- 专利标题： MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME
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申请号： US13737897申请日： 2013-01-09
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公开(公告)号： US20190148622A9公开(公告)日： 2019-05-16
- 发明人: Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
- 申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
- 申请人地址： US CA Fremont
- 专利权人： Avalanche Technology, Inc.
- 当前专利权人： Avalanche Technology, Inc.
- 当前专利权人地址： US CA Fremont
- 主分类号： H01L43/02
- IPC分类号： H01L43/02
摘要：
A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.
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