公开(公告)号：US20160306275A1

公开(公告)日：2016-10-20

申请号：US14991828

申请日：2016-01-08

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Won PARK ,  Dae-Hwan JANG ,  Min-Uk KIM ,  Jung-Gun NAM ,  Dae-Young LEE ,  Gug-Rae JO

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B81C2201/015

Abstract: An exemplary embodiment discloses an imprint lithography method including: forming a first imprint pattern on a base substrate in a first area; forming a first resist pattern on the base substrate in a second area, the second area partially overlapping the first area; etching a third area using the first imprint pattern and the first resist pattern as an etch barrier, wherein the third area is a portion of the first area that is not overlapped with the second area; removing the first imprint pattern and the first resist pattern; forming a second imprint pattern on the base substrate in a fourth area which overlaps the second area and partially overlaps the third area; forming a second resist pattern on the base substrate in the third area; and etching the second area using the second imprint pattern and the second resist pattern as an etch barrier.

Abstract translation: 一个示例性实施例公开了一种压印光刻方法，包括：在第一区域中的基底基板上形成第一印记图案; 在第二区域中在基底基板上形成第一抗蚀剂图案，第二区域部分地与第一区域重叠; 使用所述第一印记图案和所述第一抗蚀剂图案蚀刻第三区域作为蚀刻阻挡层，其中所述第三区域是所述第一区域的与所述第二区域不重叠的部分; 去除所述第一印记图案和所述第一抗蚀剂图案; 在与所述第二区域重叠并与所述第三区域部分重叠的第四区域中的所述基底基板上形成第二印记图案; 在所述第三区域中的所述基底基板上形成第二抗蚀剂图案; 以及使用所述第二印记图案和所述第二抗蚀剂图案作为蚀刻屏障来蚀刻所述第二区域。

公开(公告)号：US09989845B2

公开(公告)日：2018-06-05

申请号：US14991828

申请日：2016-01-08

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Won Park ,  Dae-Hwan Jang ,  Min-Uk Kim ,  Jung-Gun Nam ,  Dae-Young Lee ,  Gug-Rae Jo

IPC: C03C15/00 ,  G03F7/00

CPC classification number: G03F7/0002 ,  B81C2201/015

Abstract: An exemplary embodiment discloses an imprint lithography method including: forming a first imprint pattern on a base substrate in a first area; forming a first resist pattern on the base substrate in a second area, the second area partially overlapping the first area; etching a third area using the first imprint pattern and the first resist pattern as an etch barrier, wherein the third area is a portion of the first area that is not overlapped with the second area; removing the first imprint pattern and the first resist pattern; forming a second imprint pattern on the base substrate in a fourth area which overlaps the second area and partially overlaps the third area; forming a second resist pattern on the base substrate in the third area; and etching the second area using the second imprint pattern and the second resist pattern as an etch barrier.

公开(公告)号：US11759782B2

公开(公告)日：2023-09-19

申请号：US16627373

申请日：2018-06-25

Applicant: Teknologian tutkimuskeskus VTT Oy

Inventor： Tiina Maaninen ,  Annukka Kokkonen ,  Marika Kurkinen ,  Sanna Aikio

IPC: B01L3/00 ,  B81B1/00 ,  B81C1/00

CPC classification number: B01L3/502746 ,  B01L3/502707 ,  B81B1/006 ,  B81C1/00119 ,  B01L2200/0605 ,  B01L2200/12 ,  B01L2300/069 ,  B01L2300/0864 ,  B01L2300/0887 ,  B01L2300/123 ,  B01L2300/165 ,  B01L2400/0406 ,  B01L2400/0481 ,  B01L2400/0688 ,  B81B2201/05 ,  B81B2203/0338 ,  B81C2201/015 ,  B81C2203/03

Abstract: A novel microfluidic chip is proposed for performing a chemical or biochemical test in a metered reaction volume. The microfluidic chip has a body which defines an inner flow volume. An inlet has been provided to the body for connecting the inner flow volume to the ambient space. A waste channel forms part of the inner flow volume and is in fluid communication with the inlet. A sample channel also forms part of the inner flow volume and is in fluid communication with the inlet. The sample channel includes a first hydrophobic stop and a second hydrophobic stop at a distance from the first hydrophobic stop so as to provide a metered reaction volume there between. An expelling channel is in fluid communication with the metered reaction volume of the sample channel through the first hydrophobic stop. A sample reservoir is in fluid communication with the metered reaction volume of the sample channel through the second hydrophobic stop.