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1.发明申请Light-emitting device, method for making the same, and nitride semiconductor substrate 失效发光装置及其制造方法以及氮化物半导体基板公开(公告)号：US20060237732A1
公开(公告)日：2006-10-26
申请号：US11361144
申请日：2006-02-23
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/32 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/10157 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device is presented which includes a GaN substrate 1; an n-type nitride semiconductor substrate layer (n-type AlxGa1-xN layer 3) disposed on a first main surface side of the GaN substrate 1; a p-type nitride semiconductor substrate layer (p-type AlxGa1-xN layer 5) disposed further away from the GaN substrate 1 compared to the n-type nitride semiconductor substrate layer; and a light-emitting layer (multi-quantum well (MQW) 4) positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The p-type nitride semiconductor layer side is down-mounted. Also, light is released from a second main surface 1a, which the main surface opposite from the first main surface of the GaN substrate 1. A groove 80 is formed on the second main surface of the GaN substrate 1. The inner perimeter surface of the groove 80 includes a section (curved surface section) on which surface treatment is performed to smooth the inner perimeter surface.
摘要翻译： 提出了一种发光器件，其包括GaN衬底1; 设置在GaN衬底1的第一主表面侧的n型氮化物半导体衬底层（n型Al x Ga 1-x N层3）; 与n型（n型）相比，配置在比GaN衬底1更远的p型氮化物半导体衬底层（p型Al x Ga 1-x N层5） 氮化物半导体衬底层; 以及位于n型氮化物半导体层和p型氮化物半导体层之间的发光层（多量子阱（MQW）4）。 p型氮化物半导体层侧被下放。 此外，从与GaN衬底1的第一主表面相反的主表面的第二主表面1a释放光。在GaN衬底1的第二主表面上形成有沟槽80。 槽80包括在其上进行表面处理以平滑内周表面的部分（曲面部分）。
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公开(公告)号：US07560740B2
公开(公告)日：2009-07-14
申请号：US11361144
申请日：2006-02-23
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/32 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/10157 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device is presented which includes a GaN substrate 1; an n-type nitride semiconductor substrate layer (n-type AlxGa1-xN layer 3) disposed on a first main surface side of the GaN substrate 1; a p-type nitride semiconductor substrate layer (p-type AlxGa1-xN layer 5) disposed further away from the GaN substrate 1 compared to the n-type nitride semiconductor substrate layer; and a light-emitting layer (multi-quantum well (MQW) 4) positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The p-type nitride semiconductor layer side is down-mounted. Also, light is released from a second main surface 1a, which the main surface opposite from the first main surface of the GaN substrate 1. A groove 80 is formed on the second main surface of the GaN substrate 1. The inner perimeter surface of the groove 80 includes a section (curved surface section) on which surface treatment is performed to smooth the inner perimeter surface.
摘要翻译： 提出了一种发光器件，其包括GaN衬底1; 设置在GaN衬底1的第一主表面侧的n型氮化物半导体衬底层（n型Al x Ga 1-x N 3） 与n型氮化物半导体衬底层相比更远离GaN衬底1设置的p型氮化物半导体衬底层（p型Al x Ga 1-x N层5） 以及位于n型氮化物半导体层和p型氮化物半导体层之间的发光层（多量子阱（MQW）4）。 p型氮化物半导体层侧被下放。 此外，从与GaN衬底1的第一主表面相对的主表面的第二主表面1a释放光。在GaN衬底1的第二主表面上形成有沟槽80。 槽80包括在其上进行表面处理以平滑内周表面的截面（曲面部分）。
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3.发明授权Light emitting device, method for making the same, and nitride semiconductor substrate 有权发光元件及其制造方法以及氮化物半导体基板公开(公告)号：US07423284B2
公开(公告)日：2008-09-09
申请号：US11362407
申请日：2006-02-24
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/08 , H01L39/22 , H01L27/15 , H01L29/267 , H01L31/12 , H01L33/00 , H01L29/22
CPC分类号： H01L33/20 , H01L33/32 , H01L2224/48091 , H01L2224/73265 , H01L2924/01012 , H01L2924/01079 , H01L2924/12041 , H01L2924/00014
摘要： A light-emitting device includes a GaN substrate; a n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate compared to the n-type AlxGa1-xN layer; a multi-quantum well (MQW) positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In this light-emitting device, the p-type AlxGa1-xN layer side is down-mounted and light is emitted from the second main surface, which is the main surface of the GaN substrate opposite from the first main surface. hemispherical projections are formed on the second main surface of the GaN substrate.
摘要翻译： 发光器件包括GaN衬底; 在GaN衬底的第一主表面侧上的n型Al x Ga 1-x N层; 与n型Al x Ga相比位于更远离GaN衬底的p型Al x Ga 1-x N层， SUB> 1-x N层; 定位在n型Al x Ga 1-x N层和p型Al x x N层之间的多量子阱（MQW） Ga 1-x N层。 在该发光装置中，p型Al x Ga 1-x N层侧被下放，从第二主表面射出光 GaN衬底的与第一主表面相对的主表面。 在GaN衬底的第二主表面上形成半球形突起。
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公开(公告)号：US20060278864A1
公开(公告)日：2006-12-14
申请号：US11365642
申请日：2006-02-28
IPC分类号： H01L29/06
CPC分类号： H01L33/22 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device is equipped with a GaN substrate; an n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate than the n-type AlxGa1-xN layer; and a multi-quantum well (MQW) positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light-emitting device, the p-type AlxGa1-xN layer side is down-mounted and light is emitted from a second main surface, which is the main surface opposite from the first main surface of the GaN substrate. The second main surface of the GaN substrate includes a region on which cavities and projections are formed. Also, the light-emitting device includes an n-electrode formed on the second main surface of the GaN substrate 1 and a protective film formed to cover the side wall of the n-electrode.
摘要翻译： 发光装置配备有GaN衬底; 在GaN衬底的第一主表面侧上的n型Al x Ga 1-x N层; 位于距离GaN衬底更远的p型Al x Ga 1-x N层比n型Al x Ga > 1-x N层; 以及位于n型Al x Ga 1-x N层和p型Al x 1 / x N层之间的多量子阱（MQW） > Ga 1-x N层。 在发光装置中，p型Al x Ga 1-x N层侧被下放，从第二主表面发光， 与GaN衬底的第一主表面相对的主表面。 GaN衬底的第二主表面包括形成空腔和突起的区域。 此外，发光器件包括形成在GaN衬底1的第二主表面上的n电极和形成为覆盖n电极的侧壁的保护膜。
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公开(公告)号：US07491974B2
公开(公告)日：2009-02-17
申请号：US11365642
申请日：2006-02-28
IPC分类号： H01L27/15
CPC分类号： H01L33/22 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device is equipped with a GaN substrate; an n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate than the n-type AlxGa1-xN layer; and a multi-quantum well (MQW) positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light-emitting device, the p-type AlxGa1-xN layer side is down-mounted and light is emitted from a second main surface, which is the main surface opposite from the first main surface of the GaN substrate. The second main surface of the GaN substrate includes a region on which cavities and projections are formed. Also, the light-emitting device includes an n-electrode formed on the second main surface of the GaN substrate 1 and a protective film formed to cover the side wall of the n-electrode.
摘要翻译： 发光装置配备有GaN衬底; 在GaN衬底的第一主表面侧上的n型Al x Ga 1-x N层; 位于比n型Al x Ga 1-x N层更远离GaN衬底的p型Al x Ga 1-x N层; 以及位于n型Al x Ga 1-x N层和p型Al x Ga 1-x N层之间的多量子阱（MQW）。 在发光器件中，p型Al x Ga 1-x N层侧被下放，并且从作为与GaN衬底的第一主表面相对的主表面的第二主表面发射光。 GaN衬底的第二主表面包括形成空腔和突起的区域。 此外，发光器件包括形成在GaN衬底1的第二主表面上的n电极和形成为覆盖n电极的侧壁的保护膜。
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6.发明申请Light emitting device, method for making the same, and nitride semiconductor substrate 有权发光元件及其制造方法以及氮化物半导体基板公开(公告)号：US20060273334A1
公开(公告)日：2006-12-07
申请号：US11362407
申请日：2006-02-24
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/32 , H01L2224/48091 , H01L2224/73265 , H01L2924/01012 , H01L2924/01079 , H01L2924/12041 , H01L2924/00014
摘要： A light-emitting device according to the present invention includes: a GaN substrate 1; a n-type AlxGa1-xN layer 3 on a first main surface side of the GaN substrate 1; a p-type AlxGa1-xN layer 5 positioned further away from the GaN substrate 1 compared to the n-type AlxGa1-xN layer 3; a multi-quantum well (MQW) 4 positioned between the n-type AlxGa1-xN layer 3 and the p-type AlxGa1-xN layer 5. In this light-emitting device, the p-type AlxGa1-xN layer 5 side is down-mounted and light is emitted from the second main surface 1a, which is the main surface of the GaN substrate 1 opposite from the first main surface. Hemispherical projections 82 are formed on the second main surface 1a of the GaN substrate 1.
摘要翻译： 根据本发明的发光器件包括：GaN衬底1; 在GaN衬底1的第一主表面侧上的n型Al x Ga 1-x N层3; 位于更远离GaN衬底1的p型Al x Ga 1-x N层5与n型Al x N层5相比较， Ga 1-x N层3; 位于n型Al x Ga 1-x N层3和p型Al x N层3之间的多量子阱（MQW）4， SUB＆gt; Ga 1-x N层5。 在该发光器件中，p型Al x Ga 1-x N层5侧被下放，并且从第二主表面1a发射光 ，其是与第一主表面相对的GaN衬底1的主表面。 在GaN衬底1的第二主表面1a上形成半球形突起82。
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公开(公告)号：US20050110032A1
公开(公告)日：2005-05-26
申请号：US10904622
申请日：2004-11-19
CPC分类号： H01L33/505 , G02B6/0046 , H01L33/46 , H01L2224/48091 , H01L2924/00014
摘要： A light-emitting diode (1) is furnished with a semiconductor laminate (6), optically reflective layers (17) and (19), an optically reflective film (25), and a phosphorescent plate (27). The laminate (6) is formed by an n-type cladding layer (9), an active layer (11), a p-type cladding layer (13), and a p-type contact layer (15), laminated in order onto a substrate (7). The optically reflective layers (17) and (19) are provided respectively on the p-type contact layer (15) and on the back side (7b) of the substrate (7). The optically reflective film (25) is provided on three side surfaces of the laminate (6). The phosphorescent plate (27) is mounted on a side face, among the side faces of the laminate (6), on which there is no optically reflective film (25). Blue light (L1) output from the active layer (11) is reflected at each of the optically reflective layers, and is gathered on the side face on which the phosphorescent plate (27) is provided. A portion of the blue light (L1) turns into yellow light (2) in the phosphorescent plate (27), and white light derived from the blue light (L1) and yellow light (L2) is emitted.
摘要翻译： 发光二极管（1）配备有半导体层叠体（6），光反射层（17）和（19），光反射膜（25）和磷光板（27）。 层叠体（6）由n型包覆层（9），有源层（11），p型覆盖层（13）和p型接触层（15）依次层叠而形成 衬底（7）。 光反射层（17）和（19）分别设置在基板（7）的p型接触层（15）和背面（7b）上。 光反射膜（25）设置在层叠体（6）的三个侧面上。 磷光板（27）安装在层叠体（6）的没有光反射膜（25）的侧面中的侧面上。 从有源层（11）输出的蓝光（L 1）在每个光反射层被反射，聚集在设置有磷光板（27）的侧面上。 蓝色光（L 1）的一部分在磷光板（27）中变成黄色光（2），发出蓝色光（L 1）和黄色光（L 2）衍生的白色光。
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公开(公告)号：US07476909B2
公开(公告)日：2009-01-13
申请号：US11311638
申请日：2005-12-20
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/22 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/00011 , H01L2924/10155 , H01L2924/10253 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2924/01049 , H01L2924/01004 , H01L2924/01005
摘要： A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlxGa1-xN layer, a p-type AlxGa1-xN layer positioned further than the n-type AlxGa1-xN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ω·cm, the side of p-type AlxGa1-xN layer is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.
摘要翻译： 获得具有简单结构的发光器件，其可以容易地制造，长时间稳定地获得高发光效率，该发光器件包括：GaN衬底作为氮化物半导体衬底，并且在第一主表面上 氮化物半导体衬底，n型Al x Ga 1-x N层，从氮化物半导体衬底观察的位于比n型Al x Ga 1-x N层更远的p型Al x Ga 1-x N层，以及位于n型Al x Ga 1-x N层之间的量子阱 -xN层和p型Al x Ga 1-x N层。 在发光器件中，氮化物半导体衬底的比电阻为0.5Ω·cm以下，p型Al x Ga 1-x N层的侧面朝下地安装，并且从第二主表面1a射出光 与氮化物半导体衬底的第一主表面相对。 氮化物半导体衬底的第二主表面1a具有形成在其中的沟槽。
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公开(公告)号：US20060157717A1
公开(公告)日：2006-07-20
申请号：US11311638
申请日：2005-12-20
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/22 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/00011 , H01L2924/10155 , H01L2924/10253 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2924/01049 , H01L2924/01004 , H01L2924/01005
摘要： A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlxGa1-xN layer, a p-type AlxGa1-xN layer positioned further than the n-type AlxGa1-xN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ω·cm, the side of p-type AlxGa1-xN layer is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.
摘要翻译： 获得具有简单结构的发光器件，其可以容易地制造，长时间稳定地获得高发光效率，该发光器件包括：GaN衬底作为氮化物半导体衬底，并且在第一主表面上 氮化物半导体衬底，n型Al x Ga 1-x N层，p型Al x Ga 1-x N层， x N层比从氮化物半导体衬底观察到的n型Al x Ga 1-x N层更远，并且位于 n型Al x Ga 1-x N层和p型Al x Ga 1-x N层，以及p型Al x Ga 1-x N层， N层。 在发光器件中，氮化物半导体衬底的比电阻为0.5Ω·cm以下，p型Al x Ga 1-x N层的一侧为 并且从与氮化物半导体衬底的第一主表面相对的第二主表面1a发射光。 氮化物半导体衬底的第二主表面1a具有形成在其中的沟槽。
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公开(公告)号：US20100120231A1
公开(公告)日：2010-05-13
申请号：US12529073
申请日：2009-02-12
CPC分类号： H01L21/3081 , H01S5/0425 , H01S5/2086
摘要： A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S10) of forming a GaN-based semiconductor layer, a step (S20) of forming an Al film on the GaN-based semiconductor layer, a step (S30, S40) of forming a mask layer composed of a material having a lower etching rate than that of the material constituting the Al film, a step (S50) of partially removing the Al film and the GaN-based semiconductor layer using the mask layer as a mask to form a ridge portion, a step (S60) of retracting the positions of the side walls at the ends of the Al film from the positions of the side walls of the mask layer, a step (S70) of forming a protection film composed of a material having a lower etching rate than that of the material constituting the Al film on the side surfaces of the ridge portion and on the upper surface of the mask layer, and a step (S80) of removing the Al film to remove the mask layer and the protection film formed on the upper surface of the mask layer.
摘要翻译： 根据本发明的制造半导体器件的方法包括以下步骤：形成GaN基半导体层的步骤（S10），在GaN基半导体层上形成Al膜的步骤（S20）， 形成由具有比构成Al膜的材料的蚀刻速率低的材料构成的掩模层的步骤（S30，S40）;使用该步骤（S50）部分地除去Al膜和GaN基半导体层 掩模层作为掩模以形成脊部;步骤（S60），从掩模层的侧壁的位置缩回Al膜的端部处的侧壁的位置，形成步骤（S70） 由掩模层的侧表面和掩模层的上表面上的蚀刻速率低于构成Al膜的材料的蚀刻速率低的材料形成的保护膜，以及除去Al膜的步骤（S80） 以去除掩模层和形成的保护膜 n掩模层的上表面。
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