公开(公告)号：US20100037941A1

公开(公告)日：2010-02-18

申请号：US12536227

申请日：2009-08-05

申请人： WILLIAM J. BORLAND ,  Jon-Paul Maria

发明人： WILLIAM J. BORLAND ,  Jon-Paul Maria

IPC分类号： H01L31/07 ,  H01L31/00 ,  H01L31/0232 ,  H01L31/028 ,  H01B1/22

CPC分类号： H01L31/022425 ,  H01B1/04 ,  Y02E10/50

摘要： Methods and compositions for making photovoltaic devices are provided. A metal that is reactive with silicon is placed in contact with the n-type silicon layer of a silicon substrate. The silicon substrate and reactive metal are fired to form a silicide contact to the n-type silicon layer. A conductive metal electrode is placed in contact with the silicide contact. A silicon solar cell made by such methods is also provided.

摘要翻译： 提供了制造光伏器件的方法和组成。 与硅反应的金属与硅衬底的n型硅层接触。 烧制硅衬底和反应性金属以形成与n型硅层的硅化物接触。 导电金属电极放置成与硅化物接触接触。 还提供了通过这种方法制造的硅太阳能电池。

公开(公告)号：US20130000709A1

公开(公告)日：2013-01-03

申请号：US13615767

申请日：2012-09-14

申请人： WILLIAM J. BORLAND ,  Jon-Paul Maria

发明人： WILLIAM J. BORLAND ,  Jon-Paul Maria

IPC分类号： H01L31/07

CPC分类号： H01L31/022425 ,  H01B1/06 ,  H01L24/04 ,  H01L24/80 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01064 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01105 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  Y02E10/50 ,  H01L2924/00

摘要： Photovoltaic cells including silicon solar cells are provided. A silicon substrate having an n-type silicon layer is provided with a silicon nitride layer, a reactive metal in contact with said silicon nitride layer, and a non-reactive metal in contact with the reactive metal. This assembly is fired to form a low Shottky barrier height contact comprised of metal nitride, and optionally metal silicide, on the silicon substrate, and a conductive metal electrode in contact with said low Shottky barrier height contact. The reactive metal may be titanium, zirconium, hafnium, vanadium, niobium, and tantalum, and combinations thereof, and the non-reactive metal may be silver, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, nickel, phosphorus, gold, cadmium, berrylium, and combinations thereof.

摘要翻译： 提供了包括硅太阳能电池的光伏电池。 具有n型硅层的硅衬底设置有氮化硅层，与所述氮化硅层接触的反应性金属和与反应性金属接触的非反应性金属。 烧结该组件以在硅衬底上形成由金属氮化物和任选的金属硅化物构成的低肖特基势垒高度接触，以及与所述低肖特基势垒高度接触部接触的导电金属电极。 活性金属可以是钛，锆，铪，钒，铌和钽及其组合，非反应性金属可以是银，锡，铋，铅，锑，砷，铟，锌，锗，镍， 磷，金，镉，铍及其组合。

公开(公告)号：US20080297274A1

公开(公告)日：2008-12-04

申请号：US12188271

申请日：2008-08-08

申请人： WILLIAM J. BORLAND ,  G. Sidney Cox ,  David Ross McGregor

发明人： WILLIAM J. BORLAND ,  G. Sidney Cox ,  David Ross McGregor

IPC分类号： H03H7/00 ,  H01G4/00

CPC分类号： H05K1/167 ,  H05K1/162 ,  H05K3/429 ,  H05K2201/0154 ,  H05K2201/0355 ,  H05K2201/09309 ,  H05K2201/09672 ,  H05K2201/09763 ,  H05K2203/0361 ,  H05K2203/1461 ,  Y10T29/435

摘要： This invention relates to a capacitive/resistive device, which may be embedded within a layer of a printed wiring board. Embedding the device conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability. More specifically, the device, comprises a first metallic foil; a second metallic foil; a first electrode formed from the first metallic foil; a dielectric disposed over the first electrode; a resistor element formed on and adjacent to the dielectric; a conductive trace; and a second electrode formed from the second metallic foil and disposed over the dielectric and in electrical contact with the resistor element, wherein the dielectric is disposed between the first electrode and the second electrode and wherein said dielectric comprises an unfilled polymer of dielectric constant less than 4.0.

摘要翻译： 本发明涉及可以嵌入在印刷线路板的层内的电容/电阻装置。 嵌入器件节省了电路板表面的空间，并减少了焊接连接的数量，从而提高了可靠性。 更具体地，该装置包括第一金属箔; 第二金属箔; 由所述第一金属箔形成的第一电极; 设置在所述第一电极上的电介质; 形成在电介质上并与电介质相邻的电阻元件; 导电迹线 以及由所述第二金属箔形成并且设置在所述电介质上并与所述电阻元件电接触的第二电极，其中所述电介质设置在所述第一电极和所述第二电极之间，并且其中所述电介质包括介电常数小于 4.0。