摘要:
A vacuum channel field effect transistor includes a first insulator on a p-type semiconductor substrate, a gate electrode on the first insulator, a second insulator on the gate electrode, a drain electrode on the second insulator, and an n+ impurity diffusion layer in the surface of the p-type semiconductor substrate, the n+ impurity diffusion layer being in contact with a side wall including side faces of the first insulator, the gate electrode, and the second insulator. Application of predetermined voltages to the n+ impurity diffusion layer, the gate electrode, and the drain electrode causes charge carriers in the n+ impurity diffusion layer to travel through a vacuum or air faced by the side wall to the drain electrode, which can increase the source-drain current.
摘要:
In an embodiment, a method includes forming a first diamond layer on a substrate and inducing a layer of graphene from the first diamond layer by heating the substrate and the first diamond layer. The method includes forming a second diamond layer on top of the layer of graphene and applying a mask to the second diamond layer. The mask includes a shape of a cathode, an anode, and one or more grids. The method further includes forming a two-dimensional cold cathode, a two-dimensional anode, and one or more two-dimensional grids by reactive-ion electron-beam etching. Each of the two-dimensional cold cathode, the two-dimensional anode, and the one or more two-dimensional grids includes a portion of the first diamond layer, the graphene layer, and the second diamond layer such that the graphene layer is positioned between the first diamond layer and the second diamond layer.
摘要:
Described is a lateral field emission device emitting electrons in parallel with respect to a substrate. Electron emission materials having a predetermined thickness are arranged in a direction with respect to the substrate on a supporting portion. An anode is disposed on a side portion of the substrate, the anode corresponding to the electron emission materials.
摘要:
A method of forming a nanowire structure is disclosed. The method comprises applying on a surface of carrier liquid a layer of a liquid composition which comprises a surfactant and a plurality of nanostructures each having a core and a shell, and heating at least one of the carrier liquid and the liquid composition to a temperature selected such that the nanostructures are segregated from the surfactant and assemble into a nanowire structure on the surface.
摘要:
An irregular shift of the electron beam caused by a spacer is compensated without making a design change of the spacer. A rear plate 1 in which an electron source substrate 9 disposed with plural electron-emitting devices 8 emitting the electron is fixed and a face plate 2 in which a metal back 11 for accelerating the electron is formed are disposed in opposition to each other, and these plates are supported by the spacers 3 with constant intervals, and the initial velocity vector of the electron emitted from the electron-emitting device 8 is different according to the distance from the spacer 3.
摘要:
In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.
摘要:
A plurality of field emission device cathodes each generate emission of electrons, which are then controlled and focused using various electrodes to produce an electron beam. Horizontal and vertical deflection techniques, similar to those used within a cathode ray tube, operate to scan the individual electron beams onto portions of a phosphor screen in order to generate images. The use of the plurality of field emission cathodes provides for a flatter screen depth than possible with a typical cathode ray tube.
摘要:
The present invention provide a lateral type electron-emitting device in which abnormal discharge near an electron-emitting region is suppressed, electron emission characteristics are stable, and electron emission efficiency is high. A method of manufacturing an electron-emitting device of the invention includes: a first step of preparing an electron-emitting electrode and a control electrode that are arranged on a surface of an insulating substrate; and a second step of covering the surface of the insulating substrate, which is located between the electron-emitting electrode and the control electrode, with a resistive film to connect the electron-emitting electrode and the control electrode. In the method of manufacturing an electron-emitting device, the resistive film is arranged to cover an end of a surface of the electron-emitting electrode opposed to the control electrode.
摘要:
An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
摘要:
In an electron-emitting device having a pair of electric conductors disposed on a substrate in opposed relationship with each other, and a pair of piled films composed chiefly of carbon and connected to the pair of electric conductors and disposed with a gap interposed therebetween, the piled films contain therein one or more kinds of elements selected from the group of lithium, potassium, sodium, calcium, strontium and barium within the range of 1 mol % to 5 mol % in terms of the percentage to carbon.