摘要:
A magnetic disk has a magnetic medium or a protection film, and a solid lubrication film formed on the medium or the protection film and consisting of a fullerene C60, C 70 or C84 and an alkyl or allyl-chained fullerene. The lubrication film provides the disk with high mechanical durability and high linear recording density.
摘要:
A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a remote radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.
摘要:
A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, τi, Φi, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, τi is the on-time of the RF power for the ith RF feed line, Φi is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece (176) being processed with a desired amount or degree of process uniformity.
摘要翻译:一种用于产生和控制形成在电容耦合等离子体系统(100)中的等离子体(130)的方法和装置,其具有工件支撑构件(170)形式的等离子体电极(140)和偏置电极,其中等离子体电极 是单一的并且具有由多个RF馈电线(156)限定的多个区域(RF)和传递给其的RF功率。 电极区域也可以被定义为由绝缘体(426)分离的电极段(420)。 一组过程参数A = {n,τi,i,P i, 被定义; 其中n是在位置L i1处连接到电极上表面的RF馈送线的数量,τi是针对i 是相对于其他RF馈线中选择的一个RF馈线的第i个RF馈线的相位,P < SUB> i SUB>是通过位置L i i处的第i个RF馈线传送到电极的RF功率,S是RF功率到 电极通过RF馈线。 调整这些参数中的一个或多个,使得等离子体系统的操作导致以期望的量或程度的均匀度处理工件(176)。
摘要:
An apparatus for measuring the adhesion force of a thin film deposited on a substrate of a specimen. The apparatus comprises an inclining mechanism for mounting a sample dish with a specimen inclined by a predetermined angle with respect to the sample dish, an indentor disposed above the specimen for deforming the specimen by indentation, a driver for driving the indentor perpendicular to the sample dish, a load transducer for measuring a load applied to the specimen by the indentor, a sensor for sensing propagation of a crack produced in the specimen by the load, a displacement gage interlocked with the driver for measuring a penetration depth of the indentor, and a measuring mechanism for measuring the adhesion force of the thin film to the substrate.
摘要:
A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support. The method further includes setting the temperature of the base support to a first base temperature corresponding to a first processing temperature of said substrate, setting the substrate support to a first support temperature corresponding to said first processing temperature of said substrate, setting the temperature of the base support to a second base temperature corresponding to a second processing temperature of said substrate, and setting the substrate support to a second support temperature corresponding to said second processing temperature of said substrate.
摘要:
A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.
摘要翻译:用于在处理系统中支撑衬底的衬底保持器包括具有第一温度的温度控制的支撑基座和与温度受控的支撑基座相对并且被配置为支撑衬底的衬底支撑件。 还包括一个或多个加热元件,其耦合到衬底支撑件并且被配置为将衬底支撑件加热到高于第一温度的第二温度,以及设置在温度受控支撑基底和衬底支撑件之间的热绝缘体。 热绝缘体包括通过温度控制的支撑基底和基底支撑件之间的热绝缘体的传热系数(W / m 2 -K)的不均匀的空间变化。
摘要:
A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support. The method further includes setting the temperature of the base support to a first base temperature corresponding to a first processing temperature of the substrate, setting the substrate support to a first support temperature corresponding to the first processing temperature of the substrate, setting the temperature of the base support to a second base temperature corresponding to a second processing temperature of the substrate, and setting the substrate support to a second support temperature corresponding to the second processing temperature of the substrate.
摘要:
A magneto-resistance effect (“MR”) type composite head includes a reproduction head with an MR element arranged between a first and a second magnetic shield; and a recording head arranged adjacent to the reproduction head so as to use the second magnetic shield as a first magnetic pole film and having a second magnetic pole film opposing to the first magnetic pole via a magnetic gap; the MR element includes a center region including a ferromagnetic tunnel junction magneto-resistance effect film having a first ferromagnetic layer and a second ferromagnetic layer for generating a magneto-resistance effect using the first and the second magnetic shields as electrodes so that a current flows in an almost vertical direction between the first and the second magnetic shields; a tunnel barrier layer provided between the first and the second ferromagnetic layer; and an end region arranged to sandwich the center region from both sides for /applying a bias magnetic field to the center region.
摘要:
It is an object of the present invention to improve reliability to a dust or the like of a magnetic disk device. The magnetic disk device of the present invention comprises a magnetic disk 10, a levitation type magnetic head slider 12 and a controller 14 for controlling an operation of the magnetic head slider 12 and the controller 14. The controller 14 moves the magnetic head slider 12 to a CSS (Contact Start Stop) region of the magnetic disk 10 at a predetermined time interval and performs a CSS operation at least once.
摘要:
There is provided a method of fabricating a ferromagnetic tunnel junction device, including the steps of (a) forming a first ferromagnetic layer on a substrate, (b) forming a tunnel barrier layer on the first ferromagnetic layer, (c) forming a second ferromagnetic layer on the tunnel barrier layer, (d) mechanically polishing end surfaces of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer, and (e) etching the surfaces of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer. The method provides a ferromagnetic tunnel junction device having a height defined with high accuracy, and including a tunnel barrier layer keeping first and second ferromagnetic layers in electrical isolation with each other.