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1.发明授权Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition 有权用于硬掩模组合物和硬掩模组合物的单体，包括使用硬掩模组合物形成图案的单体和方法公开(公告)号：US09284245B2
公开(公告)日：2016-03-15
申请号：US14083598
申请日：2013-11-19
Applicant: Sung-Jae Lee , Hwan-Sung Cheon , Youn-Jin Cho , Chul-Ho Lee , Chung-Heon Lee
Inventor： Sung-Jae Lee , Hwan-Sung Cheon , Youn-Jin Cho , Chul-Ho Lee , Chung-Heon Lee
CPC classification number: C07C33/26 , C07C43/23 , G03F7/0752 , G03F7/09 , G03F7/40
Abstract: A monomer for a hardmask composition represented by the following Chemical Formula 1,
Abstract translation: 用于由以下化学式1表示的硬掩模组合物的单体，
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2.发明申请MONOMER FOR HARDMASK COMPOSITION AND HARDMASK COMPOSITION INCLUDING THE MONOMER AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION 审中-公开HARDMASK组合物和HARDMASK组合物的单体包括单体和使用HARDMASK组合物形成图案的方法公开(公告)号：US20150001178A1
公开(公告)日：2015-01-01
申请号：US14258489
申请日：2014-04-22
Applicant: Hyun-Ji SONG , Yun-Jun KIM , Go-Un KIM , Young-Min KIM , Hea-Jung KIM , Joon-Young MOON , Yo-Choul PARK , Yu-Shin PARK , You-Jung PARK , Seung-Wook SHIN , Yong-Woon YOON , Chung-Heon LEE , Yoo-Jeong CHOI , Seung-Hee HONG
Inventor： Hyun-Ji SONG , Yun-Jun KIM , Go-Un KIM , Young-Min KIM , Hea-Jung KIM , Joon-Young MOON , Yo-Choul PARK , Yu-Shin PARK , You-Jung PARK , Seung-Wook SHIN , Yong-Woon YOON , Chung-Heon LEE , Yoo-Jeong CHOI , Seung-Hee HONG
IPC: G03F1/00 , C07D311/58 , C07D333/50 , C07C39/17 , C07D333/16 , G03F7/40 , C07C39/225 , C07C255/53 , C07C22/04 , G03F7/16 , G03F7/20 , C07D215/14 , C07C35/21
CPC classification number: G03F7/40 , C07C22/04 , C07C39/12 , C07C39/225 , C07C217/58 , C07C255/53 , C07C323/19 , C07C2601/14 , C07C2603/50 , C07C2603/52 , C07C2603/54 , C07D215/14 , C07D311/58 , C07D333/16 , C07D333/50 , G03F7/09 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/30 , G03F7/36 , G03F7/38
Abstract: A monomer for a hardmask composition is represented by the following Chemical Formula 1,
Abstract translation: 用于硬掩模组合物的单体由以下化学式1表示，
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3.发明申请HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNS AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE PATTERNS 有权HARDMASK组合物和形成图案的方法和包括图案的半导体集成电路装置公开(公告)号：US20140183701A1
公开(公告)日：2014-07-03
申请号：US14037722
申请日：2013-09-26
Applicant: Yoo-Jeong CHOI , Yun-Jun KIM , Joon-Young MOON , Bum-Jin LEE , Chung-Heon LEE , Youn-Jin CHO
Inventor： Yoo-Jeong CHOI , Yun-Jun KIM , Joon-Young MOON , Bum-Jin LEE , Chung-Heon LEE , Youn-Jin CHO
IPC: H01L21/308 , H01L21/311 , H01L23/00 , G03F7/11
CPC classification number: H01L23/564 , H01L21/02118 , H01L21/02282 , H01L21/0271 , H01L21/0332 , H01L2924/0002 , H01L2924/00
Abstract: A hardmask composition includes a monomer represented by the following Chemical Formula 1 and an aromatic ring-containing polymer,
Abstract translation: 硬掩模组合物包括由以下化学式1表示的单体和含芳环的聚合物，
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4.发明申请METHOD FOR FORMING A DUAL DAMASCENE STRUCTURE OF A SEMICONDUCTOR DEVICE, AND A SEMICONDUCTOR DEVICE THEREWITH 有权形成半导体器件的双重结构结构的方法及其半导体器件公开(公告)号：US20140175669A1
公开(公告)日：2014-06-26
申请号：US14072881
申请日：2013-11-06
Applicant: Joon-Young MOON , Youn-Jin CHO , Sung-Jae LEE , You-Jung PARK , Yong-Woon YOON , Chul-Ho LEE , Chung-Heon LEE
Inventor： Joon-Young MOON , Youn-Jin CHO , Sung-Jae LEE , You-Jung PARK , Yong-Woon YOON , Chul-Ho LEE , Chung-Heon LEE
IPC: H01L21/768 , H01L23/535
CPC classification number: H01L21/76804 , H01L21/76808 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
Abstract: Forming a dual damascene structure includes forming a first insulation layer and a second insulation layer, forming a resist mask, forming a via hole down to a lower end of the first insulation layer, forming a hardmask layer in the via hole and on the second insulation layer using a spin-coating method, forming a resist mask, forming a first trench hole down to a lower end of the second insulation layer, respectively removing a part of the hardmask layer in the via hole and a part of the hardmask layer on the second insulation layer, forming a second trench hole by removing a part of the first insulation layer between a top corner of the hardmask layer remaining in the via hole and a bottom corner of the first trench hole, removing the hardmask layer, and filling the via hole and the second trench hole with a conductive material.
Abstract translation: 形成双镶嵌结构包括形成第一绝缘层和第二绝缘层，形成抗蚀剂掩模，在第一绝缘层的下端形成通孔，在通孔中和第二绝缘层上形成硬掩模层 层，形成抗蚀剂掩模，在第二绝缘层的下端形成第一沟槽，分别去除通孔中的硬掩模层的一部分和硬掩模层的一部分， 第二绝缘层，通过去除残留在通孔中的硬掩模层的顶角之间的第一绝缘层的一部分和第一沟槽的底角，形成第二沟槽，去除硬掩模层，并且填充通孔 孔和具有导电材料的第二沟槽孔。
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5.发明授权Hard mask composition, method of forming a pattern, and semiconductor integrated circuit device including the pattern 有权硬掩模组合物，形成图案的方法和包括图案的半导体集成电路器件公开(公告)号：US08741540B2
公开(公告)日：2014-06-03
申请号：US13241389
申请日：2011-09-23
Applicant: Min-Soo Kim , Hwan-Sung Cheon , Jee-Yun Song , Young-Min Kim , Cheol-Ho Lee , Chung-Heon Lee
Inventor： Min-Soo Kim , Hwan-Sung Cheon , Jee-Yun Song , Young-Min Kim , Cheol-Ho Lee , Chung-Heon Lee
CPC classification number: G03F7/094
Abstract: A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and an aromatic ring-containing compound, the aromatic ring-containing compound including at least one of a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2:
Abstract translation: 硬掩模组合物，形成图案的方法和半导体集成电路器件，所述硬掩模组合物包括溶剂; 和含芳香环的化合物，所述含芳香环的化合物包括由以下化学式1表示的部分和由以下化学式2表示的部分中的至少一个：
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Patent Agency Ranking
公开(公告)号：US09665003B2
公开(公告)日：2017-05-30
申请号：US14263323
申请日：2014-04-28
Applicant: Yoo-Jeong Choi , Yun-Jun Kim , Go-Un Kim , Young-Min Kim , Hea-Jung Kim , Joon-Young Moon , Yo-Choul Park , Yu-Shin Park , You-Jung Park , Hyun-Ji Song , Seung-Wook Shin , Yong-Woon Yoon , Chung-Heon Lee , Seung-Hee Hong
Inventor： Yoo-Jeong Choi , Yun-Jun Kim , Go-Un Kim , Young-Min Kim , Hea-Jung Kim , Joon-Young Moon , Yo-Choul Park , Yu-Shin Park , You-Jung Park , Hyun-Ji Song , Seung-Wook Shin , Yong-Woon Yoon , Chung-Heon Lee , Seung-Hee Hong
CPC classification number: G03F7/094 , G03F7/09 , G03F7/091 , G03F7/11 , G03F7/162 , G03F7/30 , G03F7/36 , G03F7/40
Abstract: A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent,
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7.发明授权Monomer for hardmask composition, hardmask composition including monomer, and pattern forming method using hardmask composition 有权用于硬掩模组合物的单体，包括单体的硬掩模组合，以及使用硬掩模组合物的图案形成方法公开(公告)号：US09359276B2
公开(公告)日：2016-06-07
申请号：US14365751
申请日：2012-11-21
Applicant: Yoo-Jeong Choi , Hyo-Young Kwon , Youn-Jin Cho , Yun-Jun Kim , Young-Min Kim , Yong-Woon Yoon , Chung-Heon Lee
Inventor： Yoo-Jeong Choi , Hyo-Young Kwon , Youn-Jin Cho , Yun-Jun Kim , Young-Min Kim , Yong-Woon Yoon , Chung-Heon Lee
IPC: C07C39/14 , C07C39/12 , G03F7/11 , G03F7/09 , G03F7/004 , G03F7/075 , G03F7/30 , G03F7/36 , B05D1/00 , B05D3/00 , B05D3/02 , B05D3/06 , C09D173/00
CPC classification number: C07C39/14 , B05D1/005 , B05D3/007 , B05D3/0254 , B05D3/06 , C07C39/12 , C07C2603/50 , C07C2603/54 , C09D173/00 , G03F7/004 , G03F7/0752 , G03F7/094 , G03F7/11 , G03F7/30 , G03F7/36
Abstract: Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern.
Abstract translation: 公开了由化学式1表示的硬掩模组合物的单体，包含单体的硬掩模组合物和形成图案的方法。
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8.发明申请MONOMER FOR HARDMASK COMPOSITION AND HARDMASK COMPOSITION INCLUDING THE MONOMER AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION 有权HARDMASK组合物和HARDMASK组合物的单体包括单体和使用HARDMASK组合物形成图案的方法公开(公告)号：US20140186777A1
公开(公告)日：2014-07-03
申请号：US14083598
申请日：2013-11-19
Applicant: Sung-Jae LEE , Hwan-Sung CHEON , Youn-Jin CHO , Chul-Ho LEE , Chung-Heon LEE
Inventor： Sung-Jae LEE , Hwan-Sung CHEON , Youn-Jin CHO , Chul-Ho LEE , Chung-Heon LEE
CPC classification number: C07C33/26 , C07C43/23 , G03F7/0752 , G03F7/09 , G03F7/40
Abstract: A monomer for a hardmask composition represented by the following Chemical Formula 1,
Abstract translation: 用于由以下化学式1表示的硬掩模组合物的单体，
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9.发明申请HARD MASK COMPOSITION, METHOD OF FORMING A PATTERN, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE PATTERN 有权硬掩模组合物，形成图案的方法和包括图案的半导体集成电路装置公开(公告)号：US20120168894A1
公开(公告)日：2012-07-05
申请号：US13241389
申请日：2011-09-23
Applicant: Min-Soo Kim , Hwan-Sung Cheon , Jee-Yun Song , Young-Min Kim , Cheol-Ho Lee , Chung-Heon Lee
Inventor： Min-Soo Kim , Hwan-Sung Cheon , Jee-Yun Song , Young-Min Kim , Cheol-Ho Lee , Chung-Heon Lee
IPC: H01L21/306 , H01L27/02 , C09D161/06
CPC classification number: G03F7/094
Abstract: A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and an aromatic ring-containing compound, the aromatic ring-containing compound including at least one of a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2:
Abstract translation: 硬掩模组合物，形成图案的方法和半导体集成电路器件，所述硬掩模组合物包括溶剂; 和含芳香环的化合物，所述含芳香环的化合物包括由以下化学式1表示的部分和由以下化学式2表示的部分中的至少一个：
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10.发明授权Method for forming a dual damascene structure of a semiconductor device, and a semiconductor device therewith 有权用于形成半导体器件的双镶嵌结构的方法及其半导体器件公开(公告)号：US08900997B2
公开(公告)日：2014-12-02
申请号：US14072881
申请日：2013-11-06
Applicant: Joon-Young Moon , Youn-Jin Cho , Sung-Jae Lee , You-Jung Park , Yong-Woon Yoon , Chul-Ho Lee , Chung-Heon Lee
Inventor： Joon-Young Moon , Youn-Jin Cho , Sung-Jae Lee , You-Jung Park , Yong-Woon Yoon , Chul-Ho Lee , Chung-Heon Lee
IPC: H01L21/44 , H01L23/522 , H01L23/532 , H01L21/768
CPC classification number: H01L21/76804 , H01L21/76808 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
Abstract: Forming a dual damascene structure includes forming a first insulation layer and a second insulation layer, forming a resist mask, forming a via hole down to a lower end of the first insulation layer, forming a hardmask layer in the via hole and on the second insulation layer using a spin-coating method, forming a resist mask, forming a first trench hole down to a lower end of the second insulation layer, respectively removing a part of the hardmask layer in the via hole and a part of the hardmask layer on the second insulation layer, forming a second trench hole by removing a part of the first insulation layer between a top corner of the hardmask layer remaining in the via hole and a bottom corner of the first trench hole, removing the hardmask layer, and filling the via hole and the second trench hole with a conductive material.
Abstract translation: 形成双镶嵌结构包括形成第一绝缘层和第二绝缘层，形成抗蚀剂掩模，在第一绝缘层的下端形成通孔，在通孔中和第二绝缘层上形成硬掩模层 层，形成抗蚀剂掩模，在第二绝缘层的下端形成第一沟槽，分别去除通孔中的硬掩模层的一部分和硬掩模层的一部分， 第二绝缘层，通过去除残留在通孔中的硬掩模层的顶角之间的第一绝缘层的一部分和第一沟槽的底角，形成第二沟槽，去除硬掩模层，并且填充通孔 孔和具有导电材料的第二沟槽孔。
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