- 专利标题： High voltage semiconductor device with reduced peak electric field in active and termination areas of the device
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申请号： US15509517申请日： 2015-09-17
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公开(公告)号： US10157979B2公开(公告)日： 2018-12-18
- 发明人: Peter Ward , Neophytos Lophitis , Tanya Trajkovic , Florin Udrea
- 申请人： Anvil Semiconductors Limited
- 申请人地址： GB Coventry
- 专利权人： Anvil Semiconductors Limited
- 当前专利权人： Anvil Semiconductors Limited
- 当前专利权人地址： GB Coventry
- 代理机构： Tucker Ellis LLP
- 优先权： GB1416403.2 20140917
- 国际申请： PCT/GB2015/052689 WO 20150917
- 国际公布： WO2016/042330 WO 20160324
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/786 ; H01L29/861 ; H01L29/872 ; H01L29/10 ; H01L29/16 ; H01L29/20 ; H01L29/40 ; H01L21/266 ; H01L27/112 ; H01L29/267 ; H01L29/36 ; H01L29/08 ; H01L29/47 ; H01L29/739 ; H01L29/778 ; H01L29/868
摘要：
We disclose a high voltage semiconductor device comprising a semiconductor substrate of a second conductivity type; a semiconductor drift region of the second conductivity type disposed over the semiconductor substrate, the semiconductor substrate region having higher doping concentration than the drift region; a semiconductor region of a first conductivity type, opposite to the second conductivity type, formed on the surface of the device and within the semiconductor drift region, the semiconductor region having higher doping concentration than the drift region; and a lateral extension of the first conductivity type extending laterally from the semiconductor region into the drift region, the lateral extension being spaced from a surface of the device.
公开/授权文献
- US20170243937A1 HIGH VOLTAGE SEMICONDUCTOR DEVICES 公开/授权日：2017-08-24
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