公开(公告)号：US11955251B2

公开(公告)日：2024-04-09

申请号：US17233845

申请日：2021-04-19

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Takashi Sakurada ,  Tomohiro Kawase

IPC分类号： C30B29/42 ,  C22F1/16 ,  C30B11/00 ,  C30B33/00 ,  C30B33/02 ,  H01B1/02

CPC分类号： H01B1/02 ,  C22F1/16 ,  C30B11/00 ,  C30B29/42 ,  C30B33/00 ,  C30B33/02 ,  Y10T428/24355

摘要： An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm−3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm−2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10−2 cm2 or at least 1×10−3 cm2.

公开(公告)号：US11913356B2

公开(公告)日：2024-02-27

申请号：US17545415

申请日：2021-12-08

申请人： PRATT & WHITNEY CANADA CORP.

发明人： Chao Zhang ,  Robert Huszar ,  Othmane Leghzaouni

IPC分类号： F01D5/28 ,  C30B11/02 ,  C30B29/52 ,  F01D5/14 ,  C30B11/00 ,  C30B11/14

CPC分类号： F01D5/28 ,  C30B11/02 ,  C30B29/52 ,  F01D5/147 ,  F05D2230/50 ,  F05D2250/232 ,  F05D2300/607

摘要： A single-crystal turbine blade and a method of making such single-crystal turbine blade are disclosed. During manufacturing, a secondary crystallographic orientation of the material of the single-crystal turbine blade is controlled based on a parameter of a root fillet between an airfoil of the single-crystal turbine blade and a platform of the single-crystal turbine blade. The parameter can be a location of peak stress in the root fillet expected during use of the turbine blade.

公开(公告)号：US20230399768A1

公开(公告)日：2023-12-14

申请号：US18250262

申请日：2021-02-08

申请人： HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.

发明人： Hongji QI ,  Duanyang CHEN

IPC分类号： C30B29/10 ,  C30B11/14 ,  C30B11/00 ,  G16C20/30 ,  G16C20/70

CPC分类号： C30B29/10 ,  C30B11/14 ,  C30B11/006 ,  G16C20/30 ,  G16C20/70

摘要： A preparation method of conductive gallium oxide based on deep learning and heat exchange method. The prediction method includes: obtaining a preparation data of the conductive gallium oxide single crystal, the preparation data includes a seed crystal data, an environmental data, a control data, and a raw material data, the control data comprises a seed crystal coolant flow rate, and the raw material data includes a doping type data and a conductive doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the conductive gallium oxide single crystal through the trained neural network model, the predicted property data includes a predicted carrier concentration. Therefore, the conductive gallium oxide with a preset carrier concentration is obtained.

公开(公告)号：US11802350B2

公开(公告)日：2023-10-31

申请号：US17146224

申请日：2021-01-11

申请人： INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

发明人： Woo Young Shim ,  Sang jin Choi ,  Hyesoo Kim

IPC分类号： C30B29/42 ,  C30B11/00 ,  C30B29/68 ,  H01L21/02 ,  H01L29/06 ,  H01L29/20 ,  C01G28/00 ,  C30B33/08

CPC分类号： C30B29/42 ,  C01G28/002 ,  C30B11/003 ,  C30B29/68 ,  C30B33/08 ,  H01L21/02546 ,  H01L21/02623 ,  H01L29/0665 ,  H01L29/20 ,  C01P2002/02 ,  C01P2002/72 ,  C01P2002/76

摘要： The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.

公开(公告)号：US11730857B2

公开(公告)日：2023-08-22

申请号：US17195997

申请日：2021-03-09

申请人： University of Cincinnati

发明人： Vesselin N. Shanov ,  Vibhor Chaswal ,  Pravahan Salunke ,  Madhura Joshi ,  Guangqi Zhang ,  Mark J. Schulz ,  Sergey N. Yarmolenko ,  Doug Nienaber

IPC分类号： C30B11/00 ,  C30B15/00 ,  A61L27/04 ,  A61L27/50 ,  A61L31/02 ,  A61L31/14 ,  A61B17/80 ,  A61B17/86 ,  C30B29/02 ,  C30B13/00 ,  A61L27/58 ,  C30B25/00 ,  C30B23/00 ,  A61F2/30 ,  C25D11/30 ,  C30B11/02 ,  C30B33/00 ,  A61B17/00 ,  A61F2/08

CPC分类号： A61L27/047 ,  A61B17/80 ,  A61B17/86 ,  A61F2/3099 ,  A61L27/58 ,  A61L31/02 ,  A61L31/022 ,  A61L31/148 ,  C25D11/30 ,  C30B11/00 ,  C30B11/02 ,  C30B13/00 ,  C30B15/00 ,  C30B23/00 ,  C30B25/00 ,  C30B29/02 ,  C30B33/005 ,  A61B2017/00526 ,  A61F2002/0858

摘要： A biomedical implant (16, 18) is formed from magnesium (Mg) single crystal (10). The biomedical implant (16, 18) may be biodegradable. The biomedical implant (16, 18) may be post treated to control the mechanical properties and/or corrosion rate thereof said Mg single crystal (10) without changing the chemical composition thereof. A method of making a Mg single crystal (10) for biomedical applications includes filling a single crucible (12) with more than one chamber with polycrystalline Mg, melting at least a portion of said polycrystalline Mg, and forming more than one Mg single crystal (10) using directional solidification.

公开(公告)号：US20230212784A1

公开(公告)日：2023-07-06

申请号：US18117669

申请日：2023-03-06

申请人： AXT, Inc.

发明人： Morris Young ,  Weiguo Liu ,  Wen Wan Zhou ,  Sungnee George Chu ,  Wei Zhang

IPC分类号： C30B29/64 ,  C30B33/10 ,  C30B29/40 ,  C30B11/00 ,  C30B11/14 ,  H01L29/20

CPC分类号： C30B29/64 ,  C30B33/10 ,  C30B29/40 ,  C30B11/003 ,  C30B11/006 ,  C30B11/14 ,  C30B11/002 ,  H01L29/20

摘要： Methods and wafers for low etch pit density, low slip line density, and low strain indium phosphide are disclosed and may include an indium phosphide single crystal wafer having a diameter of 4 inches or greater, having a measured etch pit density of less than 500 cm−2, and having fewer than 5 dislocations or slip lines as measured by x-ray diffraction imaging. The wafer may have a measured etch pit density of 200 cm−2 or less, or 100 cm−2 or less, or 10 cm−2 or less. The wafer may have a diameter of 6 inches or greater. An area of the wafer with a measured etch pit density of zero may at least 80% of the total area of the surface. An area of the wafer with a measured etch pit density of zero may be at least 90% of the total area of the surface.

公开(公告)号：US11685860B2

公开(公告)日：2023-06-27

申请号：US17441920

申请日：2020-10-30

申请人： GRIREM ADVANCED MATERIALS CO., LTD. ,  GRIREM HI-TECH CO., LTD. ,  Rare Earth Functional Materials (Xiong 'an) Innovation Center Co., Ltd.

发明人： Jinqiu Yu ,  Liang Luo ,  Chengpeng Diao ,  Lei Cui ,  Hao Wu ,  Huaqiang He

IPC分类号： C30B11/00 ,  C09K11/77 ,  G01T1/36

CPC分类号： C09K11/7719 ,  C30B11/00 ,  G01T1/362

摘要： A rare earth halide scintillation material the chemical formula of the material being CeBr3+x, wherein 0.0001x0.1. The rare earth halide scintillation material has excellent scintillation properties including high light output, high energy resolution, and fast decay.

公开(公告)号：US11661671B2

公开(公告)日：2023-05-30

申请号：US16859168

申请日：2020-04-27

申请人： CRYSTAL SYSTEMS, LLC

发明人： Frederick Schmid ,  Cody Riopel ,  Hui Zhang

IPC分类号： C30B11/00 ,  C30B29/06 ,  C30B29/20

CPC分类号： C30B11/002 ,  C30B11/003 ,  C30B29/06 ,  C30B29/20 ,  Y10T117/1092

摘要： A method of producing a crystalline material is provided that may include providing a crystal growth apparatus comprising a chamber, a hot zone, and a muffle. The hot zone may be disposed within the chamber and include at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, the method may include providing a muffle that surrounds at least two sides of the crucible to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.

公开(公告)号：US20230160092A1

公开(公告)日：2023-05-25

申请号：US17884092

申请日：2022-08-09

申请人： Shanghai University

发明人： Zhongming Ren ,  Jiang Wang ,  Xingfu Ren ,  Zhenqiang Zhang ,  Xiaoxin Zhang ,  Xia Li ,  Tingsheng Tu ,  Baojun Wang

IPC分类号： C30B11/00 ,  C30B11/02 ,  C30B11/14

CPC分类号： C30B11/003 ,  C30B11/006 ,  C30B11/02 ,  C30B11/14

摘要： The present disclosure relates to the field of directional solidification, and in particular, to an apparatus, method, and process for directional solidification by liquid metal spraying enhanced cooling (LMSC). The process has the following beneficial effects: the apparatus of the present disclosure can regulate a solidification structure of a casting, refine a dendrite spacing, and reduce or avoid metallurgical defects, and can be used to prepare high-quality large-sized columnar/single crystal blades or other castings.

公开(公告)号：US20230130166A1

公开(公告)日：2023-04-27

申请号：US18049309

申请日：2022-10-25

申请人： Novel Crystal Technology, Inc.

发明人： Takuya IGARASHI ,  Yuki UEDA ,  Kimiyoshi KOSHI

IPC分类号： C30B11/00 ,  C30B35/00 ,  C30B29/16

摘要： A single crystal growth apparatus to grow a single crystal of a gallium oxide-based semiconductor. The apparatus includes a crucible that includes a seed crystal section to accommodate a seed crystal, and a growing crystal section which is located on the upper side of the seed crystal section and in which the single crystal is grown by crystallizing a raw material melt accommodated therein, a tubular susceptor surrounding the seed crystal section and also supporting the crucible from below, and a molybdenum disilicide heating element to melt a raw material in the growing crystal section to obtain the raw material melt. The susceptor includes a thick portion at a portion in a height direction that is thicker and has a shorter horizontal distance from the seed crystal section than other portions. The thick portion surrounds at least a portion of the seed crystal section in the height direction.