括将具有其中形成的特征的基板定位在基板处理室中，通过将含氢气体和卤化钨化合物的连续流引入到处理室中来沉积第一钨体层的第一膜以沉积第一钨 通过使用等离子体处理来蚀刻体钨层的第一膜，以通过将第一膜暴露于卤化钨化合物和活性处理气体的连续流动并沉积第二膜来去除一部分第一膜 通过将含氢气体和卤化钨化合物的连续流引入处理室以将第二钨膜沉积在第一钨膜上。

公开(公告)号：US20240371654A1

公开(公告)日：2024-11-07

申请号：US18142940

申请日：2023-05-03

Applicant: Applied Materials, Inc.

Inventor： Qihao ZHU ,  Chi Hong CHING ,  Liqi WU ,  Tsungjui LIU ,  Gaurav THAREJA ,  Xinke WANG ,  Feng Q. LIU ,  Xi CEN ,  Kai WU ,  Yixiong YANG ,  Yuanhung LIU ,  Jiang LU ,  Rongjun WANG ,  Xianmin TANG

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/768

Abstract: A method of filling a feature in a semiconductor structure with metal includes depositing a metal cap layer on a bottom surface of a feature formed within a dielectric layer and top surfaces of the dielectric layer, partially filling the feature from the bottom surface with a flowable polymer layer, performing a metal pullback process to remove the metal cap layer on the top surfaces of the dielectric layer selectively to the dielectric layer, wherein the metal pullback process includes a first etch process including a chemical etch process using molybdenum hexafluoride (MoF6) to remove the metal cap layer selectively to the dielectric layer, and a second etch process to remove residues on etched surfaces of the dielectric layer, removing the flowable polymer layer, pre-cleaning a surface of the metal cap layer, and filling the feature from the surface of the metal cap layer with metal fill material.

公开(公告)号：US20240229230A1

公开(公告)日：2024-07-11

申请号：US18614912

申请日：2024-03-25

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Mohammed Jaheer SHERFUDEEN ,  David Matthew SANTI ,  Jallepally RAVI ,  Peiqi WANG ,  Kai WU

IPC: C23C16/08 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/08 ,  C23C16/45523 ,  C23C16/458

Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.

公开(公告)号：US20230357929A1

公开(公告)日：2023-11-09

申请号：US17862138

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Jallepally RAVI ,  Cheng CHENG ,  Peiqi WANG ,  Kai WU

IPC: C23C16/458 ,  H01L21/687 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/4585 ,  H01L21/68721 ,  C23C16/46 ,  C23C16/45565

Abstract: A shadow ring for a processing chamber, such as a semiconductor processing chamber, is an annular member including a body with a radially inwardly projecting lip. The shadow ring includes a feature that mitigates heat transfer between the lip and the rest of the body. In one example, the feature includes a plurality of apertures, each aperture extending from an upper opening at an upper surface of the shadow ring to a corresponding lower opening at a lower surface of the shadow ring. A neck between adjacent apertures creates a bottleneck that hinders conductive heat transfer.

公开(公告)号：US20230340662A1

公开(公告)日：2023-10-26

申请号：US17729943

申请日：2022-04-26

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Mohammed Jaheer SHERFUDEEN ,  David Matthew SANTI ,  Jallepally Ravi ,  Peiqi WANG ,  Kai WU

IPC: C23C16/08 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/08 ,  C23C16/45523 ,  C23C16/458

Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.