公开(公告)号：US12132133B2

公开(公告)日：2024-10-29

申请号：US18338631

申请日：2023-06-21

申请人： Samsung Electronics Co., Ltd.

发明人： Sanghyun Jo ,  Jaeho Lee ,  Haeryong Kim ,  Hyeonjin Shin

IPC分类号： H01L29/66 ,  G01S7/481 ,  G01S17/931 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/101 ,  H01L31/107 ,  H01S5/0687 ,  H10K39/32 ,  G05D1/00 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312

CPC分类号： H01L31/1075 ,  G01S7/4816 ,  G01S7/4817 ,  G01S17/931 ,  H01L27/14643 ,  H01L27/14647 ,  H01L31/02027 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/032 ,  H01L31/035209 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1013 ,  H01S5/0687 ,  H10K39/32 ,  G05D1/024 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0324 ,  H01L2031/0344 ,  H01L31/035218

摘要： A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US20240332446A1

公开(公告)日：2024-10-03

申请号：US18740143

申请日：2024-06-11

申请人： mPower Technology, Inc.

发明人： Murat Okandan ,  Kaveh Rouhani

IPC分类号： H01L31/18 ,  H01L31/032 ,  H01L31/042

CPC分类号： H01L31/1864 ,  H01L31/032 ,  H01L31/042

摘要： Method and apparatus for annealing micro-scale or macro solar cells that can contain lithium. Heaters, a current that is applied in forward or reverse direction, or open-circuiting the cells are used optionally with a laser or other light source to increase the temperature of the cells to perform periodic anneals to recover energy conversion efficiency lost due to environmental conditions such as radiation damage and maintain desired operational conditions. While a small amount of energy is used for heating up the small thermal mass of the micro-cells and macro cells to the desired annealing temperature, much larger amounts of additional energy is harvested with the improved efficiency of the cells. Maintaining a desired temperature for operation of cells takes very little energy owing to the small thermal mass of the cells and controlled thermal conduction of the materials in contact with the cells.

公开(公告)号：US20240332323A1

公开(公告)日：2024-10-03

申请号：US18610629

申请日：2024-03-20

申请人： TDK Corporation

发明人： Takekazu YAMANE ,  Tetsuya SHIBATA ,  Takeshi NOJIRI ,  Weihao ZHANG ,  Hideaki FUKUZAWA

IPC分类号： H01L27/144 ,  H01L31/02 ,  H01L31/032

CPC分类号： H01L27/1443 ,  H01L31/02005 ,  H01L31/032

摘要： An optical detection device includes first photoelectric conversion element that outputs first output when first photoelectric conversion element is irradiated with light pulse, and second photoelectric conversion element that outputs second output when second photoelectric conversion element is irradiated with light pulse. The optical detection device is configured to combine first signal caused by first output and second signal caused by second output when first photoelectric conversion element and second photoelectric conversion element are irradiated with same light pulse each other, in a state where first condition and second condition are satisfied. The first condition is condition that time position of peak of first signal is different from time position of peak of second signal. The second condition is condition that sign of amount of change until the first signal reaches the peak is different from a sign of the amount of change until the second signal reaches the peak.

公开(公告)号：US20240322057A1

公开(公告)日：2024-09-26

申请号：US18680927

申请日：2024-05-31

申请人： First Solar, Inc.

发明人： Shuping Lin ,  Raffael Reineker ,  Hongqing Shan ,  Joachim Leopold Ludwig Müller ,  Bernd Sprecher ,  Kay Orgassa

IPC分类号： H01L31/0463 ,  H01L31/0224 ,  H01L31/032

CPC分类号： H01L31/0463 ,  H01L31/022425 ,  H01L31/0322

摘要： A method of patterning a thin-film photovoltaic layer stack includes the steps of providing a continuous layer stack comprising a planar substrate, a first electrode layer on the substrate and a photovoltaic layer on the first electrode layer, immersing the layer stack into an electrically conductive solution, applying a bias voltage between the electrolyte solution and the first electrode layer and converting a first material or a first material composition provided in at least a first portion of the layer stack into a first reaction product by an electrochemical reaction, wherein the first reaction product has an electrical conductivity that is lower than an electrical conductivity of the first material or first material composition, or removing a first material or a first material composition provided in at least a first portion of the layer stack by an electrochemical reaction.

公开(公告)号：US20240271324A1

公开(公告)日：2024-08-15

申请号：US18569351

申请日：2022-06-15

申请人： The Board of Trustees of the Leland Stanford Junior University

发明人： Hemamala Indivari KARUNADASA ,  Abraham SALDIVAR ,  Michael AUBREY

IPC分类号： C30B29/68 ,  C30B7/14 ,  C30B29/54 ,  H01L31/0216 ,  H01L31/032 ,  H01L31/18

CPC分类号： C30B29/68 ,  C30B7/14 ,  C30B29/54 ,  H01L31/0216 ,  H01L31/032 ,  H01L31/18

摘要： Layered or 2D halide perovskites form in solution through the templating effects of organoammnonium groups. The use of organic groups with two different functionalities allows for the formation of a perovskite/non-perovskite heterostructure in aqueous or organic solution. A first functional group templates the perovskite and a second functional group templates a new 2D or ID inorganic non-perovskite lattice between the perovskite sheets. The perovskite and the intergrowth may be separated from each other by organic molecules, or they may be in contact with each other (e.g., by sharing an atom).

公开(公告)号：US20240120922A1

公开(公告)日：2024-04-11

申请号：US18544309

申请日：2023-12-18

申请人： Schottky LSI, Inc.

发明人： Augustine Wei-Chun Chang ,  Pierre Dermy

IPC分类号： H03K19/0956 ,  H01L25/065 ,  H01L27/02 ,  H01L27/105 ,  H01L27/118 ,  H01L31/032 ,  H01L31/0376 ,  H01L31/072 ,  H01L31/074 ,  H03K19/017 ,  H03K19/0948 ,  H03K19/17728 ,  H10B12/00 ,  H10B20/00 ,  H10B41/40 ,  H10B41/49

CPC分类号： H03K19/0956 ,  H01L25/065 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/11807 ,  H01L28/00 ,  H01L31/032 ,  H01L31/0376 ,  H01L31/072 ,  H01L31/074 ,  H03K19/01707 ,  H03K19/0948 ,  H03K19/17728 ,  H10B12/50 ,  H10B20/00 ,  H10B20/38 ,  H10B20/60 ,  H10B20/65 ,  H10B41/40 ,  H10B41/49 ,  H01L28/20 ,  H01L2924/0002 ,  Y02E10/50

摘要： Integrated circuits described herein implement multiplexer (MUX) gate system. An integrated circuit includes a plurality of inputs coupled with a first stage of the integrated circuit. The first stage includes a plurality of first Schottky diodes and a plurality of N-type transistors. Each input is coupled with a respective first Schottky diode and N-type transistor. The integrated circuit also includes a plurality of outputs of the first stage coupled with a second stage of the integrated circuit. The second stage includes a plurality of second Schottky diodes and a plurality of P-type transistors. Each output is coupled with a respective second Schottky diode and P-type transistor. The integrated circuit further includes a plurality of outputs of the second stage coupled with a set of transistors including a P-type transistor and an N-type transistor, and an output of the set of transistors coupled with an output of the MUX gate system.

公开(公告)号：US20240120431A1

公开(公告)日：2024-04-11

申请号：US18276887

申请日：2021-12-30

申请人： SOUTH CHINA UNIVERSITY OF TECHNOLOGY

发明人： Guoqiang LI ,  Sheng CHEN ,  Wenliang WANG ,  Jixing CHAI

IPC分类号： H01L31/18 ,  C30B25/04 ,  C30B25/18 ,  C30B29/46 ,  H01L31/032

CPC分类号： H01L31/18 ,  C30B25/04 ,  C30B25/186 ,  C30B29/46 ,  H01L31/0324

摘要： Clean version of the Abstract A preparation method for growing a germanium sulfide (GeS2) single-crystal thin film on a SiO2 substrate includes: cleaning a surface of a substrate with acetone, ethanol and deionized water, where the substrate is a Si/SiO2 substrate or a SiO2 glass substrate; photoetching the substrate, spin-coating a photoresist, and performing photoetching and dry etching or wet etching to obtain a groove pattern; depositing a germanium (Ge)-crystal layer in the groove pattern of the substrate to obtain a treated substrate; and putting the treated substrate into a chemical vapor deposition (CVD) device for growth, a growth source being high-purity sulfur (S) powder and high-purity Ge powder, thereby obtaining a GeS2 single-crystal thin film on the SiO2 substrate. The preparation method can grow GeS2 single crystals on the SiO2 substrate. The GeS2 single crystals have a high crystalline quality and a small surface roughness.

公开(公告)号：US11942490B2

公开(公告)日：2024-03-26

申请号：US17178791

申请日：2021-02-18

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

发明人： Kuniyuki Kakushima ,  Akito Sasaki ,  Atsuya Sasaki ,  Hideaki Hirabayashi

IPC分类号： H01L27/146 ,  G01T1/24 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/032

CPC分类号： H01L27/14607 ,  G01T1/241 ,  H01L27/14659 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/03044 ,  H01L31/0312 ,  H01L31/032

摘要： A photon counting radiation detector includes a cell structure including a substrate and an epitaxial layer provided on the substrate, radiation being incident on the epitaxial layer; an inclination θ of the substrate being set in a predetermined range, where tsub is a thickness of the substrate, tepi is a thickness of the epitaxial layer, L is a length of the substrate, and the inclination θ is an inclination of the substrate with respect to an incident direction of the radiation. The epitaxial layer is preferably one type selected from SiC, Ga2O3, GaAs, GaN, diamond, and CdTe. Such a photon counting radiation detector is preferably a direct converting type.

公开(公告)号：US11940577B1

公开(公告)日：2024-03-26

申请号：US15788646

申请日：2017-10-19

申请人： Radiation Monitoring Devices, Inc.

发明人： Kanai S. Shah ,  Leonard Cirignano ,  Hadong Kim

IPC分类号： G01T1/20 ,  G01T1/16 ,  G01T1/22 ,  G01T1/24 ,  G01T3/00 ,  G01T3/06 ,  H01L31/032 ,  H01L31/08

CPC分类号： G01T1/241 ,  G01T1/16 ,  G01T1/2006 ,  G01T1/22 ,  G01T1/24 ,  G01T3/00 ,  G01T3/008 ,  G01T3/06 ,  H01L31/032 ,  H01L31/085

摘要： Systems and methods for detecting radiation are generally described. The radiation detector comprises at least one semiconductor material, such as a thallium halide, that provides an electrical signal and optical signal upon exposure to a source of radiation. The electrical signal and optical signal may both be measured to detect the radiation.

公开(公告)号：US11935974B2

公开(公告)日：2024-03-19

申请号：US17293403

申请日：2019-05-23

申请人： Ibaraki University ,  JX METALS CORPORATION

发明人： Haruhiko Udono ,  Toshiaki Asahi

IPC分类号： H01L31/032 ,  C30B29/52 ,  H01L31/18

CPC分类号： H01L31/032 ,  C30B29/52 ,  H01L31/18

摘要： Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula:

Mg2Sn·Zna  Composition formula:

in which, a is a Zn content of from 0.05 to 1 at % relative to Mg2Sn.