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    Semiconductor arrangement with thermal insulation configuration
    4.
    发明授权
    Semiconductor arrangement with thermal insulation configuration 有权
    具有隔热配置的半导体布置

    公开(公告)号：US09130531B1

    公开(公告)日：2015-09-08

    申请号：US14226897

    申请日：2014-03-27

    Applicant: Taiwan Semiconductor Manufacturing Company Limited

    Inventor： Chun-wen Cheng ,  Chia-Hua Chu ,  Yi-Chuan Teng

    IPC: H01L21/00 ,  H03H3/007

    CPC classification number: B81B7/0083 ,  B81B3/0081 ,  B81B7/0038 ,  B81B7/008 ,  B81C1/00238 ,  B81C1/00269 ,  B81C1/00285 ,  B81C2203/0771 ,  B81C2203/0792 ,  H01L25/0657 ,  H01L27/092 ,  H01L2924/0002 ,  H03H3/0073 ,  H01L2924/00

    Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a cap wafer, a microelectromechanical systems (MEMS) wafer, and a complementary metal-oxide-semiconductor (CMOS) wafer. The MEMS wafer comprises a thermal insulator air gap formed between a sensing layer and a membrane. An ambient pressure chamber is formed between the CMOS wafer and the membrane of the MEMS wafer. The ambient pressure chamber is configured as a second thermal insulator air gap. The thermal insulator air gap and the second thermal insulator air gap protect portions of the semiconductor arrangement, such as the MEMS wafer, from heat originating from the CMOS wafer, which can otherwise damage such portions of the semiconductor arrangement. In some embodiments, one or more buffer layers are formed over the cap wafer as stress buffers.

    Abstract translation: 除此之外，本文提供了一种或多种用于形成这种半导体布置的半导体布置和技术。 半导体装置包括盖晶片，微机电系统（MEMS）晶片和互补金属氧化物半导体（CMOS）晶片。 MEMS晶片包括形成在感测层和膜之间的热绝缘体气隙。 在CMOS晶片和MEMS晶片的膜之间形成环境压力室。 环境压力室被配置为第二绝热体气隙。 热绝缘体气隙和第二绝热体气隙保护诸如MEMS晶片的半导体装置的部分免受来自CMOS晶片的热量，否则可能损坏半导体装置的这些部分。 在一些实施例中，一个或多个缓冲层作为应力缓冲器形成在帽晶片之上。

    Integrated functional and fluidic circuits in Joule-Thompson microcoolers
    6.
    发明授权
    Integrated functional and fluidic circuits in Joule-Thompson microcoolers 有权

    公开(公告)号：US09999885B1

    公开(公告)日：2018-06-19

    申请号：US14291746

    申请日：2014-05-30

    Applicant: LOCKHEED MARTIN CORPORATION

    Inventor： Krisna Bhargava ,  Mark Goodnough ,  Elna Saito ,  James Kreider

    IPC: F25B9/02 ,  B01L3/00

    CPC classification number: F25B9/02 ,  B01L3/502707 ,  B81B7/0083

    Abstract: An apparatus includes a first substrate of a first material having a first bonding surface, and one or more fluidic channels open at a plane of the first bonding surface. The apparatus also includes a different second material disposed on the first substrate. The second material connects two different portions of the one or more fluidic channels. An outer surface of the second material is at the plane of the first bonding surface at positions between the two portions. The apparatus also includes a second substrate having a second bonding surface in contact with the first bonding surface, the second substrate configured to confine fluid flow within the one or more fluidic channels. In a Joule-Thompson cryocooler apparatus, the first material is a first thermally insulating material and the second material is a thermally conductive material and the second substrate is made of a second thermally insulating material.

    STACKED-DIE MEMS RESONATOR SYSTEM
    7.
    发明申请
    STACKED-DIE MEMS RESONATOR SYSTEM 有权
    堆叠式MEMS谐振器系统

    公开(公告)号：US20170029269A1

    公开(公告)日：2017-02-02

    申请号：US15187748

    申请日：2016-06-20

    Applicant: SiTime Corporation

    Inventor： Pavan Gupta ,  Aaron Partridge ,  Markus Lutz

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0083 ,  B81B7/007 ,  B81B7/0077 ,  B81B2201/0271 ,  B81B2207/07 ,  B81B2207/094 ,  B81C1/0023 ,  B81C1/00301 ,  B81C1/00333 ,  B81C1/00341 ,  B81C2201/016 ,  B81C2203/0118 ,  B81C2203/0154 ,  H01L23/3107 ,  H01L23/34 ,  H01L23/498 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01019 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.

    Abstract translation: 用于微机电系统（MEMS）谐振器系统的薄型封装结构包括电引线，其具有在封装结构的横截面轮廓内的相应的第一和第二高度处的内部和外部电接触表面，以及模具安装表面 第一和第二高度之间的中间高度。 谐振器控制芯片安装到电引线的管芯安装表面，使得谐振器控制芯片的至少一部分设置在第一和第二高度之间并且引线接合到电气的内部电接触表面 铅。 MEMS谐振器芯片以堆叠的管芯配置安装到谐振器控制芯片，并且电机的谐振器芯片，谐振器控制芯片和内部电接触和管芯安装表面被封装在暴露外部的封装外壳内 电气引线的电接触表面在包装结构的外表面。

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