摘要:
The present invention relates to a compound represented by the following formula (1): wherein W, X, Y, R1, R2, R33, R34, m and n are as defined in the claims, or a pharmacologically acceptable salt thereof.
摘要:
A reinforcing member is provided at a lower-outside corner of a side-sill reinforcement so as to extend in the vehicle longitudinal direction including a connection portion of the side sill to a center pillar for straining deformation of the corner. A deformation promoting portion which is provided at an upper portion of the side-sill reinforcement at a specified position which corresponds to the connection portion for prompting deformation of the upper portion of the side-sill reinforcement. Accordingly, a lower vehicle-body structure of a vehicle which can properly restrain the side sill and the center pillar from coming toward the vehicle inside at the vehicle side crash can be provided.
摘要:
There is provided a method for preparing an analytical standard used for microbeam X-ray fluorescence analysis which includes: a mixing step A in which an element is added to a base material, and the base material and the element are mixed by stirring to obtain a mixed solution; a deaeration step B in which the mixed solution is deaerated; a freeze step D in which the mixed solution is slowly frozen; and a cutting step F in which a thin section is cut out from the frozen mixed solution. In order to surely remove bubbles from the mixed solution, the deaeration step B may contain a stationary step in which the mixed solution is allowed to stand still at room temperature; or the stationary step includes a removal step in which gas contained in the mixed solution which is allowed to stand still is removed with a suction apparatus.
摘要:
A semiconductor device having lead terminals bent in a J-shape is disclosed. A radiating plate having a recess formed on an outer peripheral portion thereof is exposed to a lower face of a resin member and free ends of outer portions of the lead terminals are positioned in the recess of the radiating plate. The free ends of the outer portions of the lead terminals and the recess of the radiating plate are isolated from each other by projections of the resin member. Since the radiating plate is exposed to the lower face of the resin member, the heat radiating property is high whereas the radiating plate and the lead terminals are not short-circuited to each other at all.
摘要:
A semiconductor device is disclosed wherein a pair of radiating terminals and a plurality of lead terminals are formed from a single lead frame. A hole or holes in each radiating terminal are formed with an equal width and in an equal pitch to those of gaps between the lead terminals, and the opposite sides of each hole of the radiating terminal are connected to each other by a support element. The support elements of the radiating terminals and support elements which interconnect the lead terminals are formed with an equal length and in an equal pitch to allow the support elements to be cut away by a plurality of punches which are arranged in an equal pitch and have an equal width.
摘要:
A plastic-encapsulated semiconductor device is provided, which is capable of efficient heat dissipation without upsizing while preventing the moisture from reaching an IC chip. This device is comprised of an electrically-conductive island having a chip-mounting area, an IC chip fixed on the chip-mounting area of the island, leads electrically connected to bonding pads of the chip through bonding wires, a plastic package for encapsulating the island, the chip, the bonding wires, and inner parts of the leads. The package has an approximately flat bottom face. Outer parts of the leads are protruded from the package and are located in approximately a same plane as the bottom face of the package. The island has an exposition part exposed from the package at a location excluding the chip-mounting area. A lower face of the exposition part of the island is located in approximately a same plane as the bottom face of the package. The chip and the chip-mounting area of the island are entirely buried in the package. Apart of the island excluding the chip-mounting area is bent toward the bottom face of the package to be exposed therefrom.
摘要:
The present invention relates to a compound represented by the following formula (1): wherein W, X, Y, R1, R2, R33, R34, m and n are as defined in the claims, or a pharmacologically acceptable salt thereof.
摘要:
Provided is a vehicle upper structure which is capable of increasing, in a simple manner, a section modulus (resistive force) against a bending moment to be imposed on a roof reinforcement by a swinging phenomenon of a gusset occurring when a side impact load input into a center pillar and a roof side rail member is applied to the roof reinforcement from the gusset during a vehicle side impact event, to allow the load to be effectively dispersed to the roof reinforcement. The vehicle upper structure comprises a roof side rail member 4, a roof reinforcement 15 and a gusset 30, wherein an end of the gusset 30 on a side fastened to the roof reinforcement 15 has a shape which inclines with respect to a line L1 oriented in a vehicle front-rear direction, in top plan view.
摘要:
A hinge reinforcement is provided at a hinge pillar at a specified position which corresponds to an upper door-hinge attachment portion. Attachment portions which extend toward a hinge pillar inner and are attached to this hinge pillar inner are provided at the hinge reinforcement which corresponds to the upper door-hinge attachment portion. A branch frame and a gusset member which transmit an impact load inputted from a front side frame extending in a vehicle longitudinal direction to the attachment portions via the hinge pillar inner are provided so as to extend from the front side frame. Accordingly, the impact load inputted to the vehicle body at the vehicle collision can be properly transmitted to the vehicle rear portion, so that the deformation of the vehicle compartment can be restrained surely.
摘要:
A high-frequency circuit includes a bias circuit to which a gain control voltage is input and which controls gains of transistors arranged in the bias circuit in accordance with the gain control voltage, and a band-switching circuit which switches a band and through which a reference current runs. The band-switching circuit includes two transistors electrically connected in cascode to each other, one of the two transistors which is located downstream of the other has a gate electrically connected to a gain control voltage terminal through which the gain control voltage is input, and each of the two transistors is comprised of a complete enhancement mode field effect transistor. The bias circuit includes a pair of transistors and a band-switching transistor. The band-switching transistor is electrically connected in series to a line through which the gain control voltage is supplied, and the gain control voltage is applied to the pair of transistors through the band-switching circuit.