知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

22 条记录 (耗时 0.026 秒)

    Multifunctional nanoscopy for imaging cells
    5.
    发明授权
    Multifunctional nanoscopy for imaging cells 有权
    用于成像细胞的多功能纳米镜

    公开(公告)号：US09453809B2

    公开(公告)日：2016-09-27

    申请号：US14162205

    申请日：2014-01-23

    申请人： Washington University

    发明人： Stuart A. Solin ,  Kirk D. Wallace ,  Samuel A. Wickline ,  Michael S. Hughes

    IPC分类号： G01N27/04 ,  G01N15/10 ,  G01R33/09 ,  G01R33/12 ,  G11C11/18 ,  G01R27/02 ,  G11C11/16 ,  G01N15/00

    CPC分类号： G01N27/04 ,  G01N15/1031 ,  G01N2015/0038 ,  G01R27/02 ,  G01R33/09 ,  G01R33/095 ,  G01R33/1269 ,  G11C11/161 ,  G11C11/18 ,  G11C13/0019

    摘要： Disclosed herein is an apparatus comprising a metal shunt and a semiconductor material in electrical contact with the metal shunt, thereby defining a semiconductor/metal interface for passing a flow of current between the semiconductor material and the metal shunt in response to an application of an electrical bias to the apparatus, wherein the semiconductor material and the metal shunt lie in different planes that are substantially parallel planes, the semiconductor/metal interface thereby being parallel to planes in which the semiconductor material and the metal shunt lie, and wherein, when under the electrical bias, the semiconductor/metal interface is configured to exhibit a change in resistance thereof in response to a perturbation. Such an apparatus can be used as a sensor and deployed as an array of sensors.

    摘要翻译： 本文公开了一种装置，其包括金属分流器和与金属分流器电接触的半导体材料，从而限定半导体/金属界面，用于响应于施加电气而使半导体材料和金属分路之间的电流流过 所述半导体材料和所述金属分流器位于基本上平行的平面的不同平面中，所述半导体/金属界面因此平行于半导体材料和金属分路所在的平面，并且其中，当在 电偏压，半导体/金属界面被配置为响应于扰动而呈现其电阻的变化。 这种装置可以用作传感器并且被部署为传感器阵列。

    Method and Apparatus for High Resolution Photon Detection based on Extraordinary Optoconductance (EOC) Effects
    6.
    发明申请
    Method and Apparatus for High Resolution Photon Detection based on Extraordinary Optoconductance (EOC) Effects 审中-公开
    基于特殊光电导（EOC）影响的高分辨率光子检测方法与装置

    公开(公告)号：US20150357503A1

    公开(公告)日：2015-12-10

    申请号：US14828098

    申请日：2015-08-17

    申请人： Washington University

    发明人： Stuart A. Solin ,  Samuel A. Wickline ,  AKM Shah Newaz ,  Kirk D. Wallace

    IPC分类号： H01L31/108 ,  H01L27/144 ,  H01L31/0304

    CPC分类号： H01L27/14665 ,  B82Y15/00 ,  H01L27/1446 ,  H01L31/0304 ,  H01L31/09 ,  H01L31/108 ,  Y02E10/544

    摘要： The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×1011 cm√Hz/W for 632 nm illumination and a high dynamic response of 40 dB making such sensors technologically competitive for a wide range of practical applications.

    摘要翻译： 本发明人公开了一种新的高性能光学传感器，优选纳米级尺寸，其在室温下基于金属 - 半导体混合物（MSH）中的非常光导（EOC）现象，优选反EOC（I-EOC）现象起作用 ）结构具有半导体/金属界面。 这样的设计显示出没有露出半导体的高效光子传感器。 在使用示例性实施例的实验中，使用氦 - 氖激光辐射的超高空间分辨率4点光电导测量显示了对于250nm器件的显着大的光导特性，观察到的最大测量值为9460％EOC。 这种示例性的EOC装置还显示出对于632nm照明高于5.06×1011cm / Hz / W的特定检测率和40dB的高动态响应，使得这种传感器在广泛的实际应用中技术上是有竞争力的。