公开(公告)号：US11616136B2

公开(公告)日：2023-03-28

申请号：US17180048

申请日：2021-02-19

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Evan Jones ,  Dan Namishia ,  Chris Hardiman ,  Fabian Radulescu ,  Terry Alcorn ,  Scott Sheppard ,  Bruce Schmukler

IPC: H01L21/00 ,  H01L29/08 ,  H01L29/778 ,  H01L21/285 ,  H01L21/306 ,  H01L21/765 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H03F1/02 ,  H03F3/21

Abstract: A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.

公开(公告)号：US11502178B2

公开(公告)日：2022-11-15

申请号：US17081476

申请日：2020-10-27

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Jia Guo ,  Terry Alcorn ,  Fabian Radulescu ,  Scott Sheppard

IPC: H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L29/778

Abstract: A transistor device includes a semiconductor layer, a surface dielectric layer on the semiconductor layer, and at least a portion of a gate on the surface dielectric layer. The surface dielectric layer includes an aperture therein that is laterally spaced apart from the gate. The transistor device includes an interlayer dielectric layer on the surface dielectric layer, and a field plate on the interlayer dielectric layer. The field plate is laterally spaced apart from the gate, and at least a portion of the field plate includes a recessed portion above the aperture in the surface dielectric layer.

公开(公告)号：US11769768B2

公开(公告)日：2023-09-26

申请号：US16889432

申请日：2020-06-01

Applicant: Wolfspeed, Inc.

Inventor： Terry Alcorn ,  Daniel Namishia ,  Fabian Radulescu

IPC: H01L27/06 ,  H01L21/683 ,  H01L21/768 ,  H01L21/8258 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L27/0694 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/8258 ,  H01L23/481 ,  H01L23/498 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L27/0605 ,  H01L2224/1357 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/73257 ,  H01L2924/1421

Abstract: An integrated circuit device includes a radio frequency transistor amplifier die having a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and includes a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells. At least one passive electronic component is provided on the second surface of the die and is electrically connected to at least one of the terminals, for example, by at least one conductive via. One or more conductive pillar structures may protrude from the first surface of the die to provide electrical connections to one or more of the terminals.

公开(公告)号：US11842997B2

公开(公告)日：2023-12-12

申请号：US17699680

申请日：2022-03-21

Applicant: Wolfspeed, Inc.

Inventor： Terry Alcorn ,  Daniel Namishia ,  Fabian Radulescu

IPC: H01L27/06 ,  H01L21/683 ,  H01L21/768 ,  H01L21/8258 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L27/0694 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/8258 ,  H01L23/481 ,  H01L23/498 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L27/0605 ,  H01L2224/1357 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/73257 ,  H01L2924/1421

Abstract: An integrated circuit device includes a radio frequency transistor amplifier die having a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and includes a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells. At least one passive electronic component is provided on the second surface of the die and is electrically connected to at least one of the terminals, for example, by at least one conductive via. One or more conductive pillar structures may protrude from the first surface of the die to provide electrical connections to one or more of the terminals.

公开(公告)号：US11658234B2

公开(公告)日：2023-05-23

申请号：US17325576

申请日：2021-05-20

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Terry Alcorn ,  Dan Namishia ,  Jia Guo ,  Matt King ,  Saptharishi Sriram ,  Jeremy Fisher ,  Fabian Radulescu ,  Scott Sheppard ,  Yueying Liu

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/40

CPC classification number: H01L29/7786 ,  H01L29/402 ,  H01L29/66462

Abstract: A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, a source contact and a drain contact on the barrier layer, an insulating layer on the semiconductor layer between the source contact and the drain contact, and a gate contact on the insulating layer. The gate contact includes a central portion that extends through the insulating layer and contacts the barrier layer and a drain side wing that extends laterally from the central portion of the gate toward the drain contact by a distance ΓD. The drain side wing of the gate contact is spaced apart from the barrier layer by a distance d1 that is equal to a thickness of the insulating layer. The distance ΓD is less than about 0.3 μm, and the distance d1 is less than about 80 nm.

公开(公告)号：US11646310B2

公开(公告)日：2023-05-09

申请号：US16889432

申请日：2020-06-01

Applicant: Wolfspeed, Inc.

Inventor： Terry Alcorn ,  Daniel Namishia ,  Fabian Radulescu

IPC: H01L27/06 ,  H01L21/683 ,  H01L21/768 ,  H01L21/8258 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L27/0694 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/8258 ,  H01L23/481 ,  H01L23/498 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L27/0605 ,  H01L2224/1357 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/73257 ,  H01L2924/1421

Abstract: An integrated circuit device includes a radio frequency transistor amplifier die having a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and includes a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells. At least one passive electronic component is provided on the second surface of the die and is electrically connected to at least one of the terminals, for example, by at least one conductive via. One or more conductive pillar structures may protrude from the first surface of the die to provide electrical connections to one or more of the terminals.

公开(公告)号：US20220208758A1

公开(公告)日：2022-06-30

申请号：US17699680

申请日：2022-03-21

Applicant: Wolfspeed, Inc.

Inventor： Terry Alcorn ,  Daniel Namishia ,  Fabian Radulescu

IPC: H01L27/06 ,  H01L21/683 ,  H01L21/768 ,  H01L21/8258 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00

Abstract: An integrated circuit device includes a radio frequency transistor amplifier die having a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and includes a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells. At least one passive electronic component is provided on the second surface of the die and is electrically connected to at least one of the terminals, for example, by at least one conductive via. One or more conductive pillar structures may protrude from the first surface of the die to provide electrical connections to one or more of the terminals.

公开(公告)号：US20220130966A1

公开(公告)日：2022-04-28

申请号：US17081476

申请日：2020-10-27

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Jia Guo ,  Terry Alcorn ,  Fabian Radulescu ,  Scott Sheppard

IPC: H01L29/40 ,  H01L29/417

Abstract: A transistor device includes a semiconductor layer, a surface dielectric layer on the semiconductor layer, and at least a portion of a gate on the surface dielectric layer. The surface dielectric layer includes an aperture therein that is laterally spaced apart from the gate. The transistor device includes an interlayer dielectric layer on the surface dielectric layer, and a field plate on the interlayer dielectric layer. The field plate is laterally spaced apart from the gate, and at least a portion of the field plate includes a recessed portion above the aperture in the surface dielectric layer.