MAGNETIC TUNNEL JUNCTION CELLS HAVING PERPENDICULAR ANISOTROPY AND ENHANCEMENT LAYER
    1.
    发明申请
    MAGNETIC TUNNEL JUNCTION CELLS HAVING PERPENDICULAR ANISOTROPY AND ENHANCEMENT LAYER 审中-公开
    具有均匀分布和增强层的磁性隧道连接电极

    公开(公告)号:US20120104522A1

    公开(公告)日:2012-05-03

    申请号:US12916738

    申请日:2010-11-01

    IPC分类号: H01L29/82

    摘要: A magnetic tunnel junction cell that includes a ferromagnetic free layer; an enhancement layer having a thickness of at least about 15 Å; an oxide barrier layer; and a ferromagnetic reference layer, wherein the enhancement layer and the oxide barrier layer are positioned between the ferromagnetic reference layer and ferromagnetic free layer and the oxide barrier layer is positioned adjacent the ferromagnetic reference layer, and wherein the ferromagnetic free layer, the ferromagnetic reference layer, and the enhancement layer all have magnetization orientations that are out-of-plane

    摘要翻译: 包括铁磁自由层的磁性隧道结电池; 增强层,其厚度至少约为15埃; 氧化物阻挡层; 和铁磁参考层,其中增强层和氧化物阻挡层位于铁磁参考层和铁磁性自由层之间,氧化物阻挡层位于铁磁参考层附近,其中铁磁性自由层铁磁参考层 ,增强层都具有非平面的磁化方向

    MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS
    2.
    发明申请
    MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS 有权
    具有正交磁化定向方向的参考层的磁性堆栈

    公开(公告)号:US20110260274A1

    公开(公告)日:2011-10-27

    申请号:US13176029

    申请日:2011-07-05

    IPC分类号: H01L29/82

    摘要: A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

    摘要翻译: 磁性电池包括具有自由磁化取向方向的铁磁自由层和具有与自由磁化取向方向平行或反平行的第一参考磁化取向方向的第一铁磁性固定参考层。 第一氧化物阻挡层位于铁磁性自由层和第一铁磁性固定基准层之间。 磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向的第二铁磁性固定参考层。 铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

    Magnetic stack having reference layers with orthogonal magnetization orientation directions
    3.
    发明授权
    Magnetic stack having reference layers with orthogonal magnetization orientation directions 有权
    具有正交磁化取向方向的参考层的磁性堆叠

    公开(公告)号:US08519498B2

    公开(公告)日:2013-08-27

    申请号:US13613002

    申请日:2012-09-13

    IPC分类号: H01L29/82 G11C11/02

    摘要: A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

    摘要翻译: 磁性电池包括具有自由磁化取向方向的铁磁自由层和具有与自由磁化取向方向平行或反平行的第一参考磁化取向方向的第一铁磁性固定参考层。 第一氧化物阻挡层位于铁磁性自由层和第一铁磁性固定基准层之间。 磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向的第二铁磁性固定参考层。 铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

    MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS
    7.
    发明申请
    MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS 有权
    具有正交磁化定向方向的参考层的磁性堆栈

    公开(公告)号:US20130001720A1

    公开(公告)日:2013-01-03

    申请号:US13613002

    申请日:2012-09-13

    IPC分类号: H01L29/82

    摘要: A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

    摘要翻译: 磁性电池包括具有自由磁化取向方向的铁磁自由层和具有与自由磁化取向方向平行或反平行的第一参考磁化取向方向的第一铁磁性固定参考层。 第一氧化物阻挡层位于铁磁性自由层和第一铁磁性固定基准层之间。 磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向的第二铁磁性固定参考层。 铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

    Magnetic stack having reference layers with orthogonal magnetization orientation directions
    8.
    发明授权
    Magnetic stack having reference layers with orthogonal magnetization orientation directions 有权
    具有正交磁化取向方向的参考层的磁性堆叠

    公开(公告)号:US08294227B2

    公开(公告)日:2012-10-23

    申请号:US13176029

    申请日:2011-07-05

    IPC分类号: H01L29/82 G11C11/02

    摘要: A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

    摘要翻译: 磁性电池包括具有自由磁化取向方向的铁磁自由层和具有与自由磁化取向方向平行或反平行的第一参考磁化取向方向的第一铁磁性固定参考层。 第一氧化物阻挡层位于铁磁性自由层和第一铁磁性固定基准层之间。 磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向的第二铁磁性固定参考层。 铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

    Magnetic stack having reference layers with orthogonal magnetization orientation directions
    9.
    发明授权
    Magnetic stack having reference layers with orthogonal magnetization orientation directions 有权
    具有正交磁化取向方向的参考层的磁性堆叠

    公开(公告)号:US07999338B2

    公开(公告)日:2011-08-16

    申请号:US12502209

    申请日:2009-07-13

    IPC分类号: H01L29/82 G11C11/02

    摘要: A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

    摘要翻译: 磁性电池包括具有自由磁化取向方向的铁磁自由层和具有与自由磁化取向方向平行或反平行的第一参考磁化取向方向的第一铁磁性固定参考层。 第一氧化物阻挡层位于铁磁性自由层和第一铁磁性固定基准层之间。 磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向的第二铁磁性固定参考层。 铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。