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公开(公告)号：US12125512B2
公开(公告)日：2024-10-22
申请号：US17854568
申请日：2022-06-30
Applicant: Western Digital Technologies, Inc.
Inventor： Quang Le , Cherngye Hwang , Brian R. York , Randy G. Simmons , Xiaoyong Liu , Kuok San Ho , Hisashi Takano , Michael A. Gribelyuk , Xiaoyu Xu
IPC: G11C11/16 , G01R33/09 , G11B5/39 , H10B61/00 , H10N50/10 , H10N50/85 , H10N52/00 , H10N52/01 , H10N52/80
CPC classification number: G11C11/161 , G11C11/1673 , G11C11/1675 , H10B61/00 , H10N50/10 , H10N50/85 , H10N52/00 , H10N52/01 , H10N52/80
Abstract: The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.
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2.发明授权公开(公告)号：US12033675B2
公开(公告)日：2024-07-09
申请号：US17956786
申请日：2022-09-29
Applicant: Western Digital Technologies, Inc.
Inventor： Susumu Okamura , Quang Le , Brian R. York , Cherngye Hwang , Randy G. Simmons , Kuok San Ho , Hisashi Takano
IPC: G11B5/31 , G11B5/235 , G11B5/37 , H01F10/32 , H10B61/00 , H10N50/85 , H10N52/00 , H10N52/80 , C22C19/07 , G11B5/00 , G11B5/39
CPC classification number: G11B5/3146 , G11B5/235 , G11B5/3133 , G11B5/314 , G11B5/37 , H01F10/329 , H10B61/00 , H10N50/85 , H10N52/00 , H10N52/80 , C22C19/07 , G11B2005/0024 , G11B5/39
Abstract: Embodiments of the present disclosure relate to a cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices. In one or more embodiments, the CoB layer is part of a spin-orbit torque (SOT) device. In one or more embodiments, the SOT device is part of an SOT based sensor, an SOT based writer, a memory device (such as a magnetoresistive random-access memory (MRAM) device), and/or a storage device (such as a hard disk drive (HDD) or a tape drive). In one embodiment, an SOT device includes a seed layer, and a cap layer spaced from the seed layer. The SOT device includes a spin-orbit torque (SOT) layer, and a nano layer (NL) between the seed layer and the cap layer. The SOT device includes a cobalt-boron (CoB) layer between the seed layer and the cap layer, and the CoB layer is ferromagnetic.
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公开(公告)号：US11495741B2
公开(公告)日：2022-11-08
申请号：US16917334
申请日：2020-06-30
Applicant: Western Digital Technologies, Inc.
Inventor： Brian R. York , Cherngye Hwang , Alan Spool , Michael Gribelyuk , Quang Le
Abstract: A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.
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公开(公告)号：US12207563B2
公开(公告)日：2025-01-21
申请号：US17951596
申请日：2022-09-23
Applicant: Western Digital Technologies, Inc.
Inventor： Susumu Okamura , James Mac Freitag , Yuankai Zheng , Brian R. York
Abstract: The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases exchange coupling field, and in turn, less magnetic noise of such devices. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure which may grow epitaxial on BCC (110) or FCC (111) textures, meaning that the (110) or (111) plane is parallel to the surface of MR device substrate. Further, amorphous layers may be inserted into the device structure to reset the growth texture of the device to a (001), (110), or (111) texture in order to promote the growth of tunneling barrier layers or antiferromagnetic (AF) pinning layers.
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5.发明授权公开(公告)号：US11694713B2
公开(公告)日：2023-07-04
申请号：US17100199
申请日：2020-11-20
Inventor： Quang Le , Cherngye Hwang , Brian R. York , Thao A. Nguyen , Zheng Gao , Kuok San Ho , Pham Nam Hai
CPC classification number: G11B5/11 , G11B5/147 , H01F10/329 , H01F10/3254 , H01F10/3272 , H10B61/00 , H10N50/85 , H10N52/00 , H10N52/80 , G11B2005/0024
Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.
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Patent Agency Ranking
公开(公告)号：US12106784B2
公开(公告)日：2024-10-01
申请号：US18227537
申请日：2023-07-28
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai Zheng , Susumu Okamura , Brian R. York , Zhitao Diao , James Mac Freitag
CPC classification number: G11B5/3146 , G11B5/314 , G11B5/3929
Abstract: Embodiments of the present disclosure generally relate to a read sensor utilized in a read head. The read sensor comprises an amorphous break layer disposed on a shield, a seed layer disposed on the amorphous break layer, a first ferromagnetic layer disposed on the seed layer, a barrier layer disposed on the first ferromagnetic layer, and a second ferromagnetic layer disposed on the barrier layer. The amorphous break layer comprises CoFeBTa, the seed layer comprises RuAl, and the barrier layer comprises a semiconductor material, such as ZnSe, ZnTe, ZnO, CuSe, or CuInGaSe. The semiconductor barrier layer reduces the resistance-area product of the read sensor. The amorphous break layer breaks the texture between the shield, which has a FCC texture, and the seed layer, which has a BCC texture. The BCC texture of the seed layer is then inherited by the remaining layers disposed over the seed layer.
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公开(公告)号：US11875827B2
公开(公告)日：2024-01-16
申请号：US17705147
申请日：2022-03-25
Inventor： Quang Le , Brian R. York , Xiaoyong Liu , Son T. Le , Cherngye Hwang , Michael A. Gribelyuk , Xiaoyu Xu , Kuok San Ho , Hisashi Takano , Julian Sasaki , Huy H. Ho , Khang H. D. Nguyen , Nam Hai Pham
CPC classification number: G11B5/39 , G11B2005/0021 , G11B2005/3996
Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.
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公开(公告)号：US20230084970A1
公开(公告)日：2023-03-16
申请号：US17472019
申请日：2021-09-10
Applicant: Western Digital Technologies, Inc.
Inventor： Susumu Okamura , Christian Kaiser , Brian R. York
Abstract: A tunneling magnetoresistance (TMR) device has an improved seed layer for the lower or first ferromagnetic layer that eliminates the need for boron in the two ferromagnetic layers. The seed layer, for example a RuAl alloy, has a B2 crystalline structure with (001) texture when deposited on an amorphous pre-seed layer, meaning that the (001) plane is parallel to the surface of the TMR device substrate. The subsequently deposited first ferromagnetic layer, like a CoFe alloy, and the tunneling barrier layer, typically MgO, inherit the (001) texture of the seed layer.
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公开(公告)号：US12136446B2
公开(公告)日：2024-11-05
申请号：US18226625
申请日：2023-07-26
Applicant: Western Digital Technologies, Inc.
Inventor： Quang Le , Rohan Babu Nagabhirava , Xiaoyong Liu , Brian R. York , Son T. Le , Cherngye Hwang , Kuok San Ho , Hisashi Takano
Abstract: The present disclosure generally relates to a two dimensional magnetic recording (TDMR) spin-orbit torque (SOT) read head comprising bismuth antimony (BiSb) layers. The read head comprises a lower reader comprising a first SOT stack and an upper reader comprising a second SOT stack. The first SOT stack and the second SOT stack each individually comprise a BiSb layer recessed from a media facing surface (MFS) and a free layer exposed at the MFS. The BiSb layers of each SOT stack are recessed from the MFS a distance of about 5 nm to about 20 nm, the distance being less than a length of the free layers. In one embodiment, the lower reader and the upper reader share a current path. In another embodiment, the lower reader and the upper reader have separate current paths.
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公开(公告)号：US12125508B2
公开(公告)日：2024-10-22
申请号：US18244555
申请日：2023-09-11
Applicant: Western Digital Technologies, Inc.
Inventor： Xiaoyong Liu , Zhanjie Li , Quang Le , Brian R. York , Cherngye Hwang , Kuok San Ho , Hisashi Takano
CPC classification number: G11B5/3909 , G11B5/11 , G11B5/3912 , G11B5/3932 , G11B5/3967 , G11B2005/3996
Abstract: The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.
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