公开(公告)号：US5447796A

公开(公告)日：1995-09-05

申请号：US261212

申请日：1994-06-15

申请人： Yuji Tsukamoto ,  Takashi Fukuchi

发明人： Yuji Tsukamoto ,  Takashi Fukuchi

IPC分类号： G11B5/71 ,  C10M103/02 ,  C10M105/06 ,  C10M105/10 ,  C10M105/12 ,  C10M105/60 ,  C10N40/18 ,  G11B5/64 ,  G11B5/65 ,  G11B5/72 ,  G11B5/725 ,  G11B5/74 ,  G11B23/50 ,  G11B5/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  G11B23/507 ,  G11B5/72 ,  G11B5/725 ,  G11B5/74 ,  Y10S428/90 ,  Y10T428/30

摘要： A magnetic disk has a magnetic medium or a protection film, and a solid lubrication film formed on the medium or the protection film and consisting of a fullerene C60, C 70 or C84 and an alkyl or allyl-chained fullerene. The lubrication film provides the disk with high mechanical durability and high linear recording density.

摘要翻译： 磁盘具有磁介质或保护膜，以及形成在介质或保护膜上并由富勒烯C 60，C 70或C 84和烷基或烯丙基链的富勒烯组成的固体润滑膜。 润滑膜为盘提供高机械耐久性和高线性记录密度。

公开(公告)号：US08034176B2

公开(公告)日：2011-10-11

申请号：US11390196

申请日：2006-03-28

申请人： Yuji Tsukamoto ,  H. Steven Tomozawa ,  Sam Yong Kim ,  Thomas Hamelin

发明人： Yuji Tsukamoto ,  H. Steven Tomozawa ,  Sam Yong Kim ,  Thomas Hamelin

IPC分类号： C23C16/453

CPC分类号： H01L21/6875

摘要： A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a remote radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.

摘要翻译： 描述了蚀刻后处理系统，用于去除蚀刻过程中形成的光致抗蚀剂和蚀刻残留物。 例如，蚀刻残渣可以包括含卤素材料。 蚀刻后处理系统包括真空室，耦合到真空室的远程自由基产生系统，耦合到自由基产生系统并被配置为在基板上分布反应性基团的自由基气体分配系统，以及耦合到 真空室并且构造成支撑基板。 气体分配系统被配置为有效地将基团输送到基底并且将基团分布在基底上方。

公开(公告)号：US07164236B2

公开(公告)日：2007-01-16

申请号：US10793253

申请日：2004-03-05

申请人： Andrej S. Mitrovic ,  Eric J. Strang ,  Murray D. Sirkis ,  Bill H. Quon ,  Richard Parsons ,  Yuji Tsukamoto

发明人： Andrej S. Mitrovic ,  Eric J. Strang ,  Murray D. Sirkis ,  Bill H. Quon ,  Richard Parsons ,  Yuji Tsukamoto

IPC分类号： H05B31/26 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32935

摘要： A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, τi, Φi, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, τi is the on-time of the RF power for the ith RF feed line, Φi is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece (176) being processed with a desired amount or degree of process uniformity.

摘要翻译： 一种用于产生和控制形成在电容耦合等离子体系统（100）中的等离子体（130）的方法和装置，其具有工件支撑构件（170）形式的等离子体电极（140）和偏置电极，其中等离子体电极 是单一的并且具有由多个RF馈电线（156）限定的多个区域（RF）和传递给其的RF功率。 电极区域也可以被定义为由绝缘体（426）分离的电极段（420）。 一组过程参数A = {n，τi，i，P i， 被定义; 其中n是在位置L i1处连接到电极上表面的RF馈送线的数量，τi是针对i 是相对于其他RF馈线中选择的一个RF馈线的第i个RF馈线的相位，P < SUB> i 是通过位置L i i处的第i个RF馈线传送到电极的RF功率，S是RF功率到 电极通过RF馈线。 调整这些参数中的一个或多个，使得等离子体系统的操作导致以期望的量或程度的均匀度处理工件（176）。

公开(公告)号：US4856326A

公开(公告)日：1989-08-15

申请号：US224306

申请日：1988-07-26

申请人： Yuji Tsukamoto

发明人： Yuji Tsukamoto

IPC分类号： G01N3/00 ,  G01N3/06 ,  G01N3/20 ,  G01N19/04 ,  G01N29/14 ,  H01L21/66

CPC分类号： G01N19/04 ,  G01N2203/0605

摘要： An apparatus for measuring the adhesion force of a thin film deposited on a substrate of a specimen. The apparatus comprises an inclining mechanism for mounting a sample dish with a specimen inclined by a predetermined angle with respect to the sample dish, an indentor disposed above the specimen for deforming the specimen by indentation, a driver for driving the indentor perpendicular to the sample dish, a load transducer for measuring a load applied to the specimen by the indentor, a sensor for sensing propagation of a crack produced in the specimen by the load, a displacement gage interlocked with the driver for measuring a penetration depth of the indentor, and a measuring mechanism for measuring the adhesion force of the thin film to the substrate.

摘要翻译： 一种用于测量沉积在样品的基底上的薄膜的粘附力的装置。 该装置包括：倾斜机构，用于安装具有相对于样品皿倾斜预定角度的样本的样品盘;设置在试样上方的压头，用于通过压痕使试样变形;驱动器，用于驱动压板垂直于样品盘 用于测量由压头施加到样本的负载的负载传感器，用于感测由负载产生的样本中产生的裂纹的传播的传感器，与驱动器联锁的位移计，用于测量压头的穿透深度;以及 用于测量薄膜对基片的粘附力的测量机构。

公开(公告)号：US07952049B2

公开(公告)日：2011-05-31

申请号：US11929288

申请日：2007-10-30

申请人： Yuji Tsukamoto

发明人： Yuji Tsukamoto

IPC分类号： B23K10/00

CPC分类号： H01L21/67103 ,  H01L21/67109

摘要： A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support. The method further includes setting the temperature of the base support to a first base temperature corresponding to a first processing temperature of said substrate, setting the substrate support to a first support temperature corresponding to said first processing temperature of said substrate, setting the temperature of the base support to a second base temperature corresponding to a second processing temperature of said substrate, and setting the substrate support to a second support temperature corresponding to said second processing temperature of said substrate.

摘要翻译： 在衬底处理期间改变衬底的温度的方法包括在衬底保持器上设置衬底，衬底保持器包括用于支撑衬底的温度控制的衬底支撑件，用于支撑衬底支撑件的温度受控的底座支撑件和热 介于温度控制的基板支架和温度控制的基座支架之间的绝缘体。 该方法还包括将基座支撑件的温度设定为与所述基板的第一处理温度相对应的第一基座温度，将基板支撑件设置为对应于所述基板的所述第一处理温度的第一支撑温度， 基底支撑件对应于所述基板的第二处理温度的第二基板温度，以及将所述基板支撑件设置为对应于所述基板的所述第二处理温度的第二支撑温度。

公开(公告)号：US07723648B2

公开(公告)日：2010-05-25

申请号：US11525815

申请日：2006-09-25

申请人： Yuji Tsukamoto ,  Eric J. Strang

发明人： Yuji Tsukamoto ,  Eric J. Strang

IPC分类号： H05B3/68 ,  F27B5/14

CPC分类号： F27D5/0037 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67103

摘要： A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.

摘要翻译： 用于在处理系统中支撑衬底的衬底保持器包括具有第一温度的温度控制的支撑基座和与温度受控的支撑基座相对并且被配置为支撑衬底的衬底支撑件。 还包括一个或多个加热元件，其耦合到衬底支撑件并且被配置为将衬底支撑件加热到高于第一温度的第二温度，以及设置在温度受控支撑基底和衬底支撑件之间的热绝缘体。 热绝缘体包括通过温度控制的支撑基底和基底支撑件之间的热绝缘体的传热系数（W / m 2 -K）的不均匀的空间变化。

公开(公告)号：US07297894B1

公开(公告)日：2007-11-20

申请号：US11526119

申请日：2006-09-25

申请人： Yuji Tsukamoto

发明人： Yuji Tsukamoto

IPC分类号： B23K10/00

CPC分类号： H01L21/67103 ,  H01L21/67109

摘要： A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support. The method further includes setting the temperature of the base support to a first base temperature corresponding to a first processing temperature of the substrate, setting the substrate support to a first support temperature corresponding to the first processing temperature of the substrate, setting the temperature of the base support to a second base temperature corresponding to a second processing temperature of the substrate, and setting the substrate support to a second support temperature corresponding to the second processing temperature of the substrate.

摘要翻译： 在衬底处理期间改变衬底的温度的方法包括在衬底保持器上设置衬底，衬底保持器包括用于支撑衬底的温度控制的衬底支撑件，用于支撑衬底支撑件的温度受控的底座支撑件和热 介于温度控制的基板支架和温度控制的基座支架之间的绝缘体。 该方法还包括将基底支撑件的温度设定为与衬底的第一处理温度相对应的第一基底温度，将衬底支撑件设置为对应于衬底的第一处理温度的第一支撑温度， 基底支撑件对应于对应于衬底的第二处理温度的第二基底温度，以及将衬底支撑件设置为对应于衬底的第二处理温度的第二支撑温度。

公开(公告)号：US06639766B2

公开(公告)日：2003-10-28

申请号：US09983359

申请日：2001-10-24

申请人： Ishiwata Nobuyuki ,  Hisanao Tsuge ,  Hisao Matsutera ,  Yuji Tsukamoto ,  Masafumi Nakada ,  Atsushi Kamijo

发明人： Ishiwata Nobuyuki ,  Hisanao Tsuge ,  Hisao Matsutera ,  Yuji Tsukamoto ,  Masafumi Nakada ,  Atsushi Kamijo

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3109 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A magneto-resistance effect (“MR”) type composite head includes a reproduction head with an MR element arranged between a first and a second magnetic shield; and a recording head arranged adjacent to the reproduction head so as to use the second magnetic shield as a first magnetic pole film and having a second magnetic pole film opposing to the first magnetic pole via a magnetic gap; the MR element includes a center region including a ferromagnetic tunnel junction magneto-resistance effect film having a first ferromagnetic layer and a second ferromagnetic layer for generating a magneto-resistance effect using the first and the second magnetic shields as electrodes so that a current flows in an almost vertical direction between the first and the second magnetic shields; a tunnel barrier layer provided between the first and the second ferromagnetic layer; and an end region arranged to sandwich the center region from both sides for /applying a bias magnetic field to the center region.

公开(公告)号：US06181503B2

公开(公告)日：2001-01-30

申请号：US08991557

申请日：1997-12-16

申请人： Yuji Tsukamoto ,  Ken Ajiki

发明人： Yuji Tsukamoto ,  Ken Ajiki

IPC分类号： G11B541

CPC分类号： G11B5/6005 ,  G11B5/012 ,  G11B33/1446

摘要： It is an object of the present invention to improve reliability to a dust or the like of a magnetic disk device. The magnetic disk device of the present invention comprises a magnetic disk 10, a levitation type magnetic head slider 12 and a controller 14 for controlling an operation of the magnetic head slider 12 and the controller 14. The controller 14 moves the magnetic head slider 12 to a CSS (Contact Start Stop) region of the magnetic disk 10 at a predetermined time interval and performs a CSS operation at least once.

公开(公告)号：US06174736B1

公开(公告)日：2001-01-16

申请号：US09209696

申请日：1998-12-11

申请人： Yuji Tsukamoto ,  Hisanao Tsuge ,  Nobuyuki Ishiwata ,  Hisao Matsutera ,  Masafumi Nakada ,  Atsushi Kamijo

发明人： Yuji Tsukamoto ,  Hisanao Tsuge ,  Nobuyuki Ishiwata ,  Hisao Matsutera ,  Masafumi Nakada ,  Atsushi Kamijo

IPC分类号： H01L2100

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/31 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  H01L43/12 ,  Y10T428/12458 ,  Y10T428/12465 ,  Y10T428/12569 ,  Y10T428/12931

摘要： There is provided a method of fabricating a ferromagnetic tunnel junction device, including the steps of (a) forming a first ferromagnetic layer on a substrate, (b) forming a tunnel barrier layer on the first ferromagnetic layer, (c) forming a second ferromagnetic layer on the tunnel barrier layer, (d) mechanically polishing end surfaces of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer, and (e) etching the surfaces of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer. The method provides a ferromagnetic tunnel junction device having a height defined with high accuracy, and including a tunnel barrier layer keeping first and second ferromagnetic layers in electrical isolation with each other.

摘要翻译： 提供一种制造铁磁隧道结器件的方法，包括以下步骤：（a）在衬底上形成第一铁磁层，（b）在第一铁磁层上形成隧道势垒层，（c）形成第二铁磁性层 （d）机械抛光第一铁磁层，隧道势垒层和第二铁磁层的端面，以及（e）蚀刻第一铁磁层，隧道势垒层和 第二铁磁层。 该方法提供具有高精度限定的高度的铁磁隧道连接装置，并且包括保持彼此电隔离的第一和第二铁磁层的隧道势垒层。