公开(公告)号：US07312506B2

公开(公告)日：2007-12-25

申请号：US11093652

申请日：2005-03-30

申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Chin Lin

发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Chin Lin

IPC分类号： H01L29/82

CPC分类号： G11C11/16

摘要： A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

摘要翻译： 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。

公开(公告)号：US07443638B2

公开(公告)日：2008-10-28

申请号：US10907974

申请日：2005-04-22

申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

IPC分类号： G11B5/39 ,  G11B5/33

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B2005/3996

摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.

摘要翻译： 这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。 磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。 使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。 因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。 自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。 绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

公开(公告)号：US20060238925A1

公开(公告)日：2006-10-26

申请号：US10907974

申请日：2005-04-22

申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B2005/3996

摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.

摘要翻译： 这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。 磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。 使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。 因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。 自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。 绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

公开(公告)号：US07466585B2

公开(公告)日：2008-12-16

申请号：US11380777

申请日：2006-04-28

申请人： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

发明人： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  G11C29/50 ,  G11C2029/5002

摘要： An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

摘要翻译： 一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。 磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。 当施加加热电流时，字线可操作以加热磁性薄膜存储元件。 将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。 薄膜元件的磁状态可以根据霍尔效应的原理来确定。

公开(公告)号：US20060233002A1

公开(公告)日：2006-10-19

申请号：US11093652

申请日：2005-03-30

申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Lin

发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Lin

IPC分类号： G11C19/08

CPC分类号： G11C11/16

摘要： A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

摘要翻译： 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。

公开(公告)号：US20070253244A1

公开(公告)日：2007-11-01

申请号：US11380777

申请日：2006-04-28

申请人： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

发明人： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  G11C29/50 ,  G11C2029/5002

摘要： An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

摘要翻译： 一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。 磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。 当施加加热电流时，字线可操作以加热磁性薄膜存储元件。 将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。 薄膜元件的磁状态可以根据霍尔效应的原理来确定。

公开(公告)号：US20080186757A1

公开(公告)日：2008-08-07

申请号：US11743453

申请日：2007-05-02

申请人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

发明人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/005 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a technique for created an advanced MRAM array for constructing a memory integrated circuit chip. More specifically, the disclosed principles provide for an integrated circuit memory chip comprised of a combination of at least one of an array of high-speed magnetic memory cells, and at least one of an array of high-density magnetic memory cells. Accordingly, a memory chip constructed as disclosed herein provides the benefit of both high-speed and high-density memory cells on the same memory chip. As a result, applications benefiting from the use of (or perhaps even needing) high-speed memory cells are provided by the memory cells in the high-speed memory cell array.

摘要翻译： 这里公开了一种用于创建用于构建存储器集成电路芯片的高级MRAM阵列的技术。 更具体地，所公开的原理提供了由高速磁存储器单元的阵列中的至少一个和高密度磁存储单元阵列中的至少一个的组合构成的集成电路存储器芯片。 因此，如本文所公开的构造的存储器芯片提供了在相同存储器芯片上的高速和高密度存储器单元的益处。 结果，受益于使用（或甚至需要的）高速存储器单元的应用由高速存储单元阵列中的存储单元提供。

公开(公告)号：US07719882B2

公开(公告)日：2010-05-18

申请号：US11743453

申请日：2007-05-02

申请人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

发明人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/005 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a technique for created an advanced MRAM array for constructing a memory integrated circuit chip. More specifically, the disclosed principles provide for an integrated circuit memory chip comprised of a combination of at least one of an array of high-speed magnetic memory cells, and at least one of an array of high-density magnetic memory cells. Accordingly, a memory chip constructed as disclosed herein provides the benefit of both high-speed and high-density memory cells on the same memory chip. As a result, applications benefiting from the use of (or perhaps even needing) high-speed memory cells are provided by the memory cells in the high-speed memory cell array.

摘要翻译： 这里公开了一种用于创建用于构建存储器集成电路芯片的高级MRAM阵列的技术。 更具体地，所公开的原理提供了由高速磁存储器单元的阵列中的至少一个和高密度磁存储单元的阵列中的至少一个的组合构成的集成电路存储器芯片。 因此，如本文所公开的构造的存储器芯片提供了在相同存储器芯片上的高速和高密度存储器单元的益处。 结果，受益于使用（或甚至需要的）高速存储器单元的应用由高速存储单元阵列中的存储单元提供。

公开(公告)号：US08153471B2

公开(公告)日：2012-04-10

申请号：US12945860

申请日：2010-11-14

申请人： Li-Shyue Lai ,  Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin

发明人： Li-Shyue Lai ,  Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin

IPC分类号： H01L21/06

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1691

摘要： A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory element contact area; and, wherein the spacer bottom portion partially overlaps the conductive area. Both these two methods can reduce active area of a phase change memory element, therefore, reducing a required phase changing electrical current.

摘要翻译： 一种相变存储器结构及其形成方法，所述方法包括提供包括导电区域的衬底; 在间隔物的上部形成具有部分暴露的侧壁区域的间隔物，其限定相变存储元件接触区域; 并且其中所述间隔件底部部分与所述导电区域重叠。 这两种方法都可以减少相变存储元件的有效面积，从而减少所需的相变电流。

公开(公告)号：US07964900B2

公开(公告)日：2011-06-21

申请号：US12586688

申请日：2009-09-24

申请人： Wen-Chin Lin ,  Denny Tang ,  Chuan-Ying Lee ,  Hsu Chen Cheng

发明人： Wen-Chin Lin ,  Denny Tang ,  Chuan-Ying Lee ,  Hsu Chen Cheng

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/76 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/823481 ,  H01L21/823878 ,  H01L27/08

摘要： A semiconductor substrate includes semi-insulating portions beneath openings in a patterned hardmask film formed over a semiconductor substructure to a thickness sufficient to prevent charged particles from passing through the hardmask. The semi-insulating portions include charged particles and may extend deep into the semiconductor substrate and electrically insulate devices formed on opposed sides of the semi-insulating portions. The charged particles may advantageously be protons and further substrate portions covered by the patterned hardmask film are substantially free of the charged particles.

摘要翻译： 半导体衬底包括在半导体子结构上形成的图案化硬掩模膜的开口下方的半绝缘部分，其厚度足以防止带电粒子通过硬掩模。 半绝缘部分包括带电粒子并且可以深深地延伸到半导体衬底中并且电绝缘形成在半绝缘部分的相对侧上的器件。 带电粒子可以有利地是质子，并且由图案化的硬掩模膜覆盖的另外的基底部分基本上没有带电粒子。