公开(公告)号：US20240260481A1

公开(公告)日：2024-08-01

申请号：US18592553

申请日：2024-03-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Lin Wang ,  Chen-Yi Weng ,  Yi-Wei Tseng ,  Chin-Yang Hsieh ,  Jing-Yin Jhang ,  Yi-Hui Lee ,  Ying-Cheng Liu ,  Yi-An Shih ,  I-Ming Tseng ,  Tu-Ping Wang

IPC: H10N50/80 ,  G11C5/06 ,  G11C11/16 ,  H01L29/82 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10

CPC classification number: H10N50/80 ,  G11C5/06 ,  G11C11/16 ,  G11C11/161 ,  H01L29/82 ,  H10N50/01 ,  H10N50/10 ,  G11C2211/5615 ,  H10B61/00

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.