Manufacturing method of array substrate and array substrate

    公开(公告)号:US11018165B2

    公开(公告)日:2021-05-25

    申请号:US16641663

    申请日:2019-11-06

    Abstract: A manufacturing method of an array substrate and the array substrate are provided. The method comprises: forming an active layer on a substrate; forming an insulation layer on the active layer; forming a first metal layer on the insulation layer; forming an interlayer dielectric layer and a pixel electrode layer on the first metal layer by a same mask; forming a second metal layer on the interlayer dielectric layer, wherein the second metal layer comprises a source electrode, a drain electrode, and a touch signal line; and forming a patterned protective layer and a patterned common electrode layer on the second metal layer.

    Display panel and method of manufacturing the same

    公开(公告)号:US11521993B2

    公开(公告)日:2022-12-06

    申请号:US16323523

    申请日:2018-09-25

    Abstract: A display panel and method of manufacturing the same are provided. The method of manufacturing the display panel includes the steps of providing a substrate, forming a gate on the substrate, forming a gate insulating layer on the gate and the substrate, forming a polysilicon layer on the gate insulating layer, performing a first gray-scale mask process on the polysilicon layer to form a source region, a drain region and an active region located between the source region and the drain region by the polysilicon layer, forming an interlayer dielectric layer on the gate insulating layer and the polysilicon layer, forming a first electrode layer on the interlayer dielectric layer, performing a second gray-scale mask process on the first electrode layer and the interlayer dielectric layer.

    TFT SUBSTRATE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210098582A1

    公开(公告)日:2021-04-01

    申请号:US16097838

    申请日:2018-09-14

    Abstract: The present invention teaches a TFT substrate manufacturing method and a TFT substrate. The method configures contact region vias in the source/drain contact regions at two ends of the active layer, provides buffer layer troughs in the buffer layer beneath the contact region vias, and forms undercut structure between the buffer layer troughs and the active layer around the contact region vias, thereby separating the transparent conductive layer at the contact region vias, and extending the source/drain electrodes to contact the source/drain contact regions of the active layer from below through the buffer layer troughs. The present invention therefore prevents the occurrence of Schottky contact barrier resulted from the contact between poly-Si and ITO in the 7-mask process by letting the source/drain electrodes to directly contact and form ohmic contact with the source/drain contact regions of the active layer, thereby enhancing the electronic mobility of TFT devices.

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