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公开(公告)号：US20240242924A1
公开(公告)日：2024-07-18
申请号：US18560013
申请日：2022-02-25
发明人： Michinobu MIZUMURA
IPC分类号： H01J37/153 , H01J37/21 , H01J37/244 , H01J37/28
CPC分类号： H01J37/153 , H01J37/21 , H01J37/244 , H01J37/28
摘要： A condenser lens works to process an ion beam into a collimated form. An electrical aperture unit is disposed between the condenser lens and the objective lens. The electrical aperture unit works to alter an area through which the ion beam, as processed by the condenser lens, passes, thereby controlling a diameter of the ion beam. A plurality of beam shielding plate units are provided each of which includes a pair of beam shielding plates which are diametrically opposed to each other across the ion beam which has passed through the condenser lens. The beam shielding plates are movable in a direction perpendicular to an optical axis of the ion beam. The beam shielding plate units are arranged around the ion beam to define a diameter of the ion beam passing therethrough.
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公开(公告)号：US20230395353A1
公开(公告)日：2023-12-07
申请号：US18013761
申请日：2021-05-31
IPC分类号： H01J37/317 , H01J37/18 , H01J37/244 , H01J37/16
CPC分类号： H01J37/317 , H01J37/18 , H01J37/244 , H01J37/16
摘要： A process apparatus includes a differential pumping device and a focused ion beam column. The differential pumping device includes a head which has a plurality of annular grooves formed in a surface thereof which faces a substrate to be processed. The annular grooves surround the center of the head. An orifice is formed inside an innermost one of the annular grooves and defines a processing space serving to achieve processing of a process surface of the substrate. A vacuum pump is connected to at least one of the annular grooves to suck gas from the one of the annular grooves with the surface of the head facing the processing surface of the substrate to create a high-level vacuum in the processing space. The focused ion beam column is equipped with a cylindrical chamber leading to the orifice in communication with the processing space. The chamber has disposed therein a focused ion beam optical system which works to emit a focused ion beam through the orifice. A precursor gas supply is connected to the innermost one of the annular grooves to eject a precursor gas toward the process surface so that the precursor gas flows into the processing space along the process surface.
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公开(公告)号：US20230335369A1
公开(公告)日：2023-10-19
申请号：US18025809
申请日：2021-07-27
CPC分类号： H01J37/18 , H01J37/32449 , H01J37/3174
摘要： A focused energy beam apparatus includes a substrate support and a focused energy beam column equipped with a differential pumping device movable to a location facing an area of a process target surface of the substrate. The support supports a periphery of the substrate with a horizontal orientation. A positive pressure chamber is disposed below the substrate and exerts a positive pressure on the process target area to cancel deflection of the substrate arising from its own weight. A local depressurizing mechanism is arranged in the positive pressure chamber, out of contact with the substrate, and exerts a negative pressure on a lower surface of the substrate to cancel a suction force created by the differential pumping device. The local depressurizing mechanism is movable relative to the substrate following movement of the differential pumping device while facing the differential pumping device through the substrate.
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公开(公告)号：US20230307205A1
公开(公告)日：2023-09-28
申请号：US18021356
申请日：2021-06-29
发明人： Michinobu MIZUMURA
CPC分类号： H01J37/18 , H01J37/3007 , H01J2237/1825 , H01J2237/188 , H01J2237/31749
摘要： A focused ion beam system has a differentially-pumped vacuum unit and a focused ion beam column, comprising: a vacuum pad, of a porous material, with a suction surface exposed in a way that surrounds the outer edge of a substrate to be processed; a substrate support on which the substrate and vacuum pad are placed, and a vacuum pump for vacuum evacuation using the vacuum pad. The system provides an arrangement in which, while a head of the differentially-pumped vacuum unit partially falls out of the outer edge of the substrate, the suction surface allows an input of air evacuated from a region between the suction surface and the head, and the processing area on a substrate is expanded by allowing the processing with an ion beam to be performed even in the vicinity of the peripheral substrate surface without requiring a large vacuum chamber.
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公开(公告)号：US20220364218A1
公开(公告)日：2022-11-17
申请号：US17772893
申请日：2020-09-29
摘要： Following a determination that the distance along the Z-direction between the substrate and the mask is greater than the distance along the Z-direction to the nearest end of depth of field (DOF) for a camera from the near side of the mask, a control unit reduces the distance between the X-Y position of a substrate-mark and the X-Y position of the associated mask-mark, with a high-speed relative approach along the Z-direction between the substrate and the mask. Following a determination that the distance along the Z-direction between the substrate and the mask is equal to or less than the distance along the Z-direction to the nearest end of depth of field (DOF) from the near side of the mask, the control unit reduces the distance between the X-Y position of the substrate-mark and the X-Y position of the associated mask-mark, with a reduced-speed relative approach along the Z-direction.
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公开(公告)号：US20220184729A1
公开(公告)日：2022-06-16
申请号：US17438228
申请日：2020-02-07
发明人： Michinobu Mizumura
IPC分类号： B23K26/03 , B23K26/351 , B23K26/70
摘要： The present invention enables a layer to be worked to be properly subjected to a correcting process without being affected by the variations in the material of the underlayer or in the film thickness of the layer. A laser repair method for irradiating a defect portion of a multilayer film structure formed on a substrate, and performing a correcting process is provided. The method includes: acquiring an image of a region including the defect portion; and setting a scan range of the laser beam on the image so as to include the defect portion. At the time of scan of the inside of the scan range with the laser beam, at a scanning position at which color information of the image is recognized as that of the defect portion, an output of the laser beam is controlled to be ON or High.
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公开(公告)号：US20210387283A1
公开(公告)日：2021-12-16
申请号：US17284880
申请日：2019-10-09
发明人： Michinobu MIZUMURA
IPC分类号： B23K26/073 , B23K26/08 , H01L27/12 , H01L21/268
摘要： To provide a laser annealing apparatus which is high efficiency of irradiation energy and capable of achieving uniformity in density of irradiation energy in a region irradiated with a laser beam.
SOLVING MEANS
Scheduled treatment regions of a treatment film are each defined in the form of a strip extending in a scanning direction. Irradiation surface areas of line beams are oriented to be inclined relative to the scanning direction within respective scheduled treatment regions.-
公开(公告)号：US20210310862A1
公开(公告)日：2021-10-07
申请号：US17264026
申请日：2019-06-12
发明人： Michinobu Mizumura
摘要： A laser energy measuring device with which laser light radiated onto a substrate can be evaluated accurately. The laser energy measuring device includes: inside or outside an illuminating optical system, a first beam splitter which reflects laser light by any one of P-polarized reflection and S-polarized reflection; a second beam splitter which performs the other of P-polarized reflection and S-polarized reflection with respect to first reflected light reflected by the first beam splitter; a first measuring unit which measures energy of second reflected light reflected by the second beam splitter; and a second measuring unit which measures energy of transmitted light that has been transmitted through the second beam splitter.
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公开(公告)号：US10950437B2
公开(公告)日：2021-03-16
申请号：US16109640
申请日：2018-08-22
发明人： Michinobu Mizumura
IPC分类号： H01L21/02 , H01L27/12 , H01L21/324 , H01L29/04 , H01L29/786 , B23K26/352
摘要： A laser annealing method is for irradiating an amorphous silicon film formed on a substrate 6 with laser beams and crystalizing the amorphous silicon film, wherein a plurality of first and second TFT formation portions 23, 24 on the substrate 6 are irradiated with laser beams at differing irradiation doses so as to crystalize the amorphous silicon film in the first TFT formation portions 23 into a polysilicon film having a crystalline state and crystalize the amorphous silicon film in the second TFT formation portions 24 into a polysilicon film having another crystalline state that is different from that of the polysilicon film in the first TFT formation portions 23.
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公开(公告)号：US10896978B2
公开(公告)日：2021-01-19
申请号：US16343022
申请日：2017-09-04
发明人： Tetsuya Goto , Michinobu Mizumura
IPC分类号： H01L29/786 , H01L21/425 , H01L29/66
摘要： In an oxide semiconductor device including an active layer region constituted by an oxide semiconductor, stability when a stress is applied is improved. The oxide semiconductor device includes an active layer region constituted by an oxide semiconductor of indium (In), gallium (Ga), and zinc (Zn), wherein the active layer region contains an element selected from titanium (Ti), zirconium (Zr), and hafnium (Hf) that are Group 4 elements, or carbon (C), silicon (Si), germanium (Ge), and tin (Sn) that are Group 14 elements at a number density in a range of 1×1016 to 1×1020 cm−3.
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