公开(公告)号：US08710355B2

公开(公告)日：2014-04-29

申请号：US12617929

申请日：2009-11-13

申请人： William J. Borland ,  Howard David Glicksman ,  Jon-Paul Maria

发明人： William J. Borland ,  Howard David Glicksman ,  Jon-Paul Maria

IPC分类号： H01L31/042

CPC分类号： H01L31/022425 ,  H01L21/28537 ,  Y02E10/50

摘要： Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having p-type silicon base and an n-type silicon layer is provided with a silicon nitride layer, an exchange metal in contact with the silicon nitride layer, and a non-exchange metal in contact with the exchange metal. This assembly is fired to form a metal silicide contact on the silicon substrate, and a conductive metal electrode in contact with the metal silicide contact. The exchange metal is from nickel, cobalt, iron, manganese, molybdenum, and combinations thereof, and the non-exchange metal is from silver, copper, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, gold, cadmium, beryllium, and combinations thereof.

摘要翻译： 提供了包括硅太阳能电池的光伏电池，以及用于制造这种光伏电池的方法和组合物。 具有p型硅基和n型硅层的硅衬底设置有氮化硅层，与氮化硅层接触的交换金属和与交换金属接触的非交换金属。 烧结该组件以在硅衬底上形成金属硅化物接触，以及与金属硅化物接触接触的导电金属电极。 交换金属来自镍，钴，铁，锰，钼及其组合，非交换金属来自银，铜，锡，铋，铅，锑，砷，铟，锌，锗，金，镉 ，铍及其组合。

公开(公告)号：US20100154875A1

公开(公告)日：2010-06-24

申请号：US12617929

申请日：2009-11-13

申请人： William J. Borland ,  Howard David Glicksman ,  Jon-Paul Maria

发明人： William J. Borland ,  Howard David Glicksman ,  Jon-Paul Maria

IPC分类号： H01L31/04 ,  H01L31/18 ,  H01B1/22

CPC分类号： H01L31/022425 ,  H01L21/28537 ,  Y02E10/50

摘要： Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having p-type silicon base and an n-type silicon layer is provided with a silicon nitride layer, an exchange metal in contact with the silicon nitride layer, and a non-exchange metal in contact with the exchange metal. This assembly is fired to form a metal silicide contact on the silicon substrate, and a conductive metal electrode in contact with the metal silicide contact. The exchange metal is from nickel, cobalt, iron, manganese, molybdenum, and combinations thereof, and the non-exchange metal is from silver, copper, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, gold, cadmium, berrylium, and combinations thereof.

摘要翻译： 提供了包括硅太阳能电池的光伏电池，以及用于制造这种光伏电池的方法和组合物。 具有p型硅基和n型硅层的硅衬底设置有氮化硅层，与氮化硅层接触的交换金属和与交换金属接触的非交换金属。 烧结该组件以在硅衬底上形成金属硅化物接触，以及与金属硅化物接触接触的导电金属电极。 交换金属来自镍，钴，铁，锰，钼及其组合，非交换金属来自银，铜，锡，铋，铅，锑，砷，铟，锌，锗，金，镉 ，berrylium及其组合。

公开(公告)号：US20060287188A1

公开(公告)日：2006-12-21

申请号：US11157621

申请日：2005-06-21

申请人： William Borland ,  Ian Burn ,  Jon Ihlefeld ,  Jon-Paul Maria ,  Seigi Suh

发明人： William Borland ,  Ian Burn ,  Jon Ihlefeld ,  Jon-Paul Maria ,  Seigi Suh

IPC分类号： C04B35/00

CPC分类号： H01L21/02197 ,  C01G23/006 ,  C01P2004/82 ,  C01P2006/40 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02337 ,  H01L21/31691 ,  H05K1/162 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0355 ,  Y10T29/435 ,  Y10T29/4913 ,  Y10T428/31678

摘要： The present invention is directed to a dielectric thin film composition comprising: (1) one or more barium/titanium-containing selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in (2) organic medium; and wherein said thin film composition is doped with 0.002 to 0.05 atom percent of a manganese-containing additive.

摘要翻译： 本发明涉及一种电介质薄膜组合物，其包含：（1）选自（a）钛酸钡的一种或多种钡/钛，（b）在焙烧期间可形成钛酸钡的任何组合物，和（c） 的; 溶于（2）有机介质; 并且其中所述薄膜组合物掺杂0.002至0.05原子％的含锰添加剂。

公开(公告)号：US06841080B2

公开(公告)日：2005-01-11

申请号：US10352483

申请日：2003-01-28

申请人： Angus Kingon ,  Gregory J. Dunn ,  Stephen Streiffer ,  Kevin Cheek ,  Min-Xian Zhang ,  Jon-Paul Maria ,  Jovica Savic

发明人： Angus Kingon ,  Gregory J. Dunn ,  Stephen Streiffer ,  Kevin Cheek ,  Min-Xian Zhang ,  Jon-Paul Maria ,  Jovica Savic

IPC分类号： C23C28/00 ,  H01G4/12 ,  H05K1/16 ,  H01G13/00 ,  H01G4/00 ,  H01G5/00 ,  H01G7/00 ,  H01G9/00

CPC分类号： H05K1/162 ,  H01G4/1218 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0355 ,  H05K2201/09509 ,  H05K2203/121 ,  Y10T29/417

摘要： A dielectric film is formed on a free-standing conductive metal layer to form a multi-layer foil comprising a conductive metal layer, a barrier layer and a dielectric oxide layer. Such multi-layer foils are mechanically flexible, and useful for the manufacture of capacitors. Examples of barrier layers include Ni—P or Ni—Cr alloys. After a second layer of conductive metal is deposited on a dielectric oxide surface opposing the first conductive metal layer, the resulting capacitor foil is processed into a capacitor. The resulting capacitor is a surface mounted capacitor or is formed as a integrated or embedded capacitor within a circuit board.

摘要翻译： 在独立的导电金属层上形成电介质膜以形成包含导电金属层，阻挡层和电介质氧化物层的多层箔。 这种多层箔是机械灵活的，并且可用于制造电容器。 阻挡层的实例包括Ni-P或Ni-Cr合金。 在与第一导电金属层相对的电介质氧化物表面上沉积第二层导电金属之后，将所得电容器箔加工成电容器。 所得到的电容器是表面安装的电容器，或者形成为电路板内的集成或嵌入式电容器。

公开(公告)号：US06541137B1

公开(公告)日：2003-04-01

申请号：US09629504

申请日：2000-07-31

申请人： Angus Kingon ,  Gregory J. Dunn ,  Stephen Streiffer ,  Kevin Cheek ,  Min-Xian Zhang ,  Jon-Paul Maria ,  Jovica Savic

发明人： Angus Kingon ,  Gregory J. Dunn ,  Stephen Streiffer ,  Kevin Cheek ,  Min-Xian Zhang ,  Jon-Paul Maria ,  Jovica Savic

IPC分类号： B32B900

CPC分类号： H05K1/162 ,  H01G4/1218 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0355 ,  H05K2201/09509 ,  H05K2203/121 ,  Y10T29/417

摘要： A dielectric film is formed on a free-standing conductive metal layer to form a multi-layer foil comprising a conductive metal layer, a barrier layer and a dielectric oxide layer. Such multi-layer foils are mechanically flexible, and useful for the manufacture of capacitors. Examples of barrier layers include Ni—P or Ni—Cr alloys. After a second layer of conductive metal is deposited on a dielectric oxide surface opposing the first conductive metal layer, the resulting capacitor foil is processed into a capacitor. The resulting capacitor is a surface mounted capacitor or is formed as a integrated or embedded capacitor within a circuit board.

摘要翻译： 在独立的导电金属层上形成电介质膜以形成包含导电金属层，阻挡层和电介质氧化物层的多层箔。 这种多层箔是机械灵活的，并且可用于制造电容器。 阻挡层的实例包括Ni-P或Ni-Cr合金。 在与第一导电金属层相对的电介质氧化物表面上沉积第二层导电金属之后，将所得电容器箔加工成电容器。 所得到的电容器是表面安装的电容器，或者形成为电路板内的集成或嵌入式电容器。

公开(公告)号：US20050011857A1

公开(公告)日：2005-01-20

申请号：US10621796

申请日：2003-07-17

申请人： William Borland ,  Jon Ihlefeld ,  Angus Kingon ,  Jon-Paul Maria

发明人： William Borland ,  Jon Ihlefeld ,  Angus Kingon ,  Jon-Paul Maria

IPC分类号： H01G4/12 ,  H05K1/16 ,  H05K3/46 ,  H01B13/00

CPC分类号： H05K1/162 ,  H01G4/1218 ,  H05K3/4652 ,  H05K2201/0175 ,  H05K2201/0355 ,  H05K2201/09509 ,  H05K2203/125

摘要： Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of copper foil substrates, and at low oxygen partial pressures.

摘要翻译： 电介质形成具有高介电常数，低损耗切线和其它所需的电学和物理性能。 电介质在允许使用铜箔衬底的温度下和在低氧分压下进行退火。

公开(公告)号：US20130000709A1

公开(公告)日：2013-01-03

申请号：US13615767

申请日：2012-09-14

申请人： WILLIAM J. BORLAND ,  Jon-Paul Maria

发明人： WILLIAM J. BORLAND ,  Jon-Paul Maria

IPC分类号： H01L31/07

CPC分类号： H01L31/022425 ,  H01B1/06 ,  H01L24/04 ,  H01L24/80 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01064 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01105 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  Y02E10/50 ,  H01L2924/00

摘要： Photovoltaic cells including silicon solar cells are provided. A silicon substrate having an n-type silicon layer is provided with a silicon nitride layer, a reactive metal in contact with said silicon nitride layer, and a non-reactive metal in contact with the reactive metal. This assembly is fired to form a low Shottky barrier height contact comprised of metal nitride, and optionally metal silicide, on the silicon substrate, and a conductive metal electrode in contact with said low Shottky barrier height contact. The reactive metal may be titanium, zirconium, hafnium, vanadium, niobium, and tantalum, and combinations thereof, and the non-reactive metal may be silver, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, nickel, phosphorus, gold, cadmium, berrylium, and combinations thereof.

摘要翻译： 提供了包括硅太阳能电池的光伏电池。 具有n型硅层的硅衬底设置有氮化硅层，与所述氮化硅层接触的反应性金属和与反应性金属接触的非反应性金属。 烧结该组件以在硅衬底上形成由金属氮化物和任选的金属硅化物构成的低肖特基势垒高度接触，以及与所述低肖特基势垒高度接触部接触的导电金属电极。 活性金属可以是钛，锆，铪，钒，铌和钽及其组合，非反应性金属可以是银，锡，铋，铅，锑，砷，铟，锌，锗，镍， 磷，金，镉，铍及其组合。

公开(公告)号：US08294024B2

公开(公告)日：2012-10-23

申请号：US12536238

申请日：2009-08-05

申请人： William J. Borland ,  Jon-Paul Maria

发明人： William J. Borland ,  Jon-Paul Maria

IPC分类号： H01L31/07

CPC分类号： H01L31/022425 ,  H01B1/06 ,  H01L24/04 ,  H01L24/80 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01064 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01105 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  Y02E10/50 ,  H01L2924/00

摘要： Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having an n-type silicon layer is provided with a silicon nitride layer, a reactive metal in contact with said silicon nitride layer, and a non-reactive metal in contact with the reactive metal. This assembly is fired to form a low Schottky barrier height contact comprised of metal nitride, and optionally metal silicide, on the silicon substrate, and a conductive metal electrode in contact with said low Schottky barrier height contact. The reactive metal may be titanium, zirconium, hafnium, vanadium, niobium, and tantalum, and combinations thereof, and the non-reactive metal may be silver, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, nickel, phosphorus, gold, cadmium, berrylium, and combinations thereof.

摘要翻译： 提供了包括硅太阳能电池的光伏电池，以及用于制造这种光伏电池的方法和组合物。 具有n型硅层的硅衬底设置有氮化硅层，与所述氮化硅层接触的反应性金属和与反应性金属接触的非反应性金属。 该组件被烧制以在硅衬底上形成由金属氮化物和任选的金属硅化物组成的低肖特基势垒高度接触，以及与所述低肖特基势垒高度接触件接触的导电金属电极。 活性金属可以是钛，锆，铪，钒，铌和钽及其组合，非反应性金属可以是银，锡，铋，铅，锑，砷，铟，锌，锗，镍， 磷，金，镉，铍及其组合。

公开(公告)号：US08183108B2

公开(公告)日：2012-05-22

申请号：US12301791

申请日：2006-06-15

申请人： William J. Borland ,  Seigi Suh ,  Jon-Paul Maria ,  Jon Fredrick Ihlefeld ,  Ian Burn

发明人： William J. Borland ,  Seigi Suh ,  Jon-Paul Maria ,  Jon Fredrick Ihlefeld ,  Ian Burn

IPC分类号： H01L21/20 ,  H01B3/20 ,  H01B3/00

CPC分类号： H01L21/31691 ,  C23C18/1212 ,  C23C18/1241 ,  C23C18/1266 ,  C23C18/1283 ,  C23C18/1295 ,  H01G4/129 ,  H05K1/162 ,  H05K2201/017 ,  H05K2201/0355

摘要： A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.

摘要翻译： 一种通过在高介电常数组合物中添加无机玻璃助熔材料，通过化学溶液沉积制造致密电介质层的方法，将所得混合物沉积在基材上，并在无机玻璃熔剂的软化点和熔点之间的温度 底物。 一种制造包括致密介电层的电容器的方法。

公开(公告)号：US20080044672A1

公开(公告)日：2008-02-21

申请号：US11923594

申请日：2007-10-24

申请人： William Borland ,  Ian Burn ,  Jon Ihlefeld ,  Jon-Paul Maria ,  Seigi Suh

发明人： William Borland ,  Ian Burn ,  Jon Ihlefeld ,  Jon-Paul Maria ,  Seigi Suh

IPC分类号： B32B15/01

CPC分类号： H01L21/02197 ,  C01G23/006 ,  C01P2004/82 ,  C01P2006/40 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02337 ,  H01L21/31691 ,  H05K1/162 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0355 ,  Y10T29/417 ,  Y10T29/435 ,  Y10T29/4913 ,  Y10T428/31678

摘要： The present invention is directed to an article comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0.002 and 0.05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.

摘要翻译： 本发明涉及一种制品，其包括由任意的溶液组合物形成的介电层，所述溶液组合物可在焙烧期间形成钛酸钡并且含有0.002至0.05原子％的溶液组合物中的锰，其中介电层已形成于金属 在还原气氛中进行烫伤。