INDIUM OXIDE NANOROD AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    INDIUM OXIDE NANOROD AND MANUFACTURING METHOD THEREOF 审中-公开
    氧化铝纳米粒及其制造方法

    公开(公告)号:US20160075565A1

    公开(公告)日:2016-03-17

    申请号:US14740293

    申请日:2015-06-16

    Applicant: Kuo-Ming Hsu

    Inventor: Kuo-Ming Hsu

    CPC classification number: C01G15/00 C01P2004/16 C30B23/007 C30B29/16 C30B29/60

    Abstract: Provided is a manufacturing method of indium oxide nanorods, including the following steps: providing a temperature furnace divided into a first zone and a second zone; putting an indium metal source in the first zone and putting a substrate in the second zone; modulating a temperature of the first zone to a first temperature and modulating a temperature of the second zone to a second temperature, wherein the first temperature is higher than the second temperature; and inputting argon and oxygen into the temperature furnace when the temperature of the first zone reaches the first temperature and the temperature of the second zone reaches the second temperature, wherein a ratio of argon and oxygen is in a range of 30:1 to 70:1 such that a plurality of indium oxide nanorods are formed on the substrate. An indium oxide nanorod is also provided.

    Abstract translation: 提供了一种氧化铟纳米棒的制造方法,包括以下步骤:提供分为第一区和第二区的温度炉; 在第一区域放置铟金属源,并在第二区域放置衬底; 将第一区域的温度调节到第一温度并将第二区域的温度调节到第二温度,其中第一温度高于第二温度; 以及当所述第一区域的温度达到所述第一温度并且所述第二区域的温度达到第二温度时,将氩和氧输入到所述温度炉中,其中所述氩气和氧气的比例在30:1至70:1的范围内。 1,使得在基板上形成多个氧化铟纳米棒。 还提供了氧化铟纳米棒。

    Indium oxide nanorod and manufacturing method thereof

    公开(公告)号:US09796597B2

    公开(公告)日:2017-10-24

    申请号:US14740293

    申请日:2015-06-16

    Applicant: Kuo-Ming Hsu

    Inventor: Kuo-Ming Hsu

    CPC classification number: C01G15/00 C01P2004/16 C30B23/007 C30B29/16 C30B29/60

    Abstract: Provided is a manufacturing method of indium oxide nanorods, including the following steps: providing a temperature furnace divided into a first zone and a second zone; putting an indium metal source in the first zone and putting a substrate in the second zone; modulating a temperature of the first zone to a first temperature and modulating a temperature of the second zone to a second temperature, wherein the first temperature is higher than the second temperature; and inputting argon and oxygen into the temperature furnace when the temperature of the first zone reaches the first temperature and the temperature of the second zone reaches the second temperature, wherein a ratio of argon and oxygen is in a range of 30:1 to 70:1 such that a plurality of indium oxide nanorods are formed on the substrate. An indium oxide nanorod is also provided.

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