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    Indium oxide nanorod and manufacturing method thereof
    2.
    发明授权
    Indium oxide nanorod and manufacturing method thereof 有权

    公开(公告)号：US09796597B2

    公开(公告)日：2017-10-24

    申请号：US14740293

    申请日：2015-06-16

    Applicant: Kuo-Ming Hsu

    Inventor： Kuo-Ming Hsu

    IPC: C01D15/00 ,  C01G15/00 ,  C30B23/00 ,  C30B29/16 ,  C30B29/60

    CPC classification number: C01G15/00 ,  C01P2004/16 ,  C30B23/007 ,  C30B29/16 ,  C30B29/60

    Abstract: Provided is a manufacturing method of indium oxide nanorods, including the following steps: providing a temperature furnace divided into a first zone and a second zone; putting an indium metal source in the first zone and putting a substrate in the second zone; modulating a temperature of the first zone to a first temperature and modulating a temperature of the second zone to a second temperature, wherein the first temperature is higher than the second temperature; and inputting argon and oxygen into the temperature furnace when the temperature of the first zone reaches the first temperature and the temperature of the second zone reaches the second temperature, wherein a ratio of argon and oxygen is in a range of 30:1 to 70:1 such that a plurality of indium oxide nanorods are formed on the substrate. An indium oxide nanorod is also provided.

    Method for preparing an article having surface layer of uniformly oriented, crystalline, organic microstructures
    4.
    发明授权
    Method for preparing an article having surface layer of uniformly oriented, crystalline, organic microstructures 失效
    制备具有均匀定向，结晶，有机微结构的表面层的制品的方法

    公开(公告)号：US5039561A

    公开(公告)日：1991-08-13

    申请号：US271930

    申请日：1988-11-14

    Applicant: Mark K. Debe

    Inventor： Mark K. Debe

    IPC: C23C14/12 ,  C23C14/20 ,  C23C14/58 ,  C30B23/00 ,  C30B25/00 ,  C30B33/00 ,  F24J2/48

    CPC classification number: C23C14/5806 ,  C23C14/12 ,  C23C14/20 ,  C23C14/58 ,  C23C14/584 ,  C30B23/007 ,  C30B25/005 ,  C30B29/54 ,  C30B29/62 ,  C30B33/00 ,  F24J2/0488 ,  F24J2/485 ,  Y02E10/44

    Abstract: Method of preparing an article comprising a substrate bearing a microlayer which comprises uniformly oriented, crystalline, solid, organic microstructures. The microstructures may be mono- or polycrystalline. In the preferred embodiment, the microstructures are of uniform shape and size. The articles can be prepared by (1) vapor-depositing an organic compound as a thin, continuous film onto a substrate to provide a composite, and (2) annealing the composite in a vacuum sufficiently to induce a physical change in the original deposited film to form the microstructures. The microlayer can be overcoated with other materials to provide desired properties to the article. Articles of this invention are useful for many forms of light trapping, energy absorption, imaging, data transmission and storage, and gradient index applications.

    Abstract translation: 制备包括具有包含均匀取向的结晶，固体，有机微结构的微层的基材的制品的方法。 微结构可以是单晶或多晶。 在优选实施例中，微结构具有均匀的形状和尺寸。 制品可以通过（1）将有机化合物作为薄的连续膜气相沉积到基底上以制备复合材料，以及（2）在真空中使复合材料充分退火以引起原始沉积膜的物理变化 以形成微结构。 微层可以用其他材料涂覆以提供所需的物品。 本发明的制品可用于许多形式的光捕获，能量吸收，成像，数据传输和存储以及梯度指数应用。

    OPTICAL NANOANTENNA USING SINGLE-CRYSTALLINE SILVER NANOWIRE, METHOD OF MANUFACTURING THE SAME AND OPTICAL NANOANTENNA USING SINGLE-CRYSTALLINE METAL NANOWIRE
    6.
    发明申请
    OPTICAL NANOANTENNA USING SINGLE-CRYSTALLINE SILVER NANOWIRE, METHOD OF MANUFACTURING THE SAME AND OPTICAL NANOANTENNA USING SINGLE-CRYSTALLINE METAL NANOWIRE 审中-公开
    使用单晶银纳米线的光学纳米晶，其使用单晶金属纳米线的制造方法和光学纳米级

    公开(公告)号：US20130128366A1

    公开(公告)日：2013-05-23

    申请号：US13625384

    申请日：2012-09-24

    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Bongsoo KIM ,  TaeJoon Kang ,  Ilsun Yoon

    IPC: G02B27/00 ,  C30B23/02

    CPC classification number: G02B5/008 ,  B82Y20/00 ,  C30B23/007 ,  C30B29/02 ,  G02B2207/101

    Abstract: An optical nanoantenna includes a single-crystalline silver (Ag) nanowire. The single-crystalline silver nanowire is configured to output an optical antenna radiation pattern based on incident lights. The optical antenna radiation pattern includes multilobe radiation patterns, and each multilobe radiation pattern has a plurality of lobes that are radially disposed centered on the single-crystalline silver nanowire. The incident lights are visible lights in entire visible wavelength bands. Accordingly, the optical nanoantenna according to example embodiments operates at multiple resonances in the full visible range.

    Abstract translation: 光学纳米天线包括单晶银（Ag）纳米线。 单晶银纳米线被配置为基于入射光输出光学天线辐射图。 光学天线辐射图包括多叶辐射图，并且每个多叶辐射图具有以单晶银纳米线为中心径向设置的多个叶片。 入射光是整个可见光波段的可见光。 因此，根据示例性实施例的光学纳米天线在完全可见光范围内以多个谐振工作。

    FABRICATION METHOD OF BISMUTH SINGLE CRYSTALLINE NANOWIRE
    7.
    发明申请
    FABRICATION METHOD OF BISMUTH SINGLE CRYSTALLINE NANOWIRE 审中-公开
    双晶单晶纳米复合材料的制备方法

    公开(公告)号：US20100316874A1

    公开(公告)日：2010-12-16

    申请号：US12521354

    申请日：2009-01-21

    Applicant: Bongsoo Kim ,  Juneho In

    Inventor： Bongsoo Kim ,  Juneho In

    IPC: B82B3/00 ,  B32B15/02 ,  B82B1/00

    CPC classification number: C30B29/02 ,  C30B23/00 ,  C30B23/007 ,  C30B29/60 ,  Y10T428/2958

    Abstract: A bismuth single crystalline nanowire is fabricated by vaporizing bismuth powder on a substrate without using a template having nanopores. Instead a simple and reproducible vapor-phase transport process is used. The fabricated bismuth nanowires have high purity and quality with perfect single crystallinity, and can have uniform size and are not coagulated on a single crystalline substrate.

    Abstract translation: 铋单晶纳米线是通过在不使用具有纳米孔的模板的情况下将基板上的铋粉末汽化来制造的。 相反，使用简单且可重复的气相输送方法。 制造的铋纳米线具有高纯度和质量，具有完美的单一结晶度，并且可以具有均匀的尺寸，并且不会在单个晶片上凝结。

    Method of Directly-Growing Three-Dimensional Nano-Net-Structures
    9.
    发明申请
    Method of Directly-Growing Three-Dimensional Nano-Net-Structures 审中-公开
    直接生长三维纳米网络结构的方法

    公开(公告)号：US20090092756A1

    公开(公告)日：2009-04-09

    申请号：US11989236

    申请日：2005-08-01

    Applicant: Ningsheng Xu ,  Jun Zhou ,  Shaozhi Deng ,  Li Gong ,  Jun Chen ,  Juncong She

    Inventor： Ningsheng Xu ,  Jun Zhou ,  Shaozhi Deng ,  Li Gong ,  Jun Chen ,  Juncong She

    IPC: B05D3/00

    CPC classification number: C30B23/007 ,  C30B29/16

    Abstract: The present invention provides a method for direct synthesis of three-dimensional nano-net-structures. The method is also named thermal evaporation method, which uses metal powders as the raw materials and silicon wafer, aluminum oxide plates or other high-temperature-resistant materials as substrates. The three-dimensional nano-net-structures of single crystal metal oxides are produced on a substrate by heating the metal powders to certain temperature and then keeping for a period of time under the atmosphere of inert gas. The process of the method is simple and direct, and the cost of the raw material is low. The prepared three-dimensional nano-net-structures will have great application prospects in vacuum microelectronic device and gas sensor device.

    Abstract translation: 本发明提供一种直接合成三维纳米网状结构的方法。 该方法也称为热蒸发法，其以金属粉末为原料，硅片，氧化铝板等耐高温材料为基材。 通过将金属粉末加热至一定温度，然后在惰性气体气氛下保持一段时间，在基板上制造单晶金属氧化物的三维纳米网状结构。 该方法简单直观，原料成本低。 制备的三维纳米网结构将在真空微电子器件和气体传感器器件中具有很大的应用前景。

    Synthesis of fibers of inorganic materials using low-melting metals
    10.
    发明申请
    Synthesis of fibers of inorganic materials using low-melting metals 有权
    使用低熔点金属合成无机材料的纤维

    公开(公告)号：US20070095276A1

    公开(公告)日：2007-05-03

    申请号：US11521084

    申请日：2006-09-14

    Applicant: Mahendra Sunkara ,  Shashank Sharma ,  Hari Chandrasekaran ,  Hongwei Li ,  Sreeram Vaddiraju

    Inventor： Mahendra Sunkara ,  Shashank Sharma ,  Hari Chandrasekaran ,  Hongwei Li ,  Sreeram Vaddiraju

    IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC classification number: C30B25/18 ,  C30B23/007 ,  C30B23/025 ,  C30B25/005 ,  Y10S977/72 ,  Y10S977/762 ,  Y10S977/809 ,  Y10S977/81 ,  Y10S977/825

    Abstract: A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom.

    Abstract translation: 提供了一种在各种半导体材料中产生大量纳米线的方法。 使用低熔点金属如镓，铟，铋和铝的薄膜和液滴来溶解和产生纳米线。 溶质的溶解可以通过使用溶质和低熔点金属的固体源，或使用溶质和低熔点金属的气相源来实现。 所得的纳米线的尺寸范围从1纳米直到1微米的直径和长度范围从1纳米到几百纳米或微米。 该方法不需要以尺寸决定所得纳米线尺寸的簇的形式使用诸如金和铁的金属。 此外，该方法允许较低的生长温度，更好地控制尺寸和尺寸分布，以及更好地控制由其制备的纳米线的组成和纯度。

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