公开(公告)号：US20250069858A1

公开(公告)日：2025-02-27

申请号：US18807175

申请日：2024-08-16

Applicant: ULVAC, INC.

Inventor： Kenta DOI ,  Toshiyuki NAKAMURA ,  Yasuhiro MORIKAWA ,  Kensuke AKAZAWA ,  Daisuke HIRONIWA

IPC: H01J37/32 ,  H01J37/09

Abstract: [Object] To provide a plasma processing apparatus capable of expanding an formation region of plasma generated on an upper electrode side to increase the processing speed and a control method therefor.
[Solving Means] A plasma processing apparatus according to an embodiment of the present invention includes a vacuum chamber, a substrate-supporting stage, a counter electrode, and a resonant circuit. The substrate-supporting stage is disposed inside the vacuum chamber and is connected to a first high-frequency power supply circuit that supplies a high-frequency power at a first frequency. The counter electrode is disposed in opposite to the stage and is connected to a second high-frequency power supply circuit that supplies a high-frequency power at a second frequency. The resonant circuit allows high-frequency current at the second frequency from the counter electrode to pass therethrough.

公开(公告)号：US12217969B2

公开(公告)日：2025-02-04

申请号：US17393208

申请日：2021-08-03

Applicant: ULVAC, Inc.

Inventor： Kenta Doi ,  Toshiyuki Sakuishi ,  Toshiyuki Nakamura ,  Yasuhiro Morikawa

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308

Abstract: A silicon dry etching method of the invention, includes: preparing a silicon substrate; forming a mask pattern having an opening on the silicon substrate; forming a deposition layer on the silicon substrate in accordance with the mask pattern while introducing a first gas; carrying out a dry etching process with respect to the silicon substrate in accordance with the mask pattern while introducing a second gas, and thereby forming a recess pattern on a surface of the silicon substrate; and carrying out an ashing process with respect to the silicon substrate while introducing a third gas.

公开(公告)号：US20240401224A1

公开(公告)日：2024-12-05

申请号：US18700218

申请日：2022-08-04

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  ULVAC, INC.

Inventor： Junji Tominaga ,  Noriyuki Miyata ,  Shutaro Asanuma ,  Yuusuke Miyaguchi ,  Kazuya Saito ,  Takehito Jinbo ,  Kazumasa Horita ,  Takeshi Masuda

IPC: C30B1/02 ,  C23C14/02 ,  C23C14/06 ,  C23C14/34 ,  C23C14/58 ,  C30B29/46 ,  C30B29/68 ,  H10B63/10 ,  H10N70/00 ,  H10N70/20

Abstract: Provided is a method of manufacturing a crystallized stacked structural body excellent in manufacturing efficiency. The present invention is characterized by including: a stacked structural body forming step of forming a stacked structural body (7) in which an Sb2Te3 layer (5) having a thickness of from 2 nm to 10 nm and a GeTe layer (6) having a thickness of more than 0 nm and 4 nm or less are stacked, and a trace addition element (S or Se) is incorporated at a content of from 0.05 at % to 10.0 at % into the GeTe layer (6) on an orientation control layer (4) configured to give, to the Sb2Te3 layer (5) and the GeTe layer (6) at the time of their crystallization, a common crystal axis, the step being performed under a temperature of less than 100° C. including room temperature; an Sb2Te3 layer-crystallizing step of crystallizing the Sb2Te3 layer (5) by heating and holding the stacked structural body (7) at a first crystallization temperature of 100° C. or more and less than 170° C.; and a GeTe layer-crystallizing step of crystallizing the GeTe layer (6) by heating and holding the stacked structural body (7) in which the Sb2Te3 layer (5) is crystallized at a second crystallization temperature of 170° C. or more and 400° C. or less.

公开(公告)号：US20240120233A1

公开(公告)日：2024-04-11

申请号：US18263548

申请日：2022-09-26

Applicant: ULVAC, INC.

Inventor： Tetsushi Fujinaga ,  Yukinobu Numata ,  Yasuo Ookubo ,  Daiki Shimada

IPC: H01L21/687 ,  C23C14/50 ,  H01L21/683

CPC classification number: H01L21/68742 ,  C23C14/505 ,  H01L21/6831

Abstract: A vacuum processing apparatus of this invention having a stage on which is disposed the to-be-processed substrate further has a lifting/rotation mechanism capable of lifting the to-be-processed substrate lying on the stage off from an upper surface of the stage to a predetermined height position so that, at this lifted position, the to-be-processed substrate is capable of rotation about a substrate center by a predetermined rotational angle. The lifting/rotation mechanism has: a driving rod built into the stage so as to be moveable up and down and also be rotatable; and a substrate supporting body having a base end plate part capable of contacting a central region, including the substrate center, of the to-be-processed substrate. The substrate supporting body further has at least two arm plate parts elongated from the base end plate part outward thereof.

公开(公告)号：US11935936B2

公开(公告)日：2024-03-19

申请号：US17055852

申请日：2019-03-28

Applicant: ULVAC, INC.

Inventor： Yuusuke Ujihara ,  Motoshi Kobayashi ,  Yasuhiko Akamatsu ,  Tomohiro Nagata ,  Ryouta Nakamura ,  Junichi Nitta ,  Yasuo Nakadai

IPC: H01L29/49 ,  C22C21/00 ,  C22F1/04 ,  C23C14/14 ,  H01L21/285 ,  C23C14/34

CPC classification number: H01L29/49 ,  C22C21/00 ,  C22F1/04 ,  C23C14/14 ,  H01L21/285 ,  C23C14/34

Abstract: [Object] It is an object of the present invention to provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor including the aluminum alloy film.
[Solving Means] In order to achieve the above-mentioned object, an aluminum alloy film according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. Such an aluminum alloy film has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.

公开(公告)号：US20240069519A1

公开(公告)日：2024-02-29

申请号：US18237796

申请日：2023-08-24

Applicant: ULVAC, Inc.

Inventor： Yoshinori FUJII

IPC: G05B19/4063

CPC classification number: G05B19/4063 ,  G05B2219/31455 ,  G05B2219/32373 ,  G05B2219/45031

Abstract: An information processing device of the present invention includes a first acquisition unit, a second acquisition unit, and a machine learning processing unit. The first acquisition unit acquires total event status information. The second acquisition unit acquires time-series detection result information. The machine learning processing unit performs one or both of learning processing and determination processing. In the learning processing, a learning model is generated by performing machine learning with the time-series detection result information acquired by the second acquisition unit as an input for each piece of the total event status information acquired by the first acquisition unit. In the determination processing, a determination is performed on the generated learning model by inputting the time-series detection result information acquired by the second acquisition unit for each piece of the total event status information acquired by the first acquisition unit.

公开(公告)号：US20240058839A1

公开(公告)日：2024-02-22

申请号：US18360950

申请日：2023-07-28

Applicant: ULVAC, INC.

Inventor： Shunsuke SASAKI ,  Takahito KIMOTO ,  Yoshiaki FUKUDA ,  Ken MAEHIRA

IPC: B05D1/28

CPC classification number: B05D1/28

Abstract: A vacuum treatment apparatus including: a first wind-off roller paying out a first base material; a first wind roller winding the first base material; a main roller having an outer circumferential surface in contact with a non-film deposition surface, and winding and conveying the first base material, at least a part of the outer circumferential surface, which is uncovered with the first base material, being coated with an insulating material; a deposition source facing the outer circumferential surface of the main roller; a second wind-off roller paying out a second base material that is wound and conveyed by the main roller and covers a part of a film deposition surface of the first base material on the outer circumferential surface of the main roller; a second wind roller winding the second base material; and a power source applying a bias potential to the main roller.

公开(公告)号：US20240055239A1

公开(公告)日：2024-02-15

申请号：US18259151

申请日：2022-09-27

Applicant: ULVAC, INC.

Inventor： Yuta Ando ,  Akira Igari ,  Naoki Morimoto

IPC: H01J37/32 ,  H01L21/02 ,  H01J37/34 ,  C23C14/06 ,  C23C14/54

CPC classification number: H01J37/32697 ,  H01L21/0217 ,  H01L21/02266 ,  H01J37/32449 ,  H01J37/3426 ,  C23C14/0652 ,  C23C14/542 ,  H01J2237/332

Abstract: In a method in which inside a vacuum chamber, a silicon target and a to-be-deposited object are disposed in a positional relationship to face each other; a sputtering gas, containing therein nitrogen gas, is introduced into the vacuum chamber which is in a vacuum atmosphere; a negative potential is applied to the silicon target such that a silicon nitride film having a tensile stress is deposited in a reactive sputtering on a surface of the to-be-deposited object that is placed in an electrically floated state. The method includes steps: in which the to-be-deposited object is made to a state in which a bias potential is free from being applied thereto; and at least one of a flow ratio of the nitrogen gas to the sputtering gas, and the potential to be applied to the silicon target is controlled such that the surface of the silicon target can be maintained in a transition mode.

公开(公告)号：US11869791B2

公开(公告)日：2024-01-09

申请号：US17311872

申请日：2019-09-02

Applicant: ULVAC, INC.

Inventor： Dai Takagi ,  Yuu Mizushima ,  Toshiyuki Koizumi

IPC: C23C14/50 ,  C23C14/56 ,  H01L21/677

CPC classification number: H01L21/6776 ,  C23C14/50 ,  C23C14/56 ,  H01L21/67715 ,  H01L21/677

Abstract: The present invention provides a technology capable of inhibiting, in a vacuum processing apparatus that conveys a plurality of substrate holders along a conveying path formed to have a projected shape on a vertical surface, the projected shape being a continuous ring shape, dust from being generated during conveyance of a substrate holder. The present invention includes, in a vacuum chamber 2, an anti-sag member 35 assembled to a first drive unit 36 provided on an outer side with respect to a conveying direction of the conveying path, the vacuum chamber 2 including a conveying path formed to have a projected shape on the vertical surface, the projected shape being a continuous ring shape, a single vacuum atmosphere being formed in the vacuum chamber 2. A travel roller 54 of the anti-sag member 35 travels while being guided and supported by a guide unit 17 that is provided below a return-path-side conveying portion 33c positioned on a lower side of a substrate holder conveying mechanism 3 and extends in a second conveying direction P2, and the first drive part 36 is configured to come into contact with a first driven unit 12 of a substrate holder 11 and drive the substrate holder 11 along the conveying path in the second conveying direction P2.

公开(公告)号：US11674217B2

公开(公告)日：2023-06-13

申请号：US16070094

申请日：2017-03-23

Applicant: ULVAC, INC.

Inventor： Junsuke Matsuzaki ,  Hirohisa Takahashi

IPC: C23C14/56 ,  C23C14/18 ,  C23C14/50 ,  H01J37/32 ,  H01J37/34 ,  H01L21/67 ,  H01L21/677 ,  H01L31/18 ,  C23C14/34 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/20

CPC classification number: C23C14/56 ,  C23C14/185 ,  C23C14/50 ,  H01J37/32899 ,  H01J37/3488 ,  H01L21/67173 ,  H01L21/67742 ,  H01L31/1864 ,  H01L31/1884 ,  C23C14/34 ,  H01L31/022475 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/202

Abstract: A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.