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    Method for producing synthetic diamond structures
    1.
    发明授权
    Method for producing synthetic diamond structures 失效
    生产合成金刚石结构的方法

    公开(公告)号：US5310512A

    公开(公告)日：1994-05-10

    申请号：US614313

    申请日：1990-11-15

    Applicant: Louis K. Bigelow

    Inventor： Louis K. Bigelow

    IPC: C30B28/00 ,  C23C16/01 ,  C23C16/26 ,  C23C16/27 ,  C30B29/04 ,  B28B1/02 ,  B28B7/30

    CPC classification number: C23C16/276 ,  C23C16/01

    Abstract: Method and apparatus for producing a non-planar synthetic diamond structure of predetermined shape. A non-planar mandrel surface of the predetermined shape is provided and the mandrel surface is coated with a release substance. Synthetic diamond is deposited on the coating of release substance. The release substance is then activated to effect release of the deposited synthetic diamond structure. In a disclosed embodiment of the method of the invention a dome-shaped hollow mandrel is coated with a metal-containing substance, and synthetic diamond is deposited over the coating using a plasma jet deposition process. The metal containing substance is then heated to release the resultant diamond structure from the mandrel. In a form of the disclosed method, the metal-containing substance is a metal alloy which is highly polished before deposition of synthetic diamond thereon. The step of depositing synthetic diamond may include varying the deposition conditions during the depositing of diamond to obtain layers of diamond having different properties. In an embodiment of the apparatus of the invention, means are provided for rotating the mandrel in a deposition chamber, and means are also provided for moving the deposition system in the chamber, such as in an arc over the rotatable mandrel.

    Abstract translation: 用于制造具有预定形状的非平面合成金刚石结构的方法和装置。 提供了预定形状的非平面芯棒表面，并且心轴表面涂覆有释放物质。 合成金刚石沉积在释放物质的涂层上。 然后使释放物质被活化以实现沉积的合成金刚石结构的释放。 在本发明的方法的公开实施例中，圆顶状中空心轴涂覆有含金属物质，并且使用等离子体喷射沉积工艺将合成金刚石沉积在涂层上。 然后加热含金属物质以从心轴释放所得到的金刚石结构。 以所公开的方法的形式，含金属物质是在其上沉积合成金刚石之前被高度抛光的金属合金。 沉积合成金刚石的步骤可以包括在沉积金刚石期间改变沉积条件以获得具有不同性质的金刚石层。 在本发明的设备的一个实施例中，提供了用于在沉积室中旋转心轴的装置，并且还提供了用于将腔室中的沉积系统移动到诸如可旋转心轴上的电弧的装置。

    Method of producing nanocrystalline monolithic articles
    2.
    发明授权
    Method of producing nanocrystalline monolithic articles 有权
    制造纳米晶体整体制品的方法

    公开(公告)号：US07895872B2

    公开(公告)日：2011-03-01

    申请号：US11381387

    申请日：2006-05-03

    Applicant: James B. Mann ,  Srinivasan Chandrasekar ,  Walter Dale Compton

    Inventor： James B. Mann ,  Srinivasan Chandrasekar ,  Walter Dale Compton

    IPC: B21D43/28 ,  B21K27/06 ,  C21D9/00 ,  C30B28/00

    CPC classification number: B21C23/001 ,  B22F1/0044 ,  B22F9/04 ,  B22F2009/046 ,  B22F2998/10 ,  B22F2999/00 ,  B82Y30/00 ,  C21D7/02 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/42 ,  C22C38/44 ,  C22C38/46 ,  C22C38/52 ,  B22F1/0085 ,  B22F3/14

    Abstract: A products having at least a portion thereof with a nanocrystalline microstructure, and methods of producing such products. The method generally entails machining a body to produce a polycrystalline chip having a nanocrystalline microstructure. The chips produced by the machining operation may be in the form of particulates, ribbons, wires, filaments and/or platelets. The chips may be consolidated (with or without comminution) to form a product, such that the product is essentially a nanocrystalline monolithic material consisting essentially or entirely of nano-crystals, or of grains grown from nano-crystals. Alternatively, the chips may be dispersed in a matrix material, such that the product is a composite material in which the chips are dispersed as a reinforcement material. According to a particular aspect, a monolithic article can be formed entirely from a single chip by deforming the chip and/or removing material from the chip.

    Abstract translation: 具有至少一部分具有纳米晶体微结构的产品，以及生产这种产品的方法。 该方法通常需要机械加工以制造具有纳米晶体微结构的多晶片。 通过加工操作生产的碎屑可以是颗粒，带状物，丝，丝和/或血小板的形式。 芯片可以被固结（有或没有粉碎）以形成产品，使得产品基本上是由纳米晶体或由纳米晶体生长的晶粒基本上或全部组成的纳米晶体整体材料。 或者，芯片可以分散在基质材料中，使得该产品是其中芯片作为增强材料分散的复合材料。 根据具体方面，通过使芯片变形和/或从芯片上去除材料，整体制品可以由单个芯片完全形成。

    Method for manufacturing porous silica crystal
    3.
    发明授权
    Method for manufacturing porous silica crystal 失效
    多孔二氧化硅晶体的制造方法

    公开(公告)号：US07763223B2

    公开(公告)日：2010-07-27

    申请号：US11662059

    申请日：2005-09-12

    Applicant: Shuji Noda ,  Takanobu Shiomura ,  Masahiro Tajima ,  Naoto Imawaka ,  Yasuaki Okamoto ,  Takeshi Kubota

    Inventor： Shuji Noda ,  Takanobu Shiomura ,  Masahiro Tajima ,  Naoto Imawaka ,  Yasuaki Okamoto ,  Takeshi Kubota

    IPC: C01B33/12 ,  C30B28/00 ,  B01D9/02

    CPC classification number: C01B37/02 ,  C30B7/00 ,  C30B7/10 ,  C30B29/16

    Abstract: In a synthetic method for porous silica crystals through a hydrothermal reaction, a method for synthesizing porous silica crystals with a size of 0.5 mm or larger in high reproducibility and efficiency is provided using a method for manufacturing the porous silica crystals, wherein a high concentration area with silicon is formed as a partial area inside a hydrothermal synthesis vessel, and at least a part of a surface-smoothed bulk material is present in the high concentration area with silicon to perform the hydrothermal reaction, the bulk material comprising a compound containing both silicon and oxygen as a supply source for a part or a whole of the structure composition elements of the porous silica crystals.

    Abstract translation: 在通过水热反应的多孔二氧化硅晶体的合成方法中，使用多孔二氧化硅晶体的制造方法，提供以高重现性和效率合成尺寸为0.5mm以上的多孔二氧化硅晶体的方法，其中高浓度区域 其中硅在水热合成容器内形成为部分区域，并且至少部分表面平滑的散装材料在硅的高浓度区域中存在以进行水热反应，该散装材料包含含硅的化合物 氧作为多孔二氧化硅结晶的结构组成元素的一部分或全部的供给源。

    Method for Growing Epitaxial Crystal
    8.
    发明申请
    Method for Growing Epitaxial Crystal 有权
    生长外延晶体的方法

    公开(公告)号：US20070261631A1

    公开(公告)日：2007-11-15

    申请号：US11661696

    申请日：2005-06-06

    Applicant: Manabu Kawabe ,  Ryuichi Hirano

    Inventor： Manabu Kawabe ,  Ryuichi Hirano

    IPC: C30B28/00

    CPC classification number: C30B25/20 ,  C30B25/16 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02576

    Abstract: It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an epitaxial crystal while a dopant is added to a compound semiconductor substrate, comprises: obtaining a relation between an off angle and a doping efficiency with regards to the same type of compound semiconductor substrate in advance; and setting a doping condition for carrying out an epitaxial growth on the compound semiconductor substrate based on the obtained relation and a value of the off angle of the substrate.

    Abstract translation: 提供一种生长外延晶体的方法，其中当生长具有所需载流子浓度的外延晶体时，其中设置掺杂条件。 一种将掺杂剂添加到化合物半导体衬底中的生长外延晶体的方法包括：预先获得关于相同类型的化合物半导体衬底的偏角和掺杂效率之间的关系; 以及基于获得的关系和基板的偏离角的值，在化合物半导体基板上设定用于进行外延生长的掺杂条件。

    Method for preparing a preform for a composite material
    9.
    发明授权
    Method for preparing a preform for a composite material 失效
    制备复合材料预成型件的方法

    公开(公告)号：US5620511A

    公开(公告)日：1997-04-15

    申请号：US563101

    申请日：1995-11-27

    Applicant: Junsu Kim ,  Bumgoo Chung

    Inventor： Junsu Kim ,  Bumgoo Chung

    IPC: B22D19/14 ,  B29B11/16 ,  C04B14/32 ,  C04B35/80 ,  C22C47/00 ,  C22C47/02 ,  C22C47/06 ,  C22C47/08 ,  C30B25/00 ,  C30B28/00

    CPC classification number: C30B25/005 ,  C30B29/36

    Abstract: Disclosed in this invention is a method of preparing a whisker-preform comprising the steps of (a) uniformly dispersing a mixture of silicon microparticles and carbon fibers in the ratio of 4:1 to 8:1 into aluminium alkoxide solution; (b) filtering the dispersion obtained in step (a), dehydrating the filtered material, forming and drying the dehydrated material; and (c) heating the material dried in step (b) at a temperature in the range of 300.degree. to 400.degree. C.

    Abstract translation: 在本发明中公开了一种制备晶须预成型体的方法，其包括以下步骤：（a）将硅微粒和碳纤维的混合物以4:1至8:1的比例均匀分散到烷氧基铝溶液中; （b）过滤步骤（a）中获得的分散体，使过滤材料脱水，形成和干燥脱水材料; 和（c）在300-400℃的温度下加热在步骤（b）中干燥的材料。

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