公开(公告)号：US20120298303A1

公开(公告)日：2012-11-29

申请号：US13524170

申请日：2012-06-15

Applicant: Masayoshi IKEDA ,  Kiyotaka SAKAMOTO ,  Akihiro SAWADA ,  Yasumi SAGO ,  Masami HASEGAWA ,  Motozo KURITA

Inventor： Masayoshi IKEDA ,  Kiyotaka SAKAMOTO ,  Akihiro SAWADA ,  Yasumi SAGO ,  Masami HASEGAWA ,  Motozo KURITA

IPC: C23C16/505 ,  B05C9/00

CPC classification number: H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32669 ,  H05H2001/4667

Abstract: Provided is a plasma treatment apparatus capable of uniform substrate treatment by correction of unevenness in a plasma density distribution. The apparatus has a configuration such that a substrate is treated with plasma, and an evacuated container is provided with an annular antenna arranged around an outer periphery of the container, and is formed of a power supply container, and a process container where the substrate is placed, which communicates with an internal space of the power supply container. The plasma is generated in the power supply container by radio-frequency power supplied to the antenna. The plasma is diffused into the process container by a magnetic field of solenoid coils arranged around an outer periphery of the antenna. The inclination of the magnetic field is adjusted by an inclination adjustment means for adjusting the inclination of the solenoid coils with respect to the process substrate.

Abstract translation: 提供一种等离子体处理装置，其能够通过校正等离子体密度分布中的不均匀性来均匀地进行基板处理。 该装置具有这样的结构，使得用等离子体处理基板，并且抽真空的容器设置有围绕容器的外周布置的环形天线，并且由电源容器和处理容器形成，其中基板是 放置，与电源容器的内部空间连通。 通过提供给天线的射频电力在电源容器中产生等离子体。 等离子体通过围绕天线的外周布置的螺线管线圈的磁场而扩散到处理容器中。 通过用于调节螺线管线圈相对于处理基板的倾斜度的倾斜调节装置来调节磁场的倾斜度。

公开(公告)号：US08007633B2

公开(公告)日：2011-08-30

申请号：US13064484

申请日：2011-03-28

Applicant: Akihiro Egami ,  Masayoshi Ikeda ,  Yasumi Sago ,  Yukito Nakagawa

Inventor： Akihiro Egami ,  Masayoshi Ikeda ,  Yasumi Sago ,  Yukito Nakagawa

IPC: C23C16/00 ,  H01L21/00

CPC classification number: H01J37/32623 ,  H01J37/32688 ,  Y10T428/24

Abstract: This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced. Thereby, the periodicity of the point-cusp magnetic field in the inside space is maintained as much as possible even at the peripheral edge and the asymmetry of the distribution of the magnetic field at the region where the periodicity is disturbed at the peripheral edge is reduced.

Abstract translation: 该表面处理装置具有排列有等离子体的反应器和配置有等离子体的表面的基板，以及分配在反应器的内部空间中产生点尖点磁场的磁铁板，其中， 产生等离子体。 磁体板具有多个磁体。 这些磁体通过蜂窝状晶格结构排列在圆形平面中并且平行于基板的表面。 每个磁体的一个磁极端面设置在圆形平面上形成六边形形状的每个格子点的位置。 两个邻接的磁体的磁极端面的极性被布置成交替地相反。 磁体板可以设置有通过形成正方形的格子结构排列的多个磁体，并且排列在最外侧区域的一些磁体的磁力（矫顽力）减小。 因此，即使在周边边缘，内部空间中的点尖点磁场的周期性仍然尽可能地保持，并且周边边缘周期性被扰动的区域处的磁场分布的不对称性减小 。

公开(公告)号：US07976716B2

公开(公告)日：2011-07-12

申请号：US12392385

申请日：2009-02-25

Applicant: Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Takuji Okada

Inventor： Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Takuji Okada

IPC: B44C1/22

CPC classification number: H01L21/67017 ,  H01L21/67109

Abstract: A method of using a heat exchanger efficiently and uniformly to cool or heats portions to be controlled to a prescribed temperature, and then continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates to form a fluid channel and a fin parallel with the channel or inclined by a prescribed angle on each of the two plates insides the channel so that the plate or a member in contact with the plate is cooled or heated with the fluid flowing through the channel.

Abstract translation: 使用热交换器有效地均匀地将要控制的部分冷却或加热到规定温度的方法，然后连续进行稳定的处理。 热交换器通过在两个板之间布置分隔壁而构成，以形成流体通道和平行于通道的翅片，或者在两个板的每一个上倾斜规定的角度，以使得该通道与与该通道接触的构件 板被冷却或加热流体流过通道。

公开(公告)号：US20080156440A1

公开(公告)日：2008-07-03

申请号：US12000624

申请日：2007-12-14

Applicant: Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Daisuke Kondo ,  Osamu Morita

Inventor： Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Daisuke Kondo ,  Osamu Morita

IPC: H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC classification number: C23C16/4557 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/5096 ,  H01J37/3244

Abstract: A surface processing apparatus includes a process chamber including a gas ejection mechanism; an exhaust for exhausting the inside of said process chamber; and a gas supply for supplying a gas to the gas ejection mechanism. The gas ejection mechanism includes a first gas distribution mechanism for distributing the gas into a cooling or heating mechanism, including a gas distribution plate placed in the frame member, the gas distribution plate having a plurality of holes that extend therethrough, the cooling or heating mechanism having multiple gas passages that extend therethrough, the plate having a number of outlets to eject the gas into the process chamber, wherein there are more outlets in the plate than there are gas passages, and the plate is fixed to a second gas distribution mechanism with a clamping member.

Abstract translation: 表面处理装置包括：处理室，包括气体喷射机构; 用于排出所述处理室内部的废气; 以及用于向气体喷射机构供给气体的气体供给。 气体喷射机构包括用于将气体分配到冷却或加热机构中的第一气体分配机构，包括设置在框架构件中的气体分配板，气体分配板具有穿过其延伸的多个孔，冷却或加热机构 具有延伸穿过其中的多个气体通道，所述板具有多个出口以将气体喷射到处理室中，其中板中的出口多于具有气体通道的多个出口，并且板被固定到第二气体分配机构，其具有 夹紧构件。

公开(公告)号：US07025855B2

公开(公告)日：2006-04-11

申请号：US10310685

申请日：2002-12-04

Applicant: Yasumi Sago ,  Yoneichi Ogahara ,  Masanori Miyamae

Inventor： Yasumi Sago ,  Yoneichi Ogahara ,  Masanori Miyamae

IPC: H01L21/3065

CPC classification number: H01L21/67253 ,  H01L21/67028 ,  H01L21/67069

Abstract: This application discloses an insulation-film etching system that etches an insulator film on a substrate by a species produced in plasma. The apparatus comprises a process chamber in which the etching process is carried out, a substrate holder that is provided in the process chamber and holds the substrate, a gas introduction line to introduce a gas having an etching function into the process chamber, a plasma generator to generate the plasma of the introduced gas, and a transfer mechanism to transfer the substrate into the process chamber and to transfer the substrate out of the process chamber. The gas introduction line is capable of introducing a gas having a cleaning function to remove a deposited film on an exposed surface in the process chamber, instead of the gas for the etching. The system comprises a control unit that carries out the sequence control. According as the sequence control, the cleaning is carried out after the etching.

公开(公告)号：US07011744B2

公开(公告)日：2006-03-14

申请号：US10308164

申请日：2002-12-03

Applicant: Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Jun Miyaji ,  Noriaki Tateno

Inventor： Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Jun Miyaji ,  Noriaki Tateno

IPC: B01D36/00 ,  F25B29/00

CPC classification number: G05D23/1393

Abstract: A brine supply unit for supplying brine to at least one load after controlling the brine so as to meet a target temperature of the load comprises: a heat exchanger disposed at a brine-cooling channel, through which the brine returned from the load flows, for cooling the brine with water for industrial use; a heater disposed at a brine-heating channel formed in parallel with the brine-cooling channel, through which the brine flows, for heating the brine; a mixing section disposed at a connecting portion between the brine-cooling channel and the brine-heating channel, for mixing the cooled brine and the heated brine; and a tank disposed between the mixing section and the load, which has a capacity of about 10 liters or more and is constructed so that the brine can pass therethrough slowly to relieve a sudden temperature change of the brine.

公开(公告)号：US20080053615A1

公开(公告)日：2008-03-06

申请号：US11835998

申请日：2007-08-08

Applicant: Yasumi SAGO ,  Masayoshi IKEDA ,  Nobuaki TSUCHIYA ,  Hisaaki SATO

Inventor： Yasumi SAGO ,  Masayoshi IKEDA ,  Nobuaki TSUCHIYA ,  Hisaaki SATO

IPC: C23C16/00

CPC classification number: H01J37/32706 ,  H01J37/32091

Abstract: This application discloses a High-Frequency plasma processing apparatus comprising a process chamber in which a substrate to be processed is placed, a process-gas introduction line for introducing a process gas into the process chamber, a first HF electrode provided in the process chamber, a first HF power source for applying voltage to the first HF electrode, thereby generating plasma of the process gas. The apparatus further comprises a second HF electrode facing the first HF electrode in the process chamber, interposing discharge space, and a series resonator connecting the second HF electrode and the ground. The frequency of the first HF power source is not lower than 30 MHz. The series resonator is resonant as the distributed constant circuit at the frequency of the first HF power source.

Abstract translation: 本申请公开了一种高频等离子体处理装置，其包括处理室，其中放置有待处理的基板，用于将处理气体引入处理室的处理气体引入管线，设置在处理室中的第一HF电极， 用于向第一HF电极施加电压的第一HF电源，从而产生处理气体的等离子体。 该装置还包括在处理室中面对第一HF电极的第二HF电极，插入放电空间，以及连接第二HF电极和地的串联谐振器。 第一个高频电源的频率不低于30 MHz。 串联谐振器作为第一HF电源频率的分布常数电路谐振。

公开(公告)号：US20080053614A1

公开(公告)日：2008-03-06

申请号：US11845135

申请日：2007-08-27

Applicant: Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Daisuke Kondo ,  Osamu Morita

Inventor： Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Daisuke Kondo ,  Osamu Morita

IPC: C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC classification number: C23C16/4557 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/5096 ,  H01J37/3244

Abstract: A surface processing apparatus includes a process chamber including a gas ejection mechanism; an exhaust for exhausting the inside of said process chamber; and a gas supply for supplying a gas to the gas ejection mechanism. The gas ejection mechanism includes a a first gas distribution mechanism for distributing the gas into a cooling or heating mechanism, including a gas distribution plate placed in the frame member, the gas distribution plate having a plurality of holes that extend therethrough, the cooling or heating mechanism having multiple gas passages that extend therethrough, the plate having a number of outlets to eject the gas into the process chamber, wherein there are more outlets in the plate than there are gas passages, and the plate is fixed to a second gas distribution mechanism with a clamping member.

Abstract translation: 表面处理装置包括：处理室，包括气体喷射机构; 用于排出所述处理室内部的废气; 以及用于向气体喷射机构供给气体的气体供给。 气体喷射机构包括：第一气体分配机构，用于将气体分配到冷却或加热机构中，包括布置在框架构件中的气体分配板，气体分配板具有多个穿过其延伸的孔，冷却或加热机构 具有延伸穿过其中的多个气体通道，所述板具有多个出口以将气体喷射到处理室中，其中板中的出口多于具有气体通道的多个出口，并且板被固定到第二气体分配机构，其具有 夹紧构件。

公开(公告)号：US07323081B2

公开(公告)日：2008-01-29

申请号：US10341353

申请日：2003-01-14

Applicant: Yasumi Sago ,  Masayoshi Ikeda ,  Nobuaki Tsuchiya ,  Hisaaki Sato

Inventor： Yasumi Sago ,  Masayoshi Ikeda ,  Nobuaki Tsuchiya ,  Hisaaki Sato

IPC: H01L21/306

CPC classification number: H01J37/32082

Abstract: This application discloses a High-Frequency plasma processing apparatus comprising a process chamber in which a substrate to be processed is placed, a process-gas introduction line for introducing a process gas into the process chamber, a first HF electrode provided in the process chamber, a first HF power source for applying voltage to the first HF electrode, thereby generating plasma of the process gas. The apparatus further comprises a second HF electrode facing the first HF electrode in the process chamber, interposing discharge space, and a series resonator connecting the second electrode and the ground. The frequency of the first HF power source is not lower than 30 MHz. The series resonator is resonant as the distributed constant circuit at the frequency of the first HF power source.

Abstract translation: 本申请公开了一种高频等离子体处理装置，其包括处理室，其中放置有待处理的基板，用于将处理气体引入处理室的处理气体引入管线，设置在处理室中的第一HF电极， 用于向第一HF电极施加电压的第一HF电源，从而产生处理气体的等离子体。 该装置还包括面对处理室中的第一HF电极的第二HF电极，插入放电空间，以及连接第二电极和地的串联谐振器。 第一个高频电源的频率不低于30 MHz。 串联谐振器作为第一HF电源频率的分布常数电路谐振。

公开(公告)号：US20080014363A1

公开(公告)日：2008-01-17

申请号：US11779169

申请日：2007-07-17

Applicant: Yasumi SAGO ,  Masayoshi IKEDA ,  Kazuaki KANEKO ,  Hiroki DATE

Inventor： Yasumi SAGO ,  Masayoshi IKEDA ,  Kazuaki KANEKO ,  Hiroki DATE

IPC: H05C1/00

CPC classification number: H01L21/6831 ,  C23C16/4586 ,  H01J2237/2001

Abstract: This invention presents an ESC mechanism for chucking an object electro-statically on a chucking surface, comprising a stage having a dielectric block of which surface is the chucking surface, and a chucking electrode provided in the dielectric block. A temperature controller is provided with the stage for controlling temperature of the object. A chucking power source to apply voltage to the chucking electrode is provided so that the object is chucked. The chucking surface has concaves of which openings are shut by the chucked object. A heat-exchange gas introduction system that introduces heat-exchange gas into the concaves is provided. The concaves include a heat-exchange concave for promoting heat-exchange between the stage and the object under increased pressure, and a gas-diffusion concave for making the introduced gas diffuse to the heat-exchange concave. The gas-diffusion concave is deeper than the heat-exchange concave. This invention also presents a surface processing apparatus, comprising a process chamber in which a surface of an object is processed, and the electro-static chucking mechanism of the same composition.

Abstract translation: 本发明提供一种用于将电子静电夹持在夹持表面上的ESC机构，包括具有表面为夹持表面的介质块的台和设置在该介质块中的夹持电极。 温度控制器设置有用于控制物体的温度的台。 提供用于向夹持电极施加电压的夹持电源，以便夹持该物体。 卡盘表面具有通过夹持物体关闭开口的凹陷。 提供了将热交换气体引入凹部的热交换气体导入系统。 凹部包括用于在增压下促进台与物体之间的热交换的热交换凹部，以及用于使引入的气体扩散到热交换凹部的气体扩散凹部。 气体扩散凹部比热交换凹部深。 本发明还提供了一种表面处理装置，其包括处理物体的表面的处理室和相同组成的静电夹持机构。