Vacuum channel field effect transistor, producing method thereof, and semiconductor device

    公开(公告)号:US11476074B2

    公开(公告)日:2022-10-18

    申请号:US17324923

    申请日:2021-05-19

    发明人: Yoshiyuki Ando

    摘要: A vacuum channel field effect transistor includes a first insulator on a p-type semiconductor substrate, a gate electrode on the first insulator, a second insulator on the gate electrode, a drain electrode on the second insulator, and an n+ impurity diffusion layer in the surface of the p-type semiconductor substrate, the n+ impurity diffusion layer being in contact with a side wall including side faces of the first insulator, the gate electrode, and the second insulator. Application of predetermined voltages to the n+ impurity diffusion layer, the gate electrode, and the drain electrode causes charge carriers in the n+ impurity diffusion layer to travel through a vacuum or air faced by the side wall to the drain electrode, which can increase the source-drain current.

    Two-dimensional graphene cold cathode, anode, and grid

    公开(公告)号:US10186394B2

    公开(公告)日:2019-01-22

    申请号:US15730212

    申请日:2017-10-11

    IPC分类号: H01J1/316 H01J1/304 H01J9/02

    摘要: In an embodiment, a method includes forming a first diamond layer on a substrate and inducing a layer of graphene from the first diamond layer by heating the substrate and the first diamond layer. The method includes forming a second diamond layer on top of the layer of graphene and applying a mask to the second diamond layer. The mask includes a shape of a cathode, an anode, and one or more grids. The method further includes forming a two-dimensional cold cathode, a two-dimensional anode, and one or more two-dimensional grids by reactive-ion electron-beam etching. Each of the two-dimensional cold cathode, the two-dimensional anode, and the one or more two-dimensional grids includes a portion of the first diamond layer, the graphene layer, and the second diamond layer such that the graphene layer is positioned between the first diamond layer and the second diamond layer.

    Lateral field emission device
    3.
    发明授权
    Lateral field emission device 有权
    侧面场发射装置

    公开(公告)号:US09099274B2

    公开(公告)日:2015-08-04

    申请号:US13978797

    申请日:2012-01-10

    摘要: Described is a lateral field emission device emitting electrons in parallel with respect to a substrate. Electron emission materials having a predetermined thickness are arranged in a direction with respect to the substrate on a supporting portion. An anode is disposed on a side portion of the substrate, the anode corresponding to the electron emission materials.

    摘要翻译: 描述了相对于衬底平行地发射电子的横向场发射器件。 具有预定厚度的电子发射材料在支撑部分上相对于衬底的方向布置。 阳极设置在基板的侧部,阳极对应于电子发射材料。

    Image display apparatus
    5.
    发明申请
    Image display apparatus 失效
    图像显示装置

    公开(公告)号:US20050264166A1

    公开(公告)日:2005-12-01

    申请号:US11139488

    申请日:2005-05-31

    申请人: Yoichi Ando

    发明人: Yoichi Ando

    摘要: An irregular shift of the electron beam caused by a spacer is compensated without making a design change of the spacer. A rear plate 1 in which an electron source substrate 9 disposed with plural electron-emitting devices 8 emitting the electron is fixed and a face plate 2 in which a metal back 11 for accelerating the electron is formed are disposed in opposition to each other, and these plates are supported by the spacers 3 with constant intervals, and the initial velocity vector of the electron emitted from the electron-emitting device 8 is different according to the distance from the spacer 3.

    摘要翻译: 由间隔物引起的电子束的不规则偏移被补偿,而不会使间隔物的设计变化。 设置有发射电子的多个电子发射器件8的电子源衬底9被固定的后板1和形成用于加速电子的金属背11的面板2彼此相对设置,并且 这些板由间隔件3以恒定的间隔支撑,并且从电子发射器件8发射的电子的初始速度矢量根据与间隔件3的距离而不同。

    Electron-emitting device, electron source, image display apparatus, and their manufacturing method
    6.
    发明申请
    Electron-emitting device, electron source, image display apparatus, and their manufacturing method 失效
    电子发射器件,电子源,图像显示装置及其制造方法

    公开(公告)号:US20050236965A1

    公开(公告)日:2005-10-27

    申请号:US11106636

    申请日:2005-04-15

    CPC分类号: H01J1/316 H01J9/027

    摘要: In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.

    摘要翻译: 在具有以一定间隔配置在基板上的一对电导体的电子发射器件中,一个电导体的顶部高于另一个导电体的顶部,以及从间隔区域延伸到在一个电导体 与衬底接触形成在衬底上。 通过不对称电子发射区域抑制由于带电粒子的碰撞引起的电子发射器件的劣化,提高了电子发射效率,并且实现了长寿命。

    Electron-emitting device, electron source, image display device and information display and reproduction apparatus using image display device, and method of manufacturing the same
    8.
    发明申请
    Electron-emitting device, electron source, image display device and information display and reproduction apparatus using image display device, and method of manufacturing the same 失效
    电子发射装置,电子源,图像显示装置和使用图像显示装置的信息显示和再现装置及其制造方法

    公开(公告)号:US20050200266A1

    公开(公告)日:2005-09-15

    申请号:US11061516

    申请日:2005-02-22

    申请人: Kazushi Nomura

    发明人: Kazushi Nomura

    摘要: The present invention provide a lateral type electron-emitting device in which abnormal discharge near an electron-emitting region is suppressed, electron emission characteristics are stable, and electron emission efficiency is high. A method of manufacturing an electron-emitting device of the invention includes: a first step of preparing an electron-emitting electrode and a control electrode that are arranged on a surface of an insulating substrate; and a second step of covering the surface of the insulating substrate, which is located between the electron-emitting electrode and the control electrode, with a resistive film to connect the electron-emitting electrode and the control electrode. In the method of manufacturing an electron-emitting device, the resistive film is arranged to cover an end of a surface of the electron-emitting electrode opposed to the control electrode.

    摘要翻译: 本发明提供一种横向型电子发射器件,其中电子发射区附近的异常放电被抑制,电子发射特性稳定,电子发射效率高。 制造本发明的电子发射器件的方法包括:制备布置在绝缘衬底的表面上的电子发射电极和控制电极的第一步骤; 以及利用电阻膜覆盖位于电子发射电极和控制电极之间的绝缘衬底的表面的第二步骤,以连接电子发射电极和控制电极。 在制造电子发射器件的方法中,电阻膜被布置成覆盖与控制电极相对的电子发射电极的表面的端部。