摘要:
A transmissive spectral purity filter configured to transmit extreme ultraviolet radiation includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in semiconductor material such as silicon by an anisotropic etching process. The semiconductor material is provided with a hydrogen-resistant layer, such as silicon nitride Si3N4, silicon dioxide SiO2, or silicon carbide SiC.
摘要翻译:配置为透射极紫外线辐射的透射光谱纯度滤光器包括具有多个孔以过滤极紫外辐射并抑制第二类辐射的透射的滤光器部分。 可以通过各向异性蚀刻工艺在诸如硅的半导体材料中制造孔。 半导体材料设置有耐氮层,例如氮化硅Si 3 N 4,二氧化硅SiO 2或碳化硅SiC。
摘要:
The invention relates to a method and device of inspecting contamination particles on an object comprising a patterned structure. The device includes a radiation system for directing a radiation beam to the object. The object is configured to scatter the beam. The device also includes an optical system arranged to receive scattered radiation from the object, and a filter provided in the optical system. The filter is associated with the patterned structure so as to filter out radiation from the scattered radiation. The device also includes a detector arranged to detect a fraction of radiation that is transmitted by the filter. Accordingly, contamination particles may be detected quickly and accurately.
摘要:
A radiation source generates short-wavelength radiation, such as extreme ultraviolet radiation, for use in lithography. Rotating electrodes are provided which dip into respective baths of liquid metal, for example, tin. An electrical discharge is produced between the electrodes to generate the radiation. Holes are provided in the electrodes and/or in a metal shielding plate around the electrodes to enable better pumping down to low pressure in the vicinity of the discharge to improve the conversion efficiency of the source. The holes in the electrodes improve cooling of the electrodes by causing stirring of the liquid metal, and by improving the thermal and electrical contact between the electrodes and the liquid metal. Improved electrical contact also reduces the time-constant of the discharge circuit, thereby further improving the conversion efficiency of the source.
摘要:
The invention relates to a lithographic apparatus that includes a system configured to condition a radiation beam or project a patterned radiation beam onto a target portion of a substrate. The system includes an optically active device configured to direct the radiation beam or the patterned radiation beam, respectively, and a support structure configured to support the optically active device. The apparatus further includes a gas supply for providing a background gas into the system. The radiation beam or patterned radiation beam react with the background gas to form a plasma that includes a plurality of ions. The support structure includes an element that includes a material that has a low sputtering yield, a high sputter threshold energy, or a high ion implantation yield, to reduce sputtering and the creation of sputtering products.
摘要:
A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.
摘要:
A lithographic apparatus includes a collector configured to collect radiation from a radiation source, the collector including a plurality of shells forming separate compartments, and a cleaning arrangement including a gas inlet and a gas outlet, the cleaning arrangement being configured to clean surfaces of the plurality of shells by guiding a gas flow from the inlet through the compartments to the outlet. The cleaning arrangement includes a distribution system configured to divide the gas flow into several sub flows, each of the sub flows corresponding to one or more of the compartments, and a control system configured to control the relative amount of the sub flows.
摘要:
A radiation system for providing a projection beam of radiation in a lithographic apparatus is disclosed. The radiation system includes an EUV source for providing EUV radiation, and a contamination barrier that includes a plurality of foil plates for trapping contaminant material coming from the EUV source. The foil plates are arranged in an optically closed arrangement so that at least one of the foil plates reflects EUV radiation passing the contamination barrier at least one time.
摘要:
A multi-layer mirror includes on top of the multi-layer mirror a spectral purity enhancement layer, for example for application in an EUV lithographic apparatus. This spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may optionally be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. Hence, multi-layer mirrors with the following configurations are possible: multi-layer mirror/first spectral purity enhancement layer; multi-layer mirror/intermediate layer/first spectral purity enhancement layer; and multi-layer mirror/second spectral purity enhancement layer/intermediate layer/first spectral purity enhancement layer. The spectral purity of normal incidence radiation may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.
摘要:
A lithographic apparatus includes an illumination system configured to provide a beam of radiation, a support configured to support a patterning device, a substrate table and a projection system. Furthermore, the lithographic apparatus includes a plurality of EUV sources for providing EUV radiation to the illumination system and a distributor which is arranged to convert the EUV radiation from each of the EUV sources into an intermediate beam of radiation. The intermediate beam of radiation is directed from the distributor in a first direction by a mirror surface. The distributor may include a rotationally driven mirror arrangement, the axis of rotation being non-parallel to the mirror surface.
摘要:
A lithographic apparatus includes a radiation system that includes a source for producing a radiation beam, a contaminant trap arranged in a path of the radiation beam, and an illumination system configured to condition the radiation beam produced by the source, and a support for supporting a patterning device. The patterning device serves to impart the conditioned radiation beam with a pattern in its cross-section. The apparatus also includes a substrate table for holding a substrate, and a projection system for projecting the patterned radiation beam onto a target portion of the substrate. The contaminant trap includes a plurality of foils that define channels that are arranged substantially parallel to the direction of propagation of the radiation beam. The trap is provided with a gas supply system that is arranged to inject gas into at least one of the channels of the trap.