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    Processing system and method for treating a substrate
    8.
    发明授权
    Processing system and method for treating a substrate 有权
    用于处理基材的处理系统和方法

    公开(公告)号：US07029536B2

    公开(公告)日：2006-04-18

    申请号：US10705201

    申请日：2003-11-12

    Applicant: Thomas Hamelin ,  Jay Wallace ,  Arthur LaFlamme, Jr.

    Inventor： Thomas Hamelin ,  Jay Wallace ,  Arthur LaFlamme, Jr.

    IPC: H01L21/302

    CPC classification number: H01L21/67748 ,  C23C16/4405 ,  C25D11/02 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  Y10T29/41

    Abstract: A processing system and method for chemical oxide removal (COR), wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

    Abstract translation: 一种用于化学氧化物去除（COR）的处理系统和方法，其中所述处理系统包括第一处理室和第二处理室，其中所述第一和第二处理室彼此耦合。 第一处理室包括提供温度控制室的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。 在包括表面温度和气体压力在内的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 第二处理室包括热处理室，其提供与化学处理室热绝缘的温度控制室。 热处理室提供用于控制基板的温度以热处理基板上化学处理的表面的基板保持器。

    Gas distribution system for a post-etch treatment system
    9.
    发明授权
    Gas distribution system for a post-etch treatment system 有权
    用于蚀刻后处理系统的气体分配系统

    公开(公告)号：US08034176B2

    公开(公告)日：2011-10-11

    申请号：US11390196

    申请日：2006-03-28

    Applicant: Yuji Tsukamoto ,  H. Steven Tomozawa ,  Sam Yong Kim ,  Thomas Hamelin

    Inventor： Yuji Tsukamoto ,  H. Steven Tomozawa ,  Sam Yong Kim ,  Thomas Hamelin

    IPC: C23C16/453

    CPC classification number: H01L21/6875

    Abstract: A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a remote radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.

    Abstract translation: 描述了蚀刻后处理系统，用于去除蚀刻过程中形成的光致抗蚀剂和蚀刻残留物。 例如，蚀刻残渣可以包括含卤素材料。 蚀刻后处理系统包括真空室，耦合到真空室的远程自由基产生系统，耦合到自由基产生系统并被配置为在基板上分布反应性基团的自由基气体分配系统，以及耦合到 真空室并且构造成支撑基板。 气体分配系统被配置为有效地将基团输送到基底并且将基团分布在基底上方。

    Substrate holder having a fluid gap and method of fabricating the substrate holder
    10.
    发明授权
    Substrate holder having a fluid gap and method of fabricating the substrate holder 有权
    具有流体间隙的衬底保持器和制造衬底保持器的方法

    公开(公告)号：US08007591B2

    公开(公告)日：2011-08-30

    申请号：US10587390

    申请日：2004-12-23

    Applicant: Thomas Hamelin

    Inventor： Thomas Hamelin

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC classification number: H01L21/67109 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/466

    Abstract: A substrate holder (20) for supporting a substrate (30). A heating component (50) is positioned adjacent to a supporting surface and between the supporting surface and a cooling component (60). A fluid gap is positioned between the cooling component and the heating component, the fluid gap configured to receive a fluid to increase thermal conduction between the cooling component and the heating component. A brazing material is disposed between the cooling component and the heating component, the brazing material disposed adjacent to the fluid gap.

    Abstract translation: 一种用于支撑衬底（30）的衬底保持器（20）。 加热部件（50）定位成与支撑表面相邻并且在支撑表面和冷却部件（60）之间。 流体间隙位于冷却部件和加热部件之间，流体间隙构造成接收流体以增加冷却部件和加热部件之间的热传导。 钎焊材料设置在冷却部件和加热部件之间，钎焊材料邻近流体间隙设置。

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