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198 条记录 (耗时 0.031 秒)

    Grace state and pacing in link aggregation
    4.
    发明授权
    Grace state and pacing in link aggregation 有权
    Grace状态和起搏在链路聚合

    公开(公告)号：US09374298B2

    公开(公告)日：2016-06-21

    申请号：US13466657

    申请日：2012-05-08

    申请人： Chia Alex Tsai ,  Yuchen Zhou ,  Rajagopalan Janakiraman ,  Yibin Yang

    发明人： Chia Alex Tsai ,  Yuchen Zhou ,  Rajagopalan Janakiraman ,  Yibin Yang

    IPC分类号： H04L12/709 ,  H04L12/703

    CPC分类号： H04L45/245 ,  H04L45/28 ,  Y02D50/30

    摘要： In one embodiment, one or more indicia of stress are monitored. Based on the one or more indicia of stress, it is determined a stress condition exists. In response to the stress condition, one or more link aggregation actors and partners are caused to enter a grace state for a grace period. While the one or more link aggregation actors and partners are in the grace state, link aggregation formation is paced on a plurality of links by delaying formation of one or more new link aggregation groups on the plurality of links until a hold is released. Upon expiration of the grace period, the grace state is exited.

    摘要翻译： 在一个实施例中，监视一个或多个应力标记。 基于一个或多个应力标记，确定存在应力条件。 为了应对压力情况，一个或多个链路聚合行为者和伙伴被引入宽限期的宽限期。 当一个或多个链路聚合参与者和伙伴处于宽限期状态时，通过延迟多个链路上的一个或多个新的链路聚合组的形成直到释放保持，在多个链路上进行链路聚合形成。 在宽限期结束时，退出恩典状态。

    Initialization method of a perpendicular magnetic random access memory (MRAM) device with a stable reference cell
    7.
    发明授权
    Initialization method of a perpendicular magnetic random access memory (MRAM) device with a stable reference cell 有权
    具有稳定参考单元的垂直磁随机存取存储器（MRAM）器件的初始化方法

    公开(公告)号：US08830736B2

    公开(公告)日：2014-09-09

    申请号：US13360553

    申请日：2012-01-27

    申请人： Yuchen Zhou ,  Yiming Huai

    发明人： Yuchen Zhou ,  Yiming Huai

    IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C11/56

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  Y10S977/933 ,  Y10S977/935

    摘要： A method of initializing a magnetic random access memory (MRAM) element that is configured to store a state when electric current flows therethrough is disclosed. The MRAM element includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. The direction of magnetization of the FL is determinative of the data bit stored in the at least one MTJ and each MTJ further includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ for storing reference bit.

    摘要翻译： 公开了一种初始化磁性随机存取存储器（MRAM）元件的方法，该磁性随机存取存储器被配置为在电流流经时存储状态。 MRAM元件包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。 FL的磁化方向决定了存储在至少一个MTJ中的数据位，并且每个MTJ还包括具有与膜平面垂直的方向具有磁化的磁参考层（RL），以及磁性固定 层（PL）具有与膜平面垂直的方向的磁化。 在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。 在第二MTJ中，FL，RL和PL的磁化方向相对于彼此平行，用于存储参考位。

    Perpendicular magnetic medium with shields between tracks
    8.
    发明授权
    Perpendicular magnetic medium with shields between tracks 有权
    轨道之间具有屏蔽的垂直磁性介质

    公开(公告)号：US08795763B2

    公开(公告)日：2014-08-05

    申请号：US12005182

    申请日：2007-12-26

    申请人： Yuchen Zhou ,  Lijie Guan ,  Kunliang Zhang

    发明人： Yuchen Zhou ,  Lijie Guan ,  Kunliang Zhang

    IPC分类号： G11B5/74

    CPC分类号： G11B5/746 ,  B82Y10/00 ,  C23C14/225 ,  C23C16/45555 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855

    摘要： A track shield structure is disclosed that enables higher track density to be achieved in a patterned track medium without increasing adjacent track erasure and side reading. This is accomplished by placing a soft magnetic shielding structure in the space that is present between the tracks in the patterned medium. A process for manufacturing the added shielding structure is also described.

    摘要翻译： 公开了一种轨道屏蔽结构，其能够在图案化的轨道介质中实现更高的轨道密度，而不增加相邻轨迹擦除和侧面读数。 这通过在存在于图案化介质中的轨道之间的空间中放置软磁屏蔽结构来实现。 还描述了用于制造附加的屏蔽结构的方法。

    MR sensor with flux guide enhanced hard bias structure
    9.
    发明授权
    MR sensor with flux guide enhanced hard bias structure 有权
    带传感器的MR传感器增强了硬偏置结构

    公开(公告)号：US08659292B2

    公开(公告)日：2014-02-25

    申请号：US12660909

    申请日：2010-03-05

    申请人： Yuchen Zhou ,  Tong Zhao ,  Kunliang Zhang

    发明人： Yuchen Zhou ,  Tong Zhao ,  Kunliang Zhang

    IPC分类号： G01R33/02

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/0011 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3941

    摘要： A CPP MR sensor interposes a tapered soft magnetic flux guide (FG) layer between a hard magnetic biasing layer (HB) and the free layer of the sensor stack. The flux guide channels the flux of the hard magnetic biasing layer to effectively bias the free layer, while eliminating instability problems associated with magnetostatic coupling between the hard bias layers and the upper and lower shields surrounding the sensor when the reader-shield-spacing (RSS) is small.

    摘要翻译： CPP MR传感器将锥形软磁通导向器（FG）层介于硬磁偏置层（HB）和传感器堆叠的自由层之间。 磁通引导件引导硬磁偏置层的磁通，以有效地偏置自由层，同时消除与读取器屏蔽间隔（RSS）之间的硬偏置层与传感器周围的上下屏蔽之间的静磁耦合相关的不稳定性问题 ） 是小。

    Magnetic random access memory with field compensating layer and multi-level cell
    10.
    发明授权
    Magnetic random access memory with field compensating layer and multi-level cell 有权
    具有场补偿层和多级单元的磁随机存取存储器

    公开(公告)号：US08565010B2

    公开(公告)日：2013-10-22

    申请号：US13099321

    申请日：2011-05-02

    申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang

    发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Jing Zhang

    IPC分类号： G11C11/15

    CPC分类号： G11C11/16 ,  G11C11/161 ,  H01L43/02

    摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.

    摘要翻译： 自旋转矩磁性随机存取存储器（STTMRAM）元件包括形成在基板上的参考层，具有固定的垂直磁性分量。 接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。 间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。 自由层的磁性取向相对于固定层的磁性取向。 固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。