摘要:
According to one embodiment, a polishing device includes a stage, a polishing unit, a warp suppressing unit, and an adsorbing mechanism. A semiconductor wafer is mounted onto the stage. The stage is rotatable around a first shaft. The polishing unit applies a force to and polishes a rear surface of the semiconductor wafer mounted on the stage. The warp suppressing unit applies a force to, during the polishing, an outer circumferential part of a front surface of the semiconductor wafer. The adsorbing mechanism adsorbs, during the polishing, a first region in the rear surface of the semiconductor wafer. The first region is on a center side relative to an area at which the polishing is performed.
摘要:
A sanding apparatus includes a plurality of posts each having an upper end and a lower end. The plurality of posts is four posts. A first horizontal support extends between two of the posts and a second horizontal support extends between another two of the posts. The first and second horizontal supports are vertically adjustable with respect to the posts. A table is mounted to and extends between the first and second horizontal supports. A belt sander is amounted to the posts. The table is positioned between the lower end of the posts and the belt sander. The table is selectively movable upwardly towards or downwardly from the belt sander.
摘要:
A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.
摘要:
A chemical mechanical polishing apparatus includes a rotating plate on which a substrate is received, and a polishing pad which moves across the substrate as it rotates on the plate to polish the substrate. The load of the pad against the substrate, and the rotary speed of the plate, may be varied to control the rate of material removed by the pad.
摘要:
A polishing assembly for CMP of semiconductors includes an air bearing platen having multiple concentric rings of air holes, with each ring defining an air delivery zone. Each ring includes air source holes alternating with air drain holes. A distribution plate is mated with the platen, and the distribution plate has alternating rings of air supply and air exhaust rings. The air supply rings include air supply apertures that are aligned with the air source holes in the platen, and the air exhaust rings include air exhaust apertures that are aligned with the air drain holes in the platen. With this structure, the air distribution profile of each air delivery zone can be established relatively independently of the profiles of the other zones.
摘要:
The present invention relates to an apparatus and method of Chemical Mechanical Planarization ("CMP") for wafer, flat panel display (FPD), and hard drive disk (HDD). The preferred apparatus comprises a looped belt spatially oriented in a vertical direction with respect to a ground floor. A polishing pad is glued to an outer surface of the belt. At an inner surface of the belt, there are a plurality of wafer supports to support the wafers while they are in polishing process. Wafers are loaded from a wafer station to a wafer head using a handling structure before polishing and are unloaded from the wafer head to the wafer station after polishing. An electric motor or equivalent is used to drive the looped belt running over two pulleys. An adjustment means is used to adjust the tension and position of the belt for smooth running. This new CMP machine can be mounted in multiple orientations to save manufacturing space.
摘要:
A chemical mechanical polishing apparatus includes a rotating plate on which a substrate is received, and a polishing pad which moves across the substrate as it rotates on the plate to polish the substrate. The load of the pad against the substrate, and the rotary speed of the plate, may be varied to control the rate of material removed by the pad.
摘要:
A chemical mechanical polishing apparatus includes a rotating plate on which a substrate is received, and a polishing pad which moves across the substrate as it rotates on the plate to polish the substrate. The load of the pad against the substrate, and the rotary speed of the plate, may be varied to control the rate of material removed by the pad.
摘要:
In an apparatus for pressing the grinding belt of a belt grinding machine to the upper surface of a workpiece, a pressing beam located above and extending transversely to the feed direction of the workpiece carries a row of positioning units having downwardly extending positioning rods for applying forces to an equalizing mat positioned between the lower ends of the rods and the inner side of the grinding belt to push the belt downwardly onto the top surface of the workpiece. The forces are transferred from the positioning rods to the equalizing mat by a row of pressure plates respectively associated with the positioning rods with the lower ends of the positioning rods lying loosely against the pressure plates. This achieves a simplified construction easing maintenance and repair and allows the equalizing pad to have the ability to uniformly distribute the forces onto the grinding belt and to have the flexibility needed to accommodate workpiece top surfaces of different shapes.
摘要:
The improvement described in this invention consists of a cross-beam fitted with a lever fixed to and rotating with, at one end, to the end of a single, plate pivot pin projecting from a support frame, the other end of the lever is connected to hydraulic actuating means located on the frame and acting on the lever so as to vary the angle of the plates in relation to the conveyor belt. On the frame there is an adjustable stroke limiter which acts on the lever and limits the angular variation of the lever to within a preset range. The frame is also fitted with automatic engaging and locking means connected to the hydraulic actuating means.