发明申请
- 专利标题： Radical cleaning arrangement for a lithographic apparatus
- 专利标题（中）： 用于光刻设备的自由清洁装置
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申请号： US11296702申请日： 2005-12-08
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公开(公告)号： US20070145295A1公开(公告)日： 2007-06-28
- 发明人: Vadim Banine , Vladimir Ivanov , Johannes Josephina Moors , Bastiaan Wolschrijn , Derk Jan Klunder , Maarten Johannes Wilhelmus Van Herpen
- 申请人： Vadim Banine , Vladimir Ivanov , Johannes Josephina Moors , Bastiaan Wolschrijn , Derk Jan Klunder , Maarten Johannes Wilhelmus Van Herpen
- 申请人地址： NL Veldhoven
- 专利权人： ASML NETHERLANDS B.V.
- 当前专利权人： ASML NETHERLANDS B.V.
- 当前专利权人地址： NL Veldhoven
- 主分类号： A61N5/00
- IPC分类号： A61N5/00
摘要：
A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.
公开/授权文献
- US07462850B2 Radical cleaning arrangement for a lithographic apparatus 公开/授权日：2008-12-09
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