公开(公告)号：US11060167B2

公开(公告)日：2021-07-13

申请号：US16415751

申请日：2019-05-17

申请人： INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY ,  KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Woo Young Shim ,  Dong Won Chun ,  Hyesoo Kim ,  Jong Bum Won

IPC分类号： C22C1/04

摘要： The present invention relates to: layered iron arsenide (FeAs), which is more particularly layered FeAs, which, unlike the conventional bulk FeAs, has a two-dimensional (2D) crystal structure, has the ability to be easily exfoliated into nanosheets, and has superconductivity; a method of preparing the same; and a FeAs nanosheet exfoliated from the same.

公开(公告)号：US11802350B2

公开(公告)日：2023-10-31

申请号：US17146224

申请日：2021-01-11

申请人： INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

发明人： Woo Young Shim ,  Sang jin Choi ,  Hyesoo Kim

IPC分类号： C30B29/42 ,  C30B11/00 ,  C30B29/68 ,  H01L21/02 ,  H01L29/06 ,  H01L29/20 ,  C01G28/00 ,  C30B33/08

CPC分类号： C30B29/42 ,  C01G28/002 ,  C30B11/003 ,  C30B29/68 ,  C30B33/08 ,  H01L21/02546 ,  H01L21/02623 ,  H01L29/0665 ,  H01L29/20 ,  C01P2002/02 ,  C01P2002/72 ,  C01P2002/76

摘要： The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.

公开(公告)号：US10401974B2

公开(公告)日：2019-09-03

申请号：US15266175

申请日：2016-09-15

申请人： Industry-Academic Cooperation Foundation, Yonsei University

发明人： Woo Young Shim ,  Tae Yoon Lee ,  Kil Soo Lee ,  Jae Hong Lee ,  Dae Eun Kim

IPC分类号： G06F3/02 ,  G09G5/00 ,  G06F3/023 ,  G06F3/041 ,  G06F3/044 ,  G01L1/14 ,  G06F3/047 ,  H03K17/96 ,  G06F3/0488 ,  G06F3/0354

摘要： Provided is a highly sensitive pressure sensor that includes a lower substrate on which a first electrode having surface roughness is formed; an upper substrate on which a second electrode having surface roughness is formed; and a dielectric material stacked between the lower substrate and the upper substrate to be disposed between the first electrode and the second electrode.