Digital barcode nano-wire and system for bio-sensing using the same
    4.
    发明授权
    Digital barcode nano-wire and system for bio-sensing using the same 有权
    数字条形码纳米线和系统用于生物感应使用

    公开(公告)号:US09011774B2

    公开(公告)日:2015-04-21

    申请号:US12883764

    申请日:2010-09-16

    摘要: Provided are a barcode nano-wire for decoding a hard magnetic segment by using highly sensitive magnetic sensors and a bio-sensing system using the barcode nano-wire. Integration of hard magnetic and non-magnetic segments produces the barcode nanowire and magnetic segments are detected using highly sensitive magnetoresistance sensors. The non-magnetic segment uses a non-magnetic material and a specific biomolecule for bioanalysis is immobilized at a specific portion of the barcode nano-wire. The hard magnetic material has an advantage of higher coercivity and high remanence magnetization, which is considered as an important parameter in selecting the material. The hard magnetic segments produce distinguishable strong stray fields for individually detecting segments using conventional magnetic sensors for multiplexed bioanalysis.

    摘要翻译: 提供了一种条形码纳米线,其通过使用高灵敏度的磁性传感器和使用条形码纳米线的生物感测系统来解码硬磁性段。 硬磁和非磁性段的集成产生条形码纳米线,并使用高灵敏度磁阻传感器检测磁段。 非磁性段使用非磁性材料,生物分析的特定生物分子固定在条形码纳米线的特定部分。 硬磁材料具有矫顽磁力高,剩余磁化强度高的优点,被认为是材料选择的重要参数。 硬磁段产生可区分的强杂散场,用于使用常规磁传感器单独检测段用于多重生物分析。

    INTEGRATED CARBON NANOTUBE FIELD EFFECT TRANSISTOR AND NANOCHANNEL FOR SEQUENCING

    公开(公告)号:US20140152330A1

    公开(公告)日:2014-06-05

    申请号:US13971442

    申请日:2013-08-20

    IPC分类号: G01N27/02

    摘要: A mechanism is provided for base recognition of an integrated transistor and nanochannel. A target molecule is forced down to a carbon nanotube a single base at a time in the nanochannel by applying a gate voltage to a top electrode, and/or a narrow thickness of the nanochannel. The nanochannel exposes an exposed portion of the carbon nanotube at a bottom wall, and the top electrode is positioned over the exposed portion. The exposed portion of the carbon nanotube is smaller than the distance between bases to only accommodate the single base at a time. The target molecule is stretched by the narrow thickness and by applying a traverse voltage across a length direction of the nanochannel. The target molecule is frictionally restricted by the narrow thickness of the nanochannel to stretch is restrictedly translocates in the length direction. Current is measured to determine an identity of the single base.

    CHEMICAL COMPOSITION AND ITS DELIVERY FOR LOWERING THE RISKS OF ALZHEIMER'S, CARDIOVASCULAR AND TYPE-2 DIABETES DISEASES
    8.
    发明申请
    CHEMICAL COMPOSITION AND ITS DELIVERY FOR LOWERING THE RISKS OF ALZHEIMER'S, CARDIOVASCULAR AND TYPE-2 DIABETES DISEASES 审中-公开
    化学成分及其用于降低阿尔茨海默病,心血管和类型2型糖尿病的风险

    公开(公告)号:US20130338039A1

    公开(公告)日:2013-12-19

    申请号:US13663376

    申请日:2012-10-29

    摘要: Chemical compositions of bioactive compounds and/or bioactive molecules for lowering the risks of Alzheimer's, Cardiovascular and Diabetes diseases are described. Targeted, passive and programmable/active deliveries of the bioactive compounds and/or bioactive molecules are described. Subsystems for detection of disease specific biomarkers/an array of disease specific biomarkers and programmable/active delivery of the bioactive compounds and/or bioactive molecules in near real-time/real-time are also described.

    摘要翻译: 描述了用于降低阿尔茨海默病,心血管和糖尿病疾病风险的生物活性化合物和/或生物活性分子的化学成分。 描述了生物活性化合物和/或生物活性分子的靶向,被动和可编程/主动递送。 还描述了用于检测疾病特异性生物标志物/一系列疾病特异性生物标志物和近乎实时/实时的生物活性化合物和/或生物活性分子的可编程/主动递送的子系统。

    SEMICONDUCTOR DEVICES HAVING NANOCHANNELS CONFINED BY NANOMETER-SPACED ELECTRODES
    9.
    发明申请
    SEMICONDUCTOR DEVICES HAVING NANOCHANNELS CONFINED BY NANOMETER-SPACED ELECTRODES 失效
    具有纳米电极限制的纳米管的半导体器件

    公开(公告)号:US20130288417A1

    公开(公告)日:2013-10-31

    申请号:US13928898

    申请日:2013-06-27

    IPC分类号: H01L21/82

    摘要: Semiconductor devices having integrated nanochannels confined by nanometer spaced electrodes, and VLSI (very large scale integration) planar fabrication methods for making the devices. A semiconductor device includes a bulk substrate and a first metal layer formed on the bulk substrate, wherein the first metal layer comprises a first electrode. A nanochannel is formed over the first metal layer, and extends in a longitudinal direction in parallel with a plane of the bulk substrate. A second metal layer is formed over the nanochannel, wherein the second metal layer comprises a second electrode. A top wall of the nanochannel is defined at least in part by a surface of the second electrode and a bottom wall of the nanochannel is defined by a surface of the first electrode.

    摘要翻译: 具有由纳米间隔电极限制的集成纳米通道的半导体器件和用于制造器件的VLSI(非常大规模集成)平面制造方法。 半导体器件包括体基板和形成在本体基板上的第一金属层,其中第一金属层包括第一电极。 纳米通道形成在第一金属层的上方,并且在长度方向上与本体基板的平面平行地延伸。 第二金属层形成在纳米通道上,其中第二金属层包括第二电极。 至少部分地由第二电极的表面限定纳米通道的顶壁,并且纳米通道的底壁由第一电极的表面限定。

    SEMICONDUCTOR DEVICES HAVING NANOCHANNELS CONFINED BY NANOMETER-SPACED ELECTRODES
    10.
    发明申请
    SEMICONDUCTOR DEVICES HAVING NANOCHANNELS CONFINED BY NANOMETER-SPACED ELECTRODES 失效
    具有纳米电极限制的纳米管的半导体器件

    公开(公告)号:US20120256281A1

    公开(公告)日:2012-10-11

    申请号:US13430906

    申请日:2012-03-27

    摘要: Semiconductor devices having integrated nanochannels confined by nanometer spaced electrodes, and VLSI (very large scale integration) planar fabrication methods for making the devices. A semiconductor device includes a bulk substrate and a first metal layer formed on the bulk substrate, wherein the first metal layer comprises a first electrode. A nanochannel is formed over the first metal layer, and extends in a longitudinal direction in parallel with a plane of the bulk substrate. A second metal layer is formed over the nanochannel, wherein the second metal layer comprises a second electrode. A top wall of the nanochannel is defined at least in part by a surface of the second electrode and a bottom wall of the nanochannel is defined by a surface of the first electrode.

    摘要翻译: 具有由纳米间隔电极限制的集成纳米通道的半导体器件和用于制造器件的VLSI(非常大规模集成)平面制造方法。 半导体器件包括体基板和形成在本体基板上的第一金属层,其中第一金属层包括第一电极。 纳米通道形成在第一金属层的上方,并且在长度方向上与本体基板的平面平行地延伸。 第二金属层形成在纳米通道上,其中第二金属层包括第二电极。 至少部分地由第二电极的表面限定纳米通道的顶壁,并且纳米通道的底壁由第一电极的表面限定。