公开(公告)号：US20020185735A1

公开(公告)日：2002-12-12

申请号：US10205118

申请日：2002-07-25

Applicant: International Business Machines Corporation

Inventor： Hiroyuki Sakurai ,  Keizo Sakurai

IPC: H01L021/44 ,  H01L021/443 ,  H01L023/488

CPC classification number: H01L24/11 ,  H01L24/45 ,  H01L2224/1134 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/014 ,  Y10T29/53204 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/48 ,  H01L2924/01008 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2224/0401

Abstract: A bump connection is formed by stacking at least two metallic balls of different kinds of metals on a conductor of an electronic component such as a semiconductor device. The bump connection is obtained by forming the metallic balls using metallic wires. An apparatus for forming the connection includes a support, capillary member for having a wire pass therethrough, a pair of clamps for clamping the wire, and a nulltorchnull (e.g., electrode, gas flame) which heats the tip of the wire, forming the ball. Successive balls can be formed by this apparatus atop the initially formed ball to provide a stacked configuration.

Abstract translation: 通过在诸如半导体器件的电子部件的导体上堆叠至少两种不同种类的金属的金属球来形成凸点连接。 通过使用金属线形成金属球来获得凸块连接。 一种用于形成连接的装置包括支撑件，用于穿过其中的导线的毛细管构件，用于夹紧线的一对夹具以及加热导线末端的“炬”（例如，电极，气体火焰），形成 球。 该装置可以在初始形成的球体上形成连续的球，以提供堆叠构型。

公开(公告)号：US20020064948A1

公开(公告)日：2002-05-30

申请号：US09804185

申请日：2001-03-13

Applicant: Tanaka Kikinzoku Kogyo K.K. (Japanese Corporatin)

Inventor： Masayuki Saito ,  Jun-ichi Taniuchi

IPC: H01L021/443 ,  C07F015/00 ,  C23C016/18

CPC classification number: H01L21/32051 ,  C07F17/02 ,  C23C16/18

Abstract: The present invention is a preparation method of the bis(alkylcyclopentadienyl)ruthenium by reacting a ruthenium compound, an alkylcyclopentadiene and a reducing agent, wherein the ruthenium compound, the alkylcyclopentadiene, and the reducing agent are reacted in the presence of a base. It is preferable that at least one of ammonia, amines, ammonium compounds, hydroxides, aniline, nitroaniline, aminophenol, aminodiphenyl, piperidine, Grignard reagents, alkali metals, alkoxides, phenyl lithium, methyl lithium, n-butyryl lithium, lithium aluminium hydride, and sodium amide is added as a base to the reaction system and the ruthenium compound, the alkylcyclopentadiene, and the reducing agent are reacted.

Abstract translation: 本发明是通过钌化合物，烷基环戊二烯和还原剂的反应制备双（烷基环戊二烯基）钌的方法，其中钌化合物，烷基环戊二烯和还原剂在碱的存在下反应。 优选氨，胺，铵化合物，氢氧化物，苯胺，硝基苯胺，氨基苯酚，氨基二苯基，哌啶，格氏试剂，碱金属，醇盐，苯基锂，甲基锂，正丁酰锂，氢化铝锂， 加入氨基钠作为反应体系的碱，使钌化合物，烷基环戊二烯和还原剂反应。

公开(公告)号：US20040209483A1

公开(公告)日：2004-10-21

申请号：US10487573

申请日：2004-02-18

Inventor： Hin Yiu Chung ,  Georg Roters

IPC: H01L021/443

CPC classification number: H01S5/18352 ,  H01L21/02178 ,  H01L21/02244 ,  H01L21/31683 ,  H01S5/18311

Abstract: The aim of the invention is to stop the progression of a lateral oxidation of a layer of a multi-layer substrate at a defined point. To achieve this aim, the invention provides a method for thermally treating a substrate that comprises several layers, especially a semiconductor wafer, according to which a substrate layer that is covered from above and from below is oxidized from the lateral edges thereof to the center in such a manner that a defined center portion is not oxidized. The inventive method comprises the following steps: heating the substrate in a process chamber to a defined treatment temperature; introducing a hydrogen-rich water vapor into the process chamber for a defined period of time; and introducing dry oxygen or an oxygen-rich water vapor into the process chamber once the defined period of time has expired. The hydrogen-rich water vapor can be introduced into the process chamber either before, during and/or after the substrate is heated.

Abstract translation: 本发明的目的是在限定的点处停止多层基底的层的横向氧化的进展。 为了实现该目的，本发明提供了一种用于热处理包括若干层，特别是半导体晶片的衬底的方法，根据该方法，从上方和下方覆盖的衬底层从其侧边缘被氧化成中心 定义的中心部分不被氧化的方式。 本发明的方法包括以下步骤：将处理室中的衬底加热到​​限定的处理温度; 在规定的时间内将富氢水蒸汽引入处理室; 并在规定的时间段到期后将干氧或富氧水蒸气引入处理室。 在加热基材之前，期间和/或之后，富氢水蒸汽可以被引入处理室。

公开(公告)号：US20020090745A1

公开(公告)日：2002-07-11

申请号：US09818962

申请日：2001-03-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY

Inventor： Hway-Chi Lin ,  Yu-Ku Lin ,  Wen-Pin Chang ,  Ying-Lang Wang

IPC: H01L021/66 ,  G03C005/00 ,  H01L021/302 ,  H01L021/461 ,  H01L021/311 ,  H01L021/027 ,  H01L021/365 ,  H01L021/443 ,  G03F007/00

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  H01L21/31053 ,  H01L21/76224

Abstract: A simple method for calculating the optimum amount of HDP deposited material that needs to be removed during CMP (without introducing dishing) is described. This method derives from our observation of a linear relationship between the amount of material that needs to be removed in order to achieve full planarization and a quantity called nullOD for CMP densitynull. The latter is defined as PAnull(100nullPS) where PA is the percentage of active area relative to the total wafer area and PS is the percentage of sub-areas relative to the total wafer area. The sub-areas are regions in the dielectric, above the active areas, that are etched out prior to CMP. Thus, once the materials have been characterized, the optimum CMP removal thickness is readily calculated for a wide range of different circuit implementations.

Abstract translation: 描述了一种用于计算在CMP期间需要去除的HDP沉积材料的最佳量的简单方法（不引入凹陷）。 该方法来源于我们观察到需要去除的材料的量之间的线性关系以实现完全平坦化，并且称为“用于CMP密度的OD”。 后者被定义为PAx（100-PS），其中PA是相对于总晶片面积的有效面积的百分比，PS是相对于总晶片面积的子区域的百分比。 子区域是在CMP之前被蚀刻出的有源区域之上的电介质区域。 因此，一旦材料被表征，就可以很容易地计算各种不同电路实现的最佳CMP去除厚度。

公开(公告)号：US20040192036A1

公开(公告)日：2004-09-30

申请号：US10808193

申请日：2004-03-24

Inventor： Kenichi Koyanagi ,  Hiroshi Sakuma

IPC: H01L021/4763 ,  H01L021/443

CPC classification number: H01L21/02271 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/3141 ,  H01L21/31637 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/90

Abstract: A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The method provides the metal oxide film having higher film properties with a higher throughput.

Abstract translation: 一种形成电容器绝缘膜的方法包括通过提供包括金属和不含氧的金属源沉积由金属制成的单原子膜并通过CVD技术沉积包括金属的金属氧化物膜的步骤。 该方法提供具有较高膜特性并具有较高生产量的金属氧化物膜。

公开(公告)号：US20040180542A1

公开(公告)日：2004-09-16

申请号：US10387773

申请日：2003-03-13

Inventor： Makoto Nagashima ,  Darrell Rinerson ,  Steve K. Hsia ,  Larry Matheny

IPC: H01L021/4763 ,  H01L021/443

CPC classification number: H01L21/02266 ,  H01L21/02175 ,  H01L21/02197 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/31691 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1641

Abstract: A method is disclosed to effectively achieve a low deposition temperature of CMO memory materials by facing target sputter deposition of the CMO memory material at relatively low temperatures that give an amorphous film. Subsequently, the CMO material can be melt and re-crystallized with a laser (laser annealing).

Abstract translation: 公开了一种通过在相对较低的温度下面对目标溅射沉积CMO记忆材料来产生非晶膜来有效地实现CMO记忆材料的低沉积温度的方法。 随后，可以用激光（激光退火）将CMO材料熔融并再结晶。