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    WIRING SUBSTRATE, MULTI-PIECE WIRING SUBSTRATE, AND METHOD FOR PRODUCING SAME
    1.
    发明申请
    WIRING SUBSTRATE, MULTI-PIECE WIRING SUBSTRATE, AND METHOD FOR PRODUCING SAME 有权
    配线基板，多层接线基板及其制造方法

    公开(公告)号：US20140034369A1

    公开(公告)日：2014-02-06

    申请号：US14110680

    申请日：2012-02-01

    申请人： Masami Hasegawa ,  Satoshi Hirayama ,  Naoki Kito

    发明人： Masami Hasegawa ,  Satoshi Hirayama ,  Naoki Kito

    IPC分类号： H05K1/02 ,  H05K3/10

    CPC分类号： H05K1/02 ,  H05K1/0306 ,  H05K3/0029 ,  H05K3/0052 ,  H05K3/10 ,  H05K2201/0909 ,  H05K2201/09154 ,  H05K2203/1476 ,  Y10T29/49162

    摘要： Provided are a ceramic wiring substrate having a side surface which realizes reliable chucking or hooking; a multi-piece wiring substrate array for providing a plurality of the wiring substrates; and a method for reliably producing the multi-piece wiring substrate array. The wiring substrate is formed of a ceramic material, has a square (rectangular) shape in plan view, and which has a front surface, a back surface, and side surfaces each being located between the front surface and the back surface, wherein each side surface has a belt-like uneven surface including a plurality of alternate and parallel convex portions and concave portions which are formed so as to extend along the front surface, and also has a fracture surface located on a side toward the back surface.

    摘要翻译： 提供一种陶瓷布线基板，其具有能够可靠地夹持或钩挂的侧面; 用于提供多个布线基板的多片式布线基板阵列; 以及可靠地制造多片式布线基板阵列的方法。 布线基板由陶瓷材料形成，在平面图中具有正方形（矩形）形状，并且具有前表面，后表面和位于前表面和后表面之间的侧表面，其中每个侧面 表面具有带状的不平坦表面，该表面包括多个交替平行的凸起部分和形成为沿前表面延伸的凹部，并且还具有位于背面侧的断裂面。

    PLASMA TREATMENT APPARATUS
    2.
    发明申请
    PLASMA TREATMENT APPARATUS 有权
    等离子体处理装置

    公开(公告)号：US20120298303A1

    公开(公告)日：2012-11-29

    申请号：US13524170

    申请日：2012-06-15

    申请人： Masayoshi IKEDA ,  Kiyotaka SAKAMOTO ,  Akihiro SAWADA ,  Yasumi SAGO ,  Masami HASEGAWA ,  Motozo KURITA

    发明人： Masayoshi IKEDA ,  Kiyotaka SAKAMOTO ,  Akihiro SAWADA ,  Yasumi SAGO ,  Masami HASEGAWA ,  Motozo KURITA

    IPC分类号： C23C16/505 ,  B05C9/00

    CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32669 ,  H05H2001/4667

    摘要： Provided is a plasma treatment apparatus capable of uniform substrate treatment by correction of unevenness in a plasma density distribution. The apparatus has a configuration such that a substrate is treated with plasma, and an evacuated container is provided with an annular antenna arranged around an outer periphery of the container, and is formed of a power supply container, and a process container where the substrate is placed, which communicates with an internal space of the power supply container. The plasma is generated in the power supply container by radio-frequency power supplied to the antenna. The plasma is diffused into the process container by a magnetic field of solenoid coils arranged around an outer periphery of the antenna. The inclination of the magnetic field is adjusted by an inclination adjustment means for adjusting the inclination of the solenoid coils with respect to the process substrate.

    摘要翻译： 提供一种等离子体处理装置，其能够通过校正等离子体密度分布中的不均匀性来均匀地进行基板处理。 该装置具有这样的结构，使得用等离子体处理基板，并且抽真空的容器设置有围绕容器的外周布置的环形天线，并且由电源容器和处理容器形成，其中基板是 放置，与电源容器的内部空间连通。 通过提供给天线的射频电力在电源容器中产生等离子体。 等离子体通过围绕天线的外周布置的螺线管线圈的磁场而扩散到处理容器中。 通过用于调节螺线管线圈相对于处理基板的倾斜度的倾斜调节装置来调节磁场的倾斜度。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07616516B2

    公开(公告)日：2009-11-10

    申请号：US12109339

    申请日：2008-04-24

    申请人： Masayuki Hirayama ,  Masami Hasegawa ,  Michitaro Kanamitsu ,  Yayoi Hayashi ,  Naoyuki Anan

    发明人： Masayuki Hirayama ,  Masami Hasegawa ,  Michitaro Kanamitsu ,  Yayoi Hayashi ,  Naoyuki Anan

    IPC分类号： G11C5/14

    CPC分类号： G11C11/412

    摘要： A semiconductor device of the present invention has a memory cell array having plural CMOS static memory cells provided at intersecting portions of plural word lines and plural complementary bit lines. In the memory cell array, a switch MOSFET which is in an OFF state in a first operation mode and in an ON state in a second operation mode different from the first operation mode and first-conductivity-type and second-conductivity-type MOSFETs having a diode configuration are provided in parallel between a first source line to which sources of first-conductivity-type MOSFETs constituting first and second CMOS inverter circuits constituting the plural static memory cells are connected and a first power supply line corresponding to the first source line. A second source line to which sources of the second conductivity-type MOSFETs constituting the first and second CMOS inverter circuits are connected is connected to the second power supply line corresponding thereto.

    摘要翻译： 本发明的半导体器件具有在多个字线和多个互补位线的交叉部分设置有多个CMOS静态存储单元的存储单元阵列。 在存储单元阵列中，开关MOSFET在与第一操作模式不同的第一操作模式和第二操作模式中处于断开状态，并且具有第一导电类型和第二导电类型的MOSFET，其具有 在构成构成多个静态存储单元的第一和第二CMOS反相器电路的第一导电型MOSFET的源极连接到的第一源极线和与第一源极线对应的第一电源线之间并联设置二极管配置。 构成第一和第二CMOS反相器电路的第二导电型MOSFET的源极连接的第二源极线连接到与其对应的第二电源线。

    Method of forming an x-ray image using photostimulable phosphor
    8.
    发明授权
    Method of forming an x-ray image using photostimulable phosphor 失效
    使用可光激发磷光体形成X射线图像的方法

    公开(公告)号：US5543080A

    公开(公告)日：1996-08-06

    申请号：US378319

    申请日：1995-01-25

    申请人： Nobuhiro Iwase ,  Hiroshi Kano ,  Shinji Tadaki ,  Masami Hasegawa ,  Nagaaki Koshino

    发明人： Nobuhiro Iwase ,  Hiroshi Kano ,  Shinji Tadaki ,  Masami Hasegawa ,  Nagaaki Koshino

    IPC分类号： C09K11/61 ,  C09K11/77 ,  C09K11/86 ,  G21K4/00

    CPC分类号： C09K11/7731 ,  C09K11/7733 ,  C09K11/7786 ,  C09K11/7791 ,  G21K4/00 ,  G21K2004/06

    摘要： A method for forming an X-ray image. The method involves the use of an X-ray transforming sheet which includes a novel stimulable phosphor on a substrate. The phosphor has a high sensitivity to a semiconductor laser as a stimulating light and is represented by the formula:{(M.sup.II X.sup.1.sub.2-2u X.sup.2.sub.2u).sub.1-x-y (M.sup.I X.sup.1.sub.1-v X.sup.2.sub.v).sub.x (M.sup.III X.sup.1.sub.3-3w X.sup.2.sub.3w).sub.y }.sub.1-a A.sub.a :bEu.sup.2+where M.sup.II represents at least one divalent metal such as Ba, Be, Mg or Ca; M.sup.1 represents at least one monovalent metal such as Li, Na, K, Rb or Cs; M.sup.III represents at least one trivalent metal such as Sc, La, Y, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Al, Ga, In or Tl; X.sup.1 represents Br or Cl; X.sup.2 represents at least one halogen atom that is different from X.sup.1 ; A represents at least one metal oxide such as BeO, MgO, CaO, SrO, BaO, ZnO, Al.sub.2 O.sub.3, Y.sub.2 O.sub.3, La.sub.2 O.sub.3, In.sub.2 O.sub.3, Ga.sub.2 O.sub.3, SiO.sub.2, TiO.sub.2, ZrO.sub.2, GeO.sub.2, SnO.sub.2, Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5 and ThO.sub.2 ; and wherein 0>x+y>0.5; 0>u+v+w a>0.1; and 0 0.2. The transforming sheet is exposed to X-rays and then the exposed phosphor is stimulated with electromagnetic radiation to release the stored energy as a phosphostimulated luminescent light which may be detected to thereby obtain an image of the object.

    摘要翻译： 一种形成X射线图像的方法。 该方法涉及使用在基片上包含新型可刺激荧光体的X射线转换片。 荧光体对作为刺激光的半导体激光器具有高灵敏度，并由下式表示：{（MIIX12-2uX22u）1-xy（MIX11-vX2v）x（MIIIX13-3wX23w）y} 1-aAa：bEu2 +其中 MII代表至少一种二价金属如Ba，Be，Mg或Ca; M1表示Li，Na，K，Rb或Cs中的至少一种一价金属; MIII表示至少一种三价金属如Sc，La，Y，Ce，Pr，Nd，Sm，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Al，Ga，In或Tl; X1表示Br或Cl; X2表示与X1不同的至少一个卤原子; A表示BeO，MgO，CaO，SrO，BaO，ZnO，Al2O3，Y2O3，La2O3，In2O3，Ga2O3，SiO2，TiO2，ZrO2，GeO2，SnO2，Nb2O5，Ta2O5和ThO2中的至少一种金属氧化物; 并且其中0> x + y> 0.5; 0> u + v + w <0.1; 0> a> 0.1; 和0 <0.2。 将转印片暴露于X射线，然后用电磁辐射刺激暴露的荧光体，以释放存储的能量作为可被检测的磷光体发光，从而获得物体的图像。

    Multi-port memory device having precharged bit lines
    9.
    发明授权
    Multi-port memory device having precharged bit lines 失效
    具有预充电位线的多端口存储器件

    公开(公告)号：US5317537A

    公开(公告)日：1994-05-31

    申请号：US888493

    申请日：1992-05-27

    申请人： Satoshi Shinagawa ,  Yoichi Sato ,  Masami Hasegawa ,  Yasushi Shimono ,  Masayuki Miyasaka ,  Takatoshi Tamura ,  Yoshio Iioka

    发明人： Satoshi Shinagawa ,  Yoichi Sato ,  Masami Hasegawa ,  Yasushi Shimono ,  Masayuki Miyasaka ,  Takatoshi Tamura ,  Yoshio Iioka

    IPC分类号： G11C11/41 ,  G11C7/14 ,  G11C8/16 ,  H04Q3/52 ,  H04Q11/04 ,  G11C13/00

    CPC分类号： G11C7/14 ,  G11C8/16

    摘要： A multi-port memory device has a memory cell array including one or more memory blocks each of which has a plurality of memory cells arranged in rows and columns, and a plurality of dummy cells, with one dummy cell being provided for each row of memory cells in each of the memory blocks so that the dummy cells are connected with associated ones of the word lines extending in the row direction. The dummy cells are further connected with dummy cell bit lines extending in the column direction. Sense amplifiers are connected to receive outputs of those memory cells in the memory cell array which are selected in a memory cell selection operation and outputs of those dummy cells among the plurality of dummy cells which are selected in the memory cell selection operation for amplifying differences between the selected memory cell outputs and the selected dummy cell outputs. Precharging and shielding arrangements are also provided for improved operation.

    摘要翻译： 多端口存储器件具有包括一个或多个存储器块的存储单元阵列，每个存储块具有以行和列排列的多个存储器单元，以及多个虚设单元，每个存储器行提供一个虚拟单元 每个存储器块中的单元，使得虚设单元与在行方向上延伸的字线相关联地连接。 虚拟单元进一步与在列方向上延伸的虚拟单元位线连接。 连接感测放大器以接收在存储单元选择操作中选择的存储单元阵列中的这些存储单元的输出，并且在存储单元选择操作中选择的多个虚设单元中的这些虚设单元的输出， 所选择的存储单元输出和所选择的虚拟单元输出。 还提供了预充电和屏蔽装置，以改善操作。