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公开(公告)号：US10284171B2
公开(公告)日：2019-05-07
申请号：US15449104
申请日：2017-03-03
摘要： An elastic wave device including a substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the substrate, a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film that does not cover a first region of the first wiring electrode but covers a second region of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region, and a second wiring electrode that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate.
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公开(公告)号：US10075146B2
公开(公告)日：2018-09-11
申请号：US15344878
申请日：2016-11-07
发明人： Yosuke Hamaoka , Mitsuhiro Furukawa , Toru Yamaji
IPC分类号： H03H9/10 , H03H9/02 , H03H3/10 , H03H3/02 , H03H9/13 , H03H9/56 , H03H9/72 , H03H9/19 , H03H9/70
CPC分类号： H03H9/1092 , H03H3/02 , H03H3/10 , H03H9/02984 , H03H9/02992 , H03H9/1064 , H03H9/13 , H03H9/19 , H03H9/56 , H03H9/70 , H03H9/725
摘要： An elastic wave device including a sealing structure. Examples of the elastic wave device include a piezoelectric substrate, an IDT electrode provided on the substrate, a first wiring electrode provided on the substrate adjacent the IDT electrode, a second wiring electrode provided on the first wiring electrode, and a dielectric sealing structure that extends over and seals an excitation space above the IDT electrode in which the IDT electrode excites the elastic wave. The second wiring electrode includes a protrusion formed on its outer periphery and extending beyond the first wiring electrode into the excitation space. The first and/or second wiring electrodes are electrically connected to the IDT electrode. The dielectric sealing structure includes a sealing wall provided on the second wiring electrode, the sealing wall being spaced apart from the IDT electrode by the protrusion and having a side surface that defines a side edge of the excitation space.
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公开(公告)号：US09748924B2
公开(公告)日：2017-08-29
申请号：US14809994
申请日：2015-07-27
IPC分类号： H03H9/25 , H03H9/02 , H01L41/047
CPC分类号： H03H9/25 , H01L41/047 , H03H9/02818 , H03H9/02992
摘要： An elastic wave device includes an interdigital transducer (IDT) electrode in contact with a piezoelectric substrate having a bus bar electrode region including one of a first bus bar electrode and a second bus bar electrode of the IDT electrode, an alternately disposed region where first electrode fingers are alternately disposed with second electrode fingers of the IDT electrode, and an intermediate region including one of the first electrode fingers and the second electrode fingers. A dielectric film is formed in at least part of the intermediate region and in contact with an upper surface of the IDT electrode. The dielectric film includes a medium in which an acoustic velocity of a transverse wave propagating in the dielectric film is lower than an acoustic velocity of a main elastic wave of the alternately disposed region. The dielectric film is not formed in the alternately disposed region.
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公开(公告)号：US09641151B2
公开(公告)日：2017-05-02
申请号：US14810165
申请日：2015-07-27
发明人： Satoru Ikeuchi
CPC分类号： H03H9/02559 , H03H9/02834 , H03H9/6483 , H03H9/725
摘要： An elastic wave filter including a substrate, a signal line disposed on the substrate and connecting a first signal terminal to a second signal terminal, a plurality of series resonators connected to the signal line in series, and a plurality of parallel resonators connected to the signal line. At least one of the series resonator having an anti-resonant frequency closest to the passband of the filter among the plurality of series resonators, and/or the parallel resonator having a resonant frequency closest to the passband of the filter among the plurality of parallel resonators, is covered with a dielectric film that is relatively thicker than a dielectric film covering the other series and/or parallel resonators.
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公开(公告)号：US09467117B2
公开(公告)日：2016-10-11
申请号：US14248111
申请日：2014-04-08
CPC分类号： H03H9/725 , H03H9/02834 , H03H9/14588 , H03H9/205 , H03H9/56 , H03H9/568 , H03H9/605 , H03H9/6483 , H03H9/70 , H03H9/706
摘要： In a ladder-type elastic wave filter, a resonance frequency of a second parallel resonator is higher than that of a series resonator and lower than an antiresonance frequency of a series resonator. With this configuration, an attenuation pole is formed by the second parallel resonator at a frequency region lower than an attenuation pole formed by the series resonator in a frequency region higher than the passband of the ladder-type elastic wave filter.
摘要翻译： 在梯型弹性波滤波器中，第二并联谐振器的谐振频率高于串联谐振器的谐振频率，并且低于串联谐振器的反共振频率。 利用这种配置，在比梯形弹性波滤波器的通带高的频率区域中，在低于由串联谐振器形成的衰减极点的频率区域处，由第二并联谐振器形成衰减极。
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公开(公告)号：US11863156B2
公开(公告)日：2024-01-02
申请号：US16545037
申请日：2019-08-20
发明人： Tomohiro Iwasaki , Hiroyuki Nakamura , Toru Yamaji , Mitsunori Miyanari , Masahiro Yasumi , Shoji Okamoto
CPC分类号： H03H9/02559 , H03H3/08 , H03H3/10 , H03H9/02834 , H03H9/02937 , H03H9/02984 , H03H9/131 , H03H9/132
摘要： A surface acoustic wave device comprises a substrate and an interdigital transducer (IDT) electrode disposed on the substrate. The IDT electrode includes a lower electrode layer having a lower surface in contact with an upper surface of the substrate and an upper electrode layer having a lower surface defining a base in contact with an upper surface of the lower electrode layer. Side surfaces of the lower electrode layer are substantially perpendicular to the upper surface of the substrate. Side surfaces of the upper electrode layer are disposed at an acute angle relative to the upper surface of the substrate.
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公开(公告)号：US10778183B2
公开(公告)日：2020-09-15
申请号：US15651216
申请日：2017-07-17
发明人： Yoshiaki Ando , Satoshi Niwa , Hiroyuki Nakamura
摘要： Aspects and examples provide electronic elements and filter devices configured to prevent deterioration of the propagation characteristics caused by input and output signals being electromagnetically coupled to an electric conductor side wall. In one example an electronic filter includes an element substrate having a top surface, a bottom surface, a side surface, and piezoelectric body. A circuit including a plurality of SAW resonators is formed on the top surface of the element substrate. The electronic filter further includes a sealing substrate having a top surface and a bottom surface, and a side wall including an electric conductor and formed to define a cavity between the top surface of the element substrate and the bottom surface of the sealing substrate, the side wall enclosing a periphery of the circuit and being connected to a ground potential of the circuit.
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8.发明授权公开(公告)号：US10574202B2
公开(公告)日：2020-02-25
申请号：US15472461
申请日：2017-03-29
IPC分类号： H01L41/053 , B81B1/00 , H03H9/17 , H03H3/007 , B81C1/00 , H03H9/19 , H03H3/00 , H03H9/54 , H03H9/64
摘要： A method of fabricating an electronic component includes forming a functional unit on a main surface of a substrate, forming a sacrificial layer covering the functional unit on the main surface, forming a cap layer covering the sacrificial layer, the cap layer forming a periphery enclosing the cavity on the main surface, forming holes through the cap layer, forming a cavity by removing the sacrificial layer using a wet etching process through the holes, the holes including a peripheral hole communicating an inside of the cavity with an outside of the cavity along the main surface, and forming a first resin layer covering the cap layer and the main surface.
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公开(公告)号：US10374570B2
公开(公告)日：2019-08-06
申请号：US15430865
申请日：2017-02-13
摘要： A method of manufacturing an acoustic wave element includes simultaneously forming a plurality of electrodes on a piezoelectric substrate, the plurality of electrodes including first and second IDT electrodes and a connection electrode, forming an insulation over the plurality of electrodes and the piezoelectric substrate, the insulation having a first thickness in a direction perpendicular to the surface of the piezoelectric substrate over the second IDT electrode, processing a first portion of the insulation over the first IDT electrode and a second portion of the insulation over the connection electrode to reduce a thickness of the first and second portions of the insulation to a second thickness, and processing a third portion of the insulation over the surface of the second IDT electrode to reduce the first thickness of the third portion to a third thickness, the third thickness being greater than the second thickness.
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公开(公告)号：US10135422B2
公开(公告)日：2018-11-20
申请号：US15281286
申请日：2016-09-30
发明人： Rei Goto , Joji Fujiwara , Tetsuya Tsurunari , Hiroyuki Nakamura
摘要： A filter device having improved attenuation and isolation characteristics. In one example the filter device has a common terminal, a first terminal, and a second terminal, and includes a first filter connected between the common terminal and the first terminal, a second filter connected between the common terminal and the second terminal, and an additional circuit including at least three IDT electrodes each connected to a respective one of a corresponding at least three connection points within the filter device, the at least three connection points being selected from a group consisting of the common terminal, the first terminal, the second terminal, a first node disposed between the plurality of first filter elements along a path extending between the common terminal and the first terminal, and a second node disposed between the plurality of second filter elements along a path extending between the common terminal and the second terminal.
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