公开(公告)号：US20070145295A1

公开(公告)日：2007-06-28

申请号：US11296702

申请日：2005-12-08

申请人： Vadim Banine ,  Vladimir Ivanov ,  Johannes Josephina Moors ,  Bastiaan Wolschrijn ,  Derk Jan Klunder ,  Maarten Johannes Wilhelmus Van Herpen

发明人： Vadim Banine ,  Vladimir Ivanov ,  Johannes Josephina Moors ,  Bastiaan Wolschrijn ,  Derk Jan Klunder ,  Maarten Johannes Wilhelmus Van Herpen

IPC分类号： A61N5/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以配置在设备内的特定位置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。